3″ Silicon Wafer-11

PAM XIAMEN offers 3″ Silicon Wafer.

Material Orient. Diam. Thck
(μm)		 Surf. Resistivity
Ωcm		 Comment
p-type Si:B [111] 3″ 300 P/P 0.3-0.4 SEMI Prime
p-type Si:B [111] 3″ 250 P/E 0.10-0.12 SEMI Prime
p-type Si:B [111] 3″ 300 P/E 0.03-0.04 SEMI Prime
p-type Si:B [111] 3″ 380 P/E 0.014-0.015 SEMI Prime
p-type Si:B [111-1°] 3″ 1000 P/E 0.014-0.016 SEMI Prime
p-type Si:B [111] 3″ 600 P/P 0.005-0.020 SEMI Prime
p-type Si:B [111-3.5°] 3″ 380 P/E 0.004-0.005 SEMI Prime
n-type Si:P [510] 3″ 1000 P/E/P 5-10 Prime, NO Flatst
n-type Si:P [100] 3″ 9500 P/E 15-22 SEMI Prime, Individual cst
n-type Si:P [100] 3″ 300 P/E 10-20 SEMI Prime
n-type Si:P [100] 3″ 380 P/E 10-20 SEMI Prime
n-type Si:P [100] 3″ 3000 P/E/P 10-12 Prime, NO Flats, Individual cst
n-type Si:P [100] 3″ 1000 P/E 6-10 Prime, NO Flatst
n-type Si:P [100] 3″ 1500 P/E 5-7 SEMI Prime
n-type Si:P [100] 3″ 300 P/P 1-20 SEMI Prime
n-type Si:P [100] 3″ 345 P/P 1-100 SEMI
n-type Si:P [100] 3″ 350 P/P 1-25 SEMI Prime, TTV<1μm, Empak cst
n-type Si:P [100] 3″ 380 P/E 1-20 SEMI Prime
n-type Si:P [100-7°] ±0.5° 3″ 425 P/E ~1 SEMI Prime
n-type Si:P [100] 3″ 600 P/E 1-10 SEMI Prime
n-type Si:P [100] 3″ 1000 P/E 1-100 Prime, NO Flatst

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

2019-03-06

Share this post

Related Posts

Role of Si in the Surface Damage Mechanism of RB-SiC/Si Under Mechanical Loading

We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title:Role of Si in the Surface Damage Mechanism of RB-SiC/Si Under Mechanical Loading Published by: Quanli Zhang ; Zhen Zhang ; Honghua [...]

2019-12-02meta-author
Lithium Chip

PAM XIAMEN offers Lithium Chip. Lithium Chip 16 mm Dia x 0.6 mm Thickness for Li-ion Battery R&D Lithium chip is widely used for Li-ion and Li metal rechargeable battery R&D. SPECIFICATIONS: Purity 99.9% Lithium Melting Point 180.5 °C Density 0.534 g/cm3 Color Silver Dimension 16 mm x 0.6 mm (diameter x [...]

2019-05-07meta-author
A critical review of growth of low-dimensional carbon nanostructures on SiC (0 0 0 1): impact of growth environment

Graphene and carbon nanotube (CNT) structures have promise for many electronic device applications and both have been grown on SiC through the decomposition of the substrate. It is well known that both graphene and aligned CNTs are grown under similar conditions with overlapping temperature [...]

2019-12-16meta-author
PECVD Nitride

PECVD Nitride PAM XIAMEN offers PECVD Nitride PECVD nitride is an alternative to LPCVD nitride when lower temperature ranges are required. Micro-mechanicalWidely used in Micro-Electro-Mechanical Systems (MEMS) and semiconductor processing, PECVD nitride is a tensile stress film that can be used as a passivation layer or [...]

2019-02-12meta-author
Porous Silicon Wafer

Porous Silicon Wafer PAM XIAMEN offers Porous Silicon Wafer. The novel uses of porous silicon include powering sattelites and perhaps even space ships!       In the early 2000s scientists discoverd that hydrogenated porous silicon reacts explosively with oxygen at very low (cryogenic) temperatures. A porous silicon wafer in [...]

2019-02-15meta-author
CeO2 Epi-thin film on YSZ Alloy

PAM XIAMEN offers CeO2 Epi-thin film on YSZ Alloy. CeO2 Film (40 nm one side) on YSZ <100> 10x10x0.5 mm CeO2 Film (40 nm one side) on YSZ <110> 10x10x0.5 mm. CeO2 Film (40 nm one side) on YSZ, <111>10x10x0.5 mm, 1sp For more [...]

2019-04-26meta-author