PAM XIAMEN offers 3″CZ Prime Silicon Wafer
Item3, 50pcs
Silicon wafer:
i. Diameter: 76.2 mm ± 0.5 mm,
ii. Thickness: 375μm ±25μm
iii. Doping: P type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
Grade: Prime
Resistivity: 1 Ohm-cm to 10 Ohm-cm
Surface: single side polished
Flats: SEMI Standard
Surface roughness: ≤ 5Å
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.
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