3″ Silicon Wafer-3

PAM XIAMEN offers 3″ Silicon Wafer.

Diameter Type Dopant Growth
method
Orientation Resistivity  Thickness Surface Grade
76.2 P Boron CZ -100 .001-.005 350-400 P/E PRIME
76.2 P Boron CZ -100 .005-.02 350-400 P/E PRIME
76.2 P Boron FZ -100 >3000 350-400 P/E PRIME
76.2 P Boron CZ -100 1-20 350-400 P/E PRIME
76.2 P Boron CZ -100 1-20 350-400 P/E/DTOx PRIME
76.2 P Boron CZ -100 1-20 350-400 P/E/Ni PRIME
76.2 P Boron CZ -100 1-20 350-400 P/E/WTOx
76.2 P Boron CZ -100 1-20 450-500 P/P PRIME
76.2 P Boron CZ -100 1-20 500-550 P/E PRIME
76.2 P Boron CZ -100 1-10 825-875 P/P PRIME
76.2 P Boron CZ -100 1-20 850-1000 P/P PRIME
76.2 P Boron CZ -100 1-20 1000-1050 P/E PRIME
76.2 P Boron CZ -111 1-20 300-350 P/P PRIME
76.2 P Boron CZ -111 1-20 350-400 P/E PRIME
76.2 P Boron CZ -110 >100 275-325 P/P PRIME
76.2 P Boron CZ -110 1-20 350-400 P/E PRIME
76.2 P Boron CZ -110 100-200 800-850 P/P PRIME
76.2 Any Any CZ Any Any 250-500 P/E TEST
76.2 Any Any CZ -100 1-100 330-430 P/E PRIME
76.2 Intrinsic Undoped FZ -100 > 15000 350-400 P/E PRIME
76.2 Intrinsic Undoped FZ -111 > 15000 350-400 P/E PRIME

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system.Test report is provided for each shipment, and each wafer are warranty.

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