3″ Silicon Wafer-6

PAM XIAMEN offers 3″ Silicon Wafer.

Material Orient. Diam. Thck
(μm)
Surf. Resistivity
Ωcm
Comment
p-type Si:B [5,5,12] ±0.5° 3″ 380 P/E 1-10 SEMI Prime
p-type Si:B [211] ±0.5° 3″ 525 P/P >10 SEMI Prime
p-type Si:B [211] ±0.5° 3″ 525 P/E >10 SEMI Prime
p-type Si:B [111-28° towards[001]] ±0.5° 3″ 400 P/E >20 SEMI TEST (Half of wafers polished on wrong side, some have etch patterns), Primary Flat @ <112>, hard cst
p-type Si:B [111-4°] ±0.5° 3″ 380 P/E 8-12 SEMI Prime
p-type Si:B [111-4°] ±0.5° 3″ 380 P/E 8-12 SEMI Prime
p-type Si:B [111] ±0.5° 3″ 508 E/E 0.792-1.008 SEMI TES, TTV<2μm, Epak cst
p-type Si:B [111-4°] ±0.5° 3″ 381 P/EOx 0.01-0.02 {0.0145-0.0148} SEMI Prime
p-type Si:B [111-4.0° towards[112]] ±0.5° 3″ 406 P/E 0.005-0.015 SEMI Prime
p-type Si:B [111] 3″ 250 P/E 0.001-0.002 SEMI Prime
p-type Si:B [111-4° towards[-211]] ±0.5° 3″ 890 P/E 0.001-0.005 Test, Soft cst, Can be repolished for additional fee
n-type Si:P [510] ±0.5° 3″ 1000 P/E 5-10 Prime, NO Flatst
n-type Si:P [110] ±0.5° 3″ 381 P/E 11-15 SEMI Prime, Individual cst, TTV<15μm
n-type Si:P [110] ±0.5° 3″ 381 P/E 1-10 SEMI Prime, SEMI Flat (one) @ [1,-1,0], in Empak cassettes of 7 wafers
n-type Si:As [110] ±0.5° 3″ 420 P/P 0.001-0.007 SEMI Prime, Primary Flat @ [1,-1,0]
n-type Si:P [100] ±1° 3″ 2,286 ±13 P/P 15-28 SEMI Prime, TTV<1μm, Sealed in individual csts, in groups of 5 wafers
n-type Si:P [100] 3″ 300 P/P 10-30 SEMI Prime, in Empak cassettes of 6 & 7 wafers
n-type Si:P [100] 3″ 300 P/P 10-30 SEMI Prime, TTV<6μm
n-type Si:P [100] 3″ 300 P/P 10-30 SEMI Prime, TTV<6μm (cassettes of 11, 18, 22 and 24 wafers)
n-type Si:P [100] ±1° 3″ 300 ±10 P/P 5-15 SEMI Prime, TTV<1μm, Empak cst
n-type Si:P [100] 3″ 381 P/E 5-10 SEMI Prime, TTV<5μm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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