4″CZ Prime Silicon Wafer-11

4″CZ Prime Silicon Wafer-11

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PAM XIAMEN Offers 2inch InGaAs layer on InP substrate

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InGaAs wafer and other related products and services announced the new availability of size 2″  is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are pleased to offer InGaAs [...]

2017-06-19meta-author
Bonding characteristics of 3C-SiC wafers with hydrofluoric acid for high-temperature MEMS applications

This paper describes the bonding characteristics of 3C-SiC wafers using plasma enhanced chemical vapor deposition (PECVD) oxide and hydrofluoric acid (HF) treatment for SiC-on-insulator (SiCOI) structures and high-temperature microelectromechanical system (MEMS) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film [...]

2015-08-19meta-author
4″ Silicon Wafer-7

PAM XIAMEN offers 4″ Silicon Wafer.Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Commentp-type Si:B [100] 4″ 480 C/C 1-30 SEMI Test, UNPOLISHED WAFERS WITH EDGE CHIPSp-type Si:B [100] 4″ 500 P/P 1-50 SEMI Prime, Carbon content (0.2-0.9)E16/cc per ASTM F1319, Oxygen content (9.4-8.8)E17/ccp-type Si:B [100] 4″ 500 P/P 1-50 SEMI Prime, Carbon content ~1.0ppmap-type Si:B [100] 4″ 500 P/P 1-50 SEMI Prime, Carbon content ~0.2ppmap-type Si:B [100] 4″ 500 P/P 1-50 SEMI Prime, Carbon content (1.3-2.2)E16/cc per ASTM F1319, Oxygen content (7.9-7.7)E17/ccp-type Si:B [100] 4″ 500 P/P 1-50 SEMI [...]

2019-03-05meta-author
4″ Silicon EPI Wafer-4

PAM XIAMEN offers 4″ Silicon EPI Wafers.Substrate EPI CommentSize Type Res Ωcm Surf. Thick μm Type Res Ωcm4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P 600 ±10% N/N+4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P 340 ±10% N/N+4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P >200 N/N+4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 50 n- Si:P 36±4 N/N/N+4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 15 n- Si:P 5.4±0.7 N/N/N+4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 75 n- Si:P 66 ±10% N/N+4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 78 n- Si:P 25 ±10% N/N+4″Øx525μm n- Si:As[111] 0.001-0.005 P/EOx 78 n- Si:P 20 ±10% N/N+4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 80 n- Si:P 17.5 ±10% N/N+4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 80 n- Si:P 60±10% N/N/N+4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10 n- Si:P 2±1 N/N/N+4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 80 n- Si:P 70±10% N/N/N+4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10 n- Si:P 2±1 N/N/N+4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 22.5 p- Si:B 15±10% P/N/N+4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 15 n- Si:P 6±0.9 P/N/N+4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 38 p- [...]

2019-03-08meta-author
4″ FZ Silicon Ingot with Diameter 100.7±0.3mm

PAM XIAMEN offers 4″ FZ Silicon Ingot with Diameter 100.7±0.3mm Si wafers Orientation (100) Dia 6” x thickness 500µm Type n or p 1-20 ohm.cm One side polished For more information, send us email at [email protected] and [email protected]

2020-05-27meta-author
Thermodynamics and kinetic theory of nucleation and the evolution of liquid precipitates in gallium arsenide wafer

Thermodynamics and kinetic theory of nucleation and the evolution of liquid precipitates in gallium arsenide wafer   We study nucleation and evolution of liquid droplets in semi-insulating solid gallium arsenide (GaAs). For a realistic modelling, the crucial issue of a combined thermodynamic and kinetic treatment is [...]

2013-10-24meta-author , , ,