PAM XIAMEN offers4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-3
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm,
p or n type (no matter) ,
? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ 10um，warp ≤30um
One side sputtering Cr/Au Layer with the thickness 10nm/50nm
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.
Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.