4″CZ Prime Silicon Wafer-11

PAM XIAMEN offers 4″CZ Prime Silicon Wafer-11

4″ Silicon Wafer
bare wafer
orientation <111>
P-type doped Boron
DSP/SSP
Thickness 500-550μm
Resistivity 0.01-0.02Ωcm

For more information, send us email at [email protected] and [email protected]

2020-04-23

In 2018, China’s semiconductor materials market is 8.5 billion US dollars

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4″ Silicon Wafer-18

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] 4″ 1000 P/E 1-10 SEMI Prime n-type Si:Sb [111-4°] 4″ 450 P/E 0.025-0.045 SEMI Prime n-type Si:Sb [111-2.5°] 4″ 625 P/E 0.021-0.023 SEMI Prime n-type Si:Sb [111] 4″ 525 P/E 0.016-0.020 SEMI Prime n-type Si:Sb [111-4°] 4″ 525 P/E 0.010-0.020 SEMI Prime n-type Si:Sb [111-2°] 4″ 380 P/E 0.008-0.018 SEMI Prime n-type Si:Sb [111-3°] 4″ 400 P/E 0.008-0.018 SEMI Prime n-type Si:Sb [111-3°] 4″ 400 P/E 0.005-0.018 SEMI Prime n-type Si:As [111-3°] 4″ 400 P/E 0.001-0.005 SEMI Prime n-type Si:As [111-3°] 4″ 400 P/E 0.001-0.005 SEMI Prime n-type Si:As [111-4°] 4″ 525 P/E 0.001-0.005 SEMI Prime n-type Si:As [111-4°] 4″ 525 P/E 0.001-0.005 SEMI Prime n-type Si:As [111-2.5°] 4″ 525 P/E 0.001-0.005 SEMI Prime n-type Si:As [111-3°] 4″ 525 P/E 0.001-0.005 SEMI Prime Intrinsic Si:- [100] 4″ 525 P/E 400-1,000 SEMI Prime For more information, please visit our website: https://www.powerwaywafer.com, send us [...]

2019-03-06meta-author

Thermal Oxide Wafers, 2 – 4″ Research Grade-1

PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade. Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]

2019-05-20meta-author

Characterization of CdZnTe after argon ion beam bombardment

The objective of this work is to analyze the effects of argon ion irradiation process on the structure and distribution of Te inclusions in Cd1-xZnxTe crystals. The samples were treated with different ion fluences ranging from 2 to 8 × 1017 cm−2. The state of the samples before [...]

2013-11-08meta-author Argon ion sputtering, CdZnTe, Te inclusions

Ga2O3l-ß Crystal Substrate

Ga2O3l-ß Crystal Substrate PAM XIAMEN offers Ga2O3l-ß Crystal Substrate. Ga2O3-ß Single Crystal Substrate, <010>+/-1° ori, 1″x0.35mm, 2SP, Research grade with “Twin” Substrate Specifications: Chmistry: ß-Ga2O3 Structure: [...]

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Near-band-edge luminescence in heavily doped gallium arsenide

Near-band-edge luminescence in heavily doped gallium arsenide The near-band-edge photoluminescence at 80K of heavily tellurium-doped degenerate liquid-phase-epitaxial gallium arsenide layers (n=2*1018 cm-3) is investigated. The layers are compensated with shallow germanium acceptors (the values of the degree of compensation are K=0.05-0.7) during the epitaxial growth process. [...]

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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CdZnTe (CZT) Wafer

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Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

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PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

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Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

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PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

4″CZ Prime Silicon Wafer-11

4″CZ Prime Silicon Wafer-11

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