3″ Silicon Wafer-4

PAM XIAMEN offers 3″ Silicon Wafer.

Diameter Type Dopant Growth
method
Orientation Resistivity  Thickness Surface Grade
76.2 SI. Undoped VGF -100 >1E7 600-650 P/E PRIME
76.2 SI. Undoped VGF -100 >1E7 610-660 P/P EPI
76.2 N Si VGF -100 600-650 P/E PRIME
76.2 P Zn VGF -100 600-650 P/E PRIME
76.2 Undoped CZ -100 >30 300-350 P/P EPI
76.2 Undoped CZ -100 >30 350-400 P/E EPI
76.2 N Sb CZ (100)-6 .01-.04 100-200 P/E TEST
76.2 N Sb CZ -100 .005-.02 300-350 P/P EPI
76.2 N Sb CZ -100 .005-.02 350-400 P/E EPI
76.2 P Ga CZ -100 .01-.04 300-350 P/P EPI
76.2 P Ga CZ -100 .01-.04 350-400 P/E EPI
76.2 N Si VGF -100 600-650 P/E PRIME
76.2 P Zn VGF -100 600-650 P/E PRIME
76.2 Si Fe VGF -100 5000000 600-650 P/E PRIME
76.2 Single Wafer Shipper ePak Lid/Base/Spring Holds1Wafer Clean Room
76.2 Shipping Cassette ePak Holds25Wafers Clean Room

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

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