3-4. Step Bunching
Step bunching is visible as a pattern of parallel lines running perpendicular to the major at. If present, estimate the % of speci ed area affected.
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3-4. Step Bunching
Step bunching is visible as a pattern of parallel lines running perpendicular to the major at. If present, estimate the % of speci ed area affected.
5-5-1 Choice of Polytype for Devices As discussed in Section 4, 4H- and 6H-SiC are the far superior forms of semiconductor device quality SiC commercially available in mass-produced wafer form. Therefore, only 4H- and 6H-SiC device processing methods will be explicitly considered in the rest [...]
2-18.Grain boundaries They are interfaces where crystals of different orientations meet. A grain boundary is a single-phase interface, with crystals on each side of the boundary being identical except in orientation. The term “crystallite boundary” is sometimes, though rarely, used. Grain boundary areas contain those [...]
5-2-1-1 SiC Crystallography Silicon carbide occurs in many different crystal structures, called polytypes. Despite the fact that all SiC polytypes chemically consist of 50% carbon atoms covalently bonded with 50% silicon atoms, each SiC polytype has its own distinct set of electrical semiconductor properties. While [...]
2-24.Wafer Orientation Wafers are grown from crystal having a regular crystal structure, with silicon having a diamond cubic structure with a lattice spacing of 5.430710 Å (0.5430710 nm).When cut into wafers, the surface is aligned in one of several relative directions known as crystal orientations. [...]
3-2. Scratches Grooves or cuts below the surface plane of the wafer having a length-to-width ratio of greater than 5 to 1. Scratches are speci ed by the number of discrete scratches times the total length in fractional diameter.
3-3. Dimpling A texture resembling the surface of a golf ball. Speci ed in % affected area.