3″ Silicon Wafer-12

PAM XIAMEN offers 3″ Silicon Wafer.

Material Orient. Diam. Thck
(μm)
Surf. Resistivity
Ωcm
Comment
n-type Si:P [100] 3″ 1800 P/P 1-5 SEMI Prime, Individual cst
n-type Si:P [100] 3″ 5000 P/E 1-30 Prime, NO Flats, Individual cst
n-type Si:Sb [100] 3″ 800 P/E 0.022-0.028 SEMI Prime
n-type Si:Sb [100] 3″ 380 P/E 0.021-0.023 SEMI Prime
n-type Si:Sb [100] 3″ 500 P/E 0.021-0.022 SEMI Prime
n-type Si:As [100] 3″ 1000 P/E 0.001-0.005 SEMI Prime
n-type Si:P [211] 3″ 450 P/P 50-65 SEMI Prime
n-type Si:P [111-4°] 3″ 250 P/E 50-220 Prime, NO Flatst
n-type Si:P [111] 3″ 10000 P/E 20-60 SEMI Prime, Individual cst
n-type Si:P [111-3°] 3″ 380 P/E 19-25 SEMI Prime
n-type Si:P [111-0.5° towards[110]] ±0.25° 3″ 1400 P/E >5 SEMI Prime, hard cst, LaserMark
n-type Si:P [111] 3″ 6000 P/E 5-10 SEMI Prime, Individual cst
n-type Si:P [111] 3″ 525 P/E 4.5-5.0 SEMI Prime
n-type Si:P [111] 3″ 500 P/P 4-6 Prime, NO Flatst
n-type Si:P [111] 3″ 250 P/E 1.0-5.5 SEMI Prime
n-type Si:P [111] 3″ 350 P/E 1-10 SEMI Prime
n-type Si:P [111] 3″ 6000 P/E 1-20 SEMI Prime, Individual cst
n-type Si:P [111] 3″ 1000 P/P 0.5-2.0 SEMI Prime
n-type Si:Sb [111] 3″ 300 P/E 0.019-0.026 SEMI Prime
n-type Si:Sb [111-3°] 3″ 380 P/E 0.015-0.020 SEMI Prime
n-type Si:Sb [111-4°] 3″ 380 P/E 0.015-0.017 SEMI Prime

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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