PAM XIAMEN offers 4″CZ Prime Silicon Wafer-11
4″ Silicon Wafer
bare wafer
orientation <111>
P-type doped Boron
DSP/SSP
Thickness 500-550μm
Resistivity 0.01-0.02Ωcm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 6″FZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/E 6″ {150.0±0.5mm}Ø×1,000±25µm, FZ p-type Si:B[111]±0.5°, Ro > 5,000 Ohmcm, One-side-polished, Particles: <10@≥0.3µm, back-side etched, One SEMI Flat (57.5mm), Edges: rounded, Sealed in Empak or equivalent cassette, BOW<30µm, MCCLifetime>1000µs. For more information, [...]
Fabrication of ZnO nanorod/p-GaN high-brightness UV LED by microwave-assisted chemical bath deposition with Zn(OH)2–PVA nanocomposites as seed layer Chemical solution deposition is a low-temperature and possibly the lowest-cost method of growing ZnO nanorods on a GaN substrate. However, most reported methods leave an interface layer [...]
PAM XIAMEN offers AlN Single Crystal Substrate& Template. AlN Single crystal AlN Single Crystal Substrate <0001>,10x10x0.45mm, 2SP AlN Single Crystal Substrate <0001>,5x5x0.45mm, 2SP AlN Template on Silicon Undoped AlN Template on Silicon ( Si <111> P type ) 5mmx5mm x 200 nm Undoped AlN Template [...]
PAM XIAMEN offers YVO4 Undoped Yttrium Orthovanadate Crystals. UNDOPED YVO4 IS AN EXCELLENT NEWLY DEVELOPED BIREFRINGENCE OPTICAL CRYSTAL. It has very good transmission in a wide wavelength range from visible to infrared. It has large index of refractivity and birefringence difference. Compared with other important birefringence crystals, YVO4 has higher. [...]
Wide Bandgap Technology –Next Generation Power Devices The tightening of industry standards and changes in government regulations are key drivers of higher energy efficiency. For example, data centers are growing exponentially to meet demand. They use about 3% of the world’s total electricity supply (400 [...]
Bulk GaN cost to fall 60% to $730 for 2″ substrate by 2020 Wide-bandgap semiconductor materials such as gallium nitride (GaN) offer far higher performance than traditional silicon but cost significantly more. However, by 2020 GaN costs will drop enough for it to become competitive [...]
