3-4. Step Bunching
Step bunching is visible as a pattern of parallel lines running perpendicular to the major at. If present, estimate the % of speci ed area affected.
2018-06-28meta-author
2-29.Resistivity
The resistance to current flow and movement of electron and hole carries in the silicon carbide. Resistivity is related to the ratio of voltage across the silicon to the current flowing through the silicon carbide per unit volume of silicon carbide. The units for [...]
2018-06-28meta-author
5-4-3 Growth of Hexagonal Polytype SiC Wafers
In the late 1970s, Tairov and Tzvetkov established the basic principles of a modified seeded sublimation growth process for growth of 6H-SiC. This process, also referred to as the modified Lely process,was a breakthrough for SiC in that [...]
2018-06-28meta-author
2-7.Primary Flat Orientation
The at of the longest length on the wafer, oriented such that the chord is parallel with a specied low index crystal plane. Measured on one wafer per ingot using Laue back-reection technique with manual angle measurement.
2018-06-28meta-author
2-33.P type
A semiconductor has electrical conductivity between that of a conductor and an insulator. Semiconductors differ from metals in their characteristic property of decreasing electrical resistivity with increasing temperature.Semiconductors can also display properties of passing current more easily in one direction than the other, [...]
2018-06-28meta-author
3-11. Particles
Particles have the appearance of eyes and if present are usually concentrated at the wafer edges and not within the speci ed area. If present, count once per occurrence.Two particles within 200 microns count as one.
2018-06-28meta-author