The SiC substrate and SiC homoepitaxy from PAM-XIAMEN can be provided for the fabrication of MOSFET devices. Silicon carbide (SiC) MOSFET structure is mainly manufactured by imitating the process of Si MOSFET structure. In terms of configuration, MOSFET structures are generally divided into two [...]
PAM XIAMEN offers Photographic Film.
Various Technical Parameters
Max plotted area
Min Critical Dimension
25μm at 6000 and 12000dpi
12μm at 16000 and 25000dpi
Control ±3μm or ±4μm
Main application areas:
LCD, PCB, VFD, BGA, FPC and other industries
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
Unintentionally doped GaN were grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD). The high-resolution X-ray diffraction (HRXRD) and Lehighton contactless sheet resistance measuring systems were employed to characterize the quality and sheet resistance (Rs) of GaN epilayer. The threading dislocation density [...]
PAM XIAMEN is comparable to the UK IQE to build Asian VCSEL epitaxial core supply chain
Xiamen Powerway focuses on high-end compound semiconductor epitaxial R&D and manufacturing.
In 2018, the 4-inch and 6-inch VCSELs were mass-produced and entered the mainstream chip manufacturers in Taiwan. Utilizing state-of-the-art [...]
When the In composition in the InGaAs material reaches 0.53, and Ga reaches 0.47, InGaAs / InP lattice matched makes it can form a heterojunction. The InGaAs / InP heterojunction structure utilizes the steps of the conduction band and valence band formed by the [...]
PAM-XIAMEN is a reliable supplier of semiconductor materials, offering element semiconductor wafers, wide or narrow bandgap semiconductor wafers to research institutes, universities, and related enterprise. More wafer specifications please see https://www.powerwaywafer.com/products.html.
PAM-XIAMEN has compiled top 20 publications in Condensed Matter Physics & Semiconductors in [...]