**PAM XIAMEN offers 3″ Silicon Wafer.**

Material | Orient. | Diam. | Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |

p-type Si:B | [100] | 3″ | 250 | P/E | 0.15-0.20 | SEMI Prime |

p-type Si:B | [100] | 3″ | 350 | P/E/P | 0.100-0.200 | SEMI Prime |

p-type Si:B | [100] | 3″ | 400 | P/P | 0.015-0.016 | SEMI Prime |

p-type Si:B | [100] | 3″ | 380 | P/P | 0.01-0.02 | SEMI Prime |

p-type Si:B | [100] | 3″ | 380 | P/E | 0.003-0.004 | SEMI Prime |

p-type Si:B | [100] | 3″ | 100 | P/P | 0.0026-0.0030 | SEMI Prime |

p-type Si:B | [100] | 3″ | 300 | P/E | 0.002-0.003 | SEMI Prime |

p-type Si:B | [100] | 3″ | 525 | P/E | 0.0020-0.0027 | SF @ 45° |

p-type Si:B | [100] | 3″ | 380 | P/E | 0.001-0.005 | SEMI Prime |

p-type Si:B | [911] | 3″ | 380 | P/E | 5-6 | PF <110> |

p-type Si:B | [111] | 3″ | 380 | P/E | 18-21 | SEMI Prime |

p-type Si:B | [111] | 3″ | 775 | P/E | 13-14 | Prime, NO Flatst |

p-type Si:B | [111] | 3″ | 1000 | P/E | 10-20 | Prime, NO Flatst |

p-type Si:B | [111-4°] | 3″ | 380 | P/E | 8-12 | SEMI Prime |

p-type Si:B | [111] | 3″ | 2000 | P/P | 8-9 | SEMI Prime, Individual cst |

p-type Si:B | [111] | 3″ | 625 | P/P | 5-8 | SEMI Prime |

p-type Si:B | [111] | 3″ | 2300 | P/P | 4-7 | SEMI Prime, Individual cst |

p-type Si:B | [111] | 3″ | 500 | P/E | 2-6 | SEMI Prime |

p-type Si:B | [111] | 3″ | 500 | P/E | 2-8 | SEMI Prime |

p-type Si:B | [111] | 3″ | 300 | P/E | 1.4-1.8 | Prime, NO Flatst |

p-type Si:B | [111] | 3″ | 800 | P/E | 1-20 | SEMI Prime |

For more information, please visit our website: https://www.powerwaywafer.com,

send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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