3″ Silicon Wafer-4

3″ Silicon Wafer-4

PAM XIAMEN offers 3″ Silicon Wafer.

Diameter Type Dopant Growth
method		 Orientation Resistivity  Thickness Surface Grade
76.2 SI. Undoped VGF -100 >1E7 600-650 P/E PRIME
76.2 SI. Undoped VGF -100 >1E7 610-660 P/P EPI
76.2 N Si VGF -100   600-650 P/E PRIME
76.2 P Zn VGF -100   600-650 P/E PRIME
76.2   Undoped CZ -100 >30 300-350 P/P EPI
76.2   Undoped CZ -100 >30 350-400 P/E EPI
76.2 N Sb CZ (100)-6 .01-.04 100-200 P/E TEST
76.2 N Sb CZ -100 .005-.02 300-350 P/P EPI
76.2 N Sb CZ -100 .005-.02 350-400 P/E EPI
76.2 P Ga CZ -100 .01-.04 300-350 P/P EPI
76.2 P Ga CZ -100 .01-.04 350-400 P/E EPI
76.2 N Si VGF -100   600-650 P/E PRIME
76.2 P Zn VGF -100   600-650 P/E PRIME
76.2 Si Fe VGF -100 5000000 600-650 P/E PRIME
76.2   Single Wafer Shipper ePak Lid/Base/Spring   Holds1Wafer   Clean Room
76.2   Shipping Cassette ePak     Holds25Wafers   Clean Room

 

In addition, we can offer substrate used as Alpha Spectrometer Consumables:

Silicon substrate (PAM210610 – SI）

Main technical characteristics:
Material: silicon (can be replaced with quartz).
Diameter – (74.0 ± 0.5) mm.
Thickness – (0.5 ± 0.05) mm.
Grinding – double-sided.
Polishing – one-sided (surface finish class 14):
– arithmetic mean deviation of the profile (Ra) – no more than 0.010 microns.
– the height of the profile irregularities at ten points (Rz) – no more than 0.050 microns.
– baseline (l) – 0.08 mm.

The substrates must be a whole product without chips, cracks, scratches, deformations and retain these properties during operation under conditions of heating under an IR (mirror) lamp up to 200C and calcining in a muffle furnace at (800-1000) 0C for 1 hour.

The substrates are structurally disks (silicon or quartz), ground on both sides and polished on one side to a surface finish class of 14.
Can be used with a heating device – stainless steel ring.

Application area:

Alpha Spectrometer Consumables: Pads are designed to make an “artificial” source used for alpha spectrometric analysis.

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

2019-03-04

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