3″LiNbO3 single crystal thin film

PAM XIAMEN offers 3″LiNbO3 single crystal thin film

LiNbO3 single crystal thin film (X,Y,Z), X-cut 10μm; Substrate: 3″ Si 0.5 0.4mm;
Structure:Top layer: LiNbO3 single crystal thin film X-cut 10 μm
Substrate: 3″ Si 0.4mm, Resistivity >10,000Ωcm
Surface Roughness<0.5nm
TTV (Thickness Uniformity) <1.2μm, 17 points testing

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

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