5-4-5 SiC Crystal Dislocation Defects
Table 5.2 summarizes the major known dislocation defects found in present-day commercial 4H- and 6H-SiC wafers and epilayers . Since the active regions of devices reside in epilayers, the epilayer defect content is clearly of primary importance to SiC device [...]
2018-06-28meta-author
2-5.Misorientation
In wafers cut intentionally “off orientation”, the angle between the projection of the normal vector to the wafers
surface onto a {0001} plane and the projection on that plane of the nearest <11-20> direction.
2018-06-28meta-author
5-4-4-2 SiC Epitaxial Growth Polytype Control
Homoepitaxial growth, whereby the polytype of the SiC epilayer matches the polytype of the SiC substrate, is accomplished by “step-controlled” epitaxy . Step-controlled epitaxy is based upon growing epilayers on an SiC wafer polished at an angle (called the [...]
2018-06-28meta-author
3-11. Particles
Particles have the appearance of eyes and if present are usually concentrated at the wafer edges and not within the speci ed area. If present, count once per occurrence.Two particles within 200 microns count as one.
2018-06-28meta-author
5-5-4 Patterned Etching of SiC for Device Fabrication
At room temperature, there are no known conventional wet chemicals that etch single-crystal SiC. Most
patterned etching of SiC for electronic devices and circuits is accomplished using dry etching techniques.
The reader should consult References 122–124 which contain summaries [...]
2018-06-28meta-author
SILICON CARBIDE (SiC) materials are currently metamorphosing from research and development into a market driven manufacturing product. SiC substrates are currently used as the base for a large fraction of the world production of green, blue, and ultraviolet light-emitting diodes (LEDs). Emerging markets for [...]
2018-06-28meta-author