PAM XIAMEN offers 3″ Silicon Wafer.
| Material | Orient. | Diam. | Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |
| n-type Si:P | [111] ±0.5° | 3″ | 415 ±15 | E/E | FZ 2,000-5,000 | SEMI Prime, Lifetime>1,500μs |
| n-type Si:P | [111] ±1° | 3″ | 508 | E/E | FZ 182-196 | SEMI Test, TTV<3μm |
| Intrinsic Si:- | [100] | 3″ | 300 | P/P | FZ >20,000 | SEMI Prime |
| Intrinsic Si:- | [100] | 3″ | 300 | P/P | FZ >20,000 | SEMI Prime |
| Intrinsic Si:- | [100] | 3″ | 380 | P/E | FZ >20,000 | SEMI Prime |
| Intrinsic Si:- | [100] | 3″ | 380 | P/E | FZ >20,000 | SEMI Test, unpolished side has stain |
| Intrinsic Si:- | [100] | 3″ | 380 | P/E | FZ >20,000 | SEMI Prime |
| Intrinsic Si:- | [100] | 3″ | 500 | P/P | FZ >20,000 | SEMI Prime |
| Intrinsic Si:- | [100] | 3″ | 500 | P/P | FZ >20,000 | SEMI Prime, Front Side Prime, back side Test |
| Intrinsic Si:- | [100] | 3″ | 650 | P/P | FZ >10,000 | SEMI Prime, with LM, TTV<2μm |
| Intrinsic Si:- | [100] | 3″ | 700 | P/P | FZ >10,000 | Test, scratrches and stains. Can be repolished for additional fee, TTV<5μm |
| Intrinsic Si:- | [100] | 3″ | 4000 | P/P | FZ >8,000 | Test, Scratched, Individual cst |
| Intrinsic Si:- | [111] ±0.5° | 3″ | 380 | P/P | FZ >20,000 | SEMI Prime, Lifetime>1,460μs |
| Intrinsic Si:- | [111] ±0.5° | 3″ | 380 | P/P | FZ >20,000 | SEMI Prime, Lifetime>1,460μs, also includes 2 extra scratched wafers at no charge (10 total in cassette) |
| Intrinsic Si:- | [111] ±0.5° | 3″ | 380 | P/E | FZ >20,000 | SEMI Prime |
| p-type Si:B | [110] ±0.5° | 3″ | 380 | P/E | >100 | SEMI Prime, Primary Flat @ [111], Secondary @ [111] 70.5° from Primary, in hard cassettes of 1, 2 & 2 wafers |
| p-type Si:B | [110] | 3″ | 750 | P/E | >100 | SEMI Prime, 2 Flats at [111], Secondary 70.5° from PFt |
| p-type Si:B | [110] ±0.5° | 3″ | 380 | P/E | >60 | SEMI Prime, Primary Flat @ [111], Secondary @ [111] 70.5° from Primaryt |
| p-type Si:B | [110] ±0.5° | 3″ | 860 | E/E | 15-50 | SEMI |
| p-type Si:B | [110] ±0.25° | 3″ | 380 | P/E | 2-4 | SEMI Prime @[111] 109.5° apartt |
| p-type Si:B | [110] ±0.5° | 3″ | 360 | P/P | 1-10 | SEMI Prime, TTV<1μm, 1-2 weeks ARO o repolish |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.