3″ Silicon Wafer-9

PAM XIAMEN offers 3″ Silicon Wafer.

Material	Orient.	Diam.	Thck (μm)	Surf.	Resistivity Ωcm	Comment
Si		3″		P/P		SEMI TEST (Unsealed)t
Si		3″		P/P		SEMI TEST (Unsealed)t
n-type Si:P	[100] ±0.1°	3″	380	P/E	FZ >5,000	SEMI Test, Bad Lasermark on back. To use with chuck light polish needed on back
n-type Si:P	[100]	3″	381	P/P	FZ 100-500	SEMI Prime
n-type Si:P	[111]	3″	300	P/E	FZ 61-95	Prime, NO Flatst
Intrinsic Si:-	[100]	3″	300	P/P	FZ >20,000	Prime, NO Flats, Individual cst
Intrinsic Si:-	[111] ±0.5°	3″	1975	P/P	FZ >20,000	Prime, NO Flats, Individual cst
p-type Si:B	[110]	3″	380	P/E	1-10	1 F @ <1,-1,0>
p-type Si:B	[100]	3″	380	P/P	80-170	SEMI Prime
p-type Si:B	[100]	3″	300	P/P	30-35	SEMI Prime
p-type Si:B	[100]	3″	200	P/E	10-20	SEMI Prime
p-type Si:B	[100]	3″	300	P/E	5-20	PF <110>
p-type Si:B	[100]	3″	350	P/E	5-20	SEMI Prime
p-type Si:B	[100]	3″	3000	P/P	4-6	Prime, NO Flats, Individual cst
p-type Si:B	[100]	3″	300	P/P	1-10	SEMI Prime
p-type Si:B	[100]	3″	350	P/P	1-10	SEMI Prime
p-type Si:B	[100]	3″	380	P/E	1-20	SEMI Prime
p-type Si:B	[100]	3″	380	P/E	1-20	SEMI Prime
p-type Si:B	[100]	3″	450	P/P	1-50	Prime, TTV<2μm
p-type Si:B	[100]	3″	580	P/P	1-100	SEMI Prime, TTV<1μm, Lasermarkt
p-type Si:B	[100]	3″	950	P/E	1-20	SEMI Prime

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

2019-03-06

Related Posts

Charge Sensitive Pre-amplifier

PAM-01A is a single channel preamplifier. It can be used as a key part for semiconductor detector, including CZT and Si, or others, including scintillator and gas. 1. Charge Sensitive Pre-amplifier Specification Power Consumption <0.43W Power ±12V Output Resistance 50 Ω Equivalent Noise ENC: 130e– Working temperature -20℃-+40℃ Falling edge time 250 ~ 400us Input charge range <1000fc Gain G=10mv/fc Dimension 100×76×44mm3 Weight 265g 2. Charge [...]

2019-04-25meta-author

Photoemission study of LT-GaAs

Photoemission study of LT-GaAs The electronic structure of GaAs (1 0 0) grown by low-temperature molecular beam epitaxy was investigated by means of photoemission spectroscopy. Slight differences are found in the valence band spectra of GaAs layers grown at different As2/Ga flux ratios. Analysis of As 3d [...]

2014-02-11meta-author LT-GaAs

6″ Prime EPI Wafer

PAM XIAMEN offers 6″ Prime EPI Wafer. 6″ EPI Wafer diameter: 6″ (150 +-0,5 mm) orientation: <100> primary flat length: 57.5mm+/-2.5mm primary flat: <110> +/- 1 no secondary flat overall thickness 280-325μm TTV <10um WARP/BOW <50um TIR <3um EPI layer: -type: n -dopant: P [...]

2019-07-03meta-author

6″ FZ Silicon Wafer-5

PAM XIAMEN offers6″ FZ Silicon Wafer-5 Silicon wafers, per SEMI Prime, P/E 6″Ø×875±25µm, FZ p-type Si:B[111]±0.5°, Ro > 10,000 Ohmcm, Warp<60μm, One-side-polished, Particles: ≤10@≥0.3μm, MCL (Na, Al, K, Fe, Ni, Cu, Zn)<5E10/cm²,back-side etched, Tarnish, orange peel, contamination, haze, micro scratch, chips, edge chips, crack, crow feet, pin hole, pits, dent, waviness, smudge&scar on [...]

2019-09-19meta-author

Polycrystalline Back Sealed Polished Wafer

Below is the regular standard specification of Polycrystalline back sealed polished wafer, please kindly note in this size, normally notch is used, rather than flat. Si Wafer with back seal poly+SiO2 1. Polycrystalline Back Sealed Silicon Wafer Specification Parameter Unit PAM210305-SI　 Grade — Polycrystalline back sealed polished wafer General Characteristics — — Growth Method — CZ Diameter mm 200±0.2 Type — N Crystal Orientation — <100>±0.5 Dopant — AS Electrical Characteristics — — Resistivity Ω•cm 0.002-0.004 RRG [...]

2021-03-25meta-author

Aluminium Gallium Arsenide Epi Wafer

Aluminium gallium arsenide epi wafer (AlGaAs or AlxGa1−xAs) is a semiconductor wafer material with very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula stands a number between 0 and 1 – this indicates an arbitrary alloy [...]

2020-07-17meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

sales@powerwaywafer.com tech@powerwaywafer.com

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.