PAM XIAMEN offers 3″ Si wafer Thickness: 380±20μm.
3″ Si wafer with Thermal Oxide of thickness 1000A
Type/dopant: N type/Phosphorus
Primary Flat 22.5±2.5mm, （110）±1°
Surface roughness: <5A
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.