3-12. Silicon Droplets
Silicon droplets can appear as either small mounds or depressions in the wafer surface. Normally absent, but if present are largely concentrated at perimeter of wafer. If present, estimate the % of speci ed area affected.
1-1.lattice parameter The lattice constant, or lattice parameter, refers to the constant distance between unit cells in a crystal lattice. Lattices in three dimensions generally have three lattice constants, referred to as a, b, and c. However, in the special case of cubic crystal structures, [...]
5-6-4-2 SiC High-Power Switching Transistors Three terminal power switches that use small drive signals to control large voltages and currents (i.e., power transistors) are also critical building blocks of high-power conversion circuits. However, as of this writing, SiC high-power switching transistors are not yet commercially [...]
5-5-4 Patterned Etching of SiC for Device Fabrication At room temperature, there are no known conventional wet chemicals that etch single-crystal SiC. Most patterned etching of SiC for electronic devices and circuits is accomplished using dry etching techniques. The reader should consult References 122–124 which contain summaries [...]
2-8.Secondary Flat Orientation A at of shorter length than the primary orientation at,whose position with respect to the primary orientation at identies the face of the wafer.
2-10.Cracks A fracture or cleavage of the wafer that extends from the frontside surface of the wafer to the back-side surface of the wafer. Cracks must exceed 0.010” in length under high intensity illumination in order to discriminate fracture lines from allowable crystalline striations. Fracture [...]
5-1 Introduction Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide’s ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety [...]
