4″ CZ Prime Silicon Wafer Thickness 525 ± 25 µm-2

PAM XIAMEN offers 4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm.

PRIME WAFERS SILICIUM CZ
DIAMETER 4 inch (100mm+/-0.5mm)
ORIENTATION <1-0-0> +/-1°
THICKNESS : 525µm +/-25µm
SSP
TTV < 10µm – BOW < 40µm
FLAT : 32.5mm
TYPE P
RESISTIVITY : 8 – 12 Ohm.cm – DOPING 10^15
WITH LASER MARK CLASSE 100 : CNRS-LAAS 2019 SIPXXXX
With following numbering XXXX= 0001 to 0600
Lasermark – along the flat on the front side
Cleaning after marking
Clean Room class 100

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

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