PAM XIAMEN offers 3″CZ Prime Silicon Wafer
Item3, 50pcs
Silicon wafer:
i. Diameter: 76.2 mm ± 0.5 mm,
ii. Thickness: 375μm ±25μm
iii. Doping: P type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
Grade: Prime
Resistivity: 1 Ohm-cm to 10 Ohm-cm
Surface: single side polished
Flats: SEMI Standard
Surface roughness: ≤ 5Å
For more information, send us email at [email protected] and [email protected]
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PAM XIAMEN offers 2 inch GaN (Gallium Nitride) HEMT Epitaxial Wafers on different substrates such as silicon substrate, sapphire substrate, silicon carbide (SiC) substrate. This GaN epitaxial wafer is for high-electron-mobility transistors (HEMT). We sell directly from the factory, and therefore can offer the best prices on the market for high [...]
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PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 6 SSP Boron P+ 100 57,5 ± 2,5 100 ± 1 0.0 ± 5.0 ° 0.001 – 100 Ohmcm 150 ± 0.5 mm 675 ± 200 µm 100 20 100 6 SSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° > [...]
PAM XIAMEN offers 80+1mm FZ Si Ingot-2 FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 3″ 1800 P/P 1-5 SEMI Prime, Individual cst n-type Si:P [100] 3″ 5000 P/E 1-30 Prime, NO Flats, Individual cst n-type Si:Sb [100] 3″ 800 P/E 0.022-0.028 SEMI Prime n-type Si:Sb [100] 3″ 380 P/E 0.021-0.023 SEMI Prime n-type Si:Sb [100] 3″ 500 P/E 0.021-0.022 SEMI Prime n-type Si:As [100] 3″ 1000 P/E 0.001-0.005 SEMI Prime n-type Si:P [211] 3″ 450 P/P 50-65 SEMI Prime n-type Si:P [111-4°] 3″ 250 P/E 50-220 Prime, NO Flatst n-type Si:P [111] 3″ 10000 P/E 20-60 SEMI Prime, Individual cst n-type Si:P [111-3°] 3″ 380 P/E 19-25 SEMI Prime n-type Si:P [111-0.5° towards[110]] ±0.25° 3″ 1400 P/E >5 SEMI Prime, hard cst, LaserMark n-type Si:P [111] 3″ 6000 P/E 5-10 SEMI Prime, Individual cst n-type Si:P [111] 3″ 525 P/E 4.5-5.0 SEMI Prime n-type Si:P [111] 3″ 500 P/P 4-6 Prime, NO [...]
