4″CZ Prime Silicon Wafer-11

PAM XIAMEN offers 4″CZ Prime Silicon Wafer-11

4″ Silicon Wafer
bare wafer
orientation <111>
P-type doped Boron
DSP/SSP
Thickness 500-550μm
Resistivity 0.01-0.02Ωcm

For more information, send us email at [email protected] and [email protected]

2020-04-23

(10-11) Plane U-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (10-11) Plane U-GaN Freestanding GaN Substrate Item PAM-FS-GAN(10-11)-U Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type / Undoped Resistivity (300K) < 0.1 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]

2020-08-20meta-author

8″CZ Prime Silicon Wafer-1

PAM XIAMEN offers 8″CZ Prime Silicon Wafer With Notch It will be carried out after the silicon ingot is made. A flat angle is cut on the silicon ingot below 200 mm, which is called flat. In order to reduce waste, only a small round hole [...]

2020-06-15meta-author

Formation of V-Shaped Pits in Nitride Films Grown by Metalorganic Chemical Vapor Deposition

Hyung Koun Cho∗ Department of Metallurgical Engineering, Dong-A University, Busan 604-714 Jeong Yong Lee Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejon 305-701 We have investigated the formation of V-shaped pits in nitride films such as InGaN/GaN and AlGaN/GaN grown on sapphire substrate [...]

2021-12-22meta-author

Chemical Mechanical Polishing on Silicon Carbide

After the growth, the silicon carbide single crystal is crystal ingot with surface defects, which cannot be directly used for epitaxy. Therefore, it requires chemical mechanical polishing on silicon carbide. Among the processing skills, spheronization makes the crystal ingot into a standard cylinder; wire [...]

2021-04-02meta-author

BaTiO3-2

PAM XIAMEN offers high-quality BaTiO3. BaTiO3 Substrates (110) BaTiO3 (110) 5x5x0.5 mm, 1SP, Substrate grade(with domains) BaTiO3 (110) 5x5x1.0 mm, 2SP, Substrate grade(with domains) BaTiO3 (110) 10 x 10 x0.5 mm, 1SP, Substrate grade (with domains) For more information, please visit our website: https://www.powerwaywafer.com, [...]

2019-04-17meta-author

Study of Highly Pixelated CdZnTe Detector for PET Applications

Study of Highly Pixelated CdZnTe Detector for PET Applications We are investigating the feasibility of a high-resolution PET insert device based on a Cadmium Zinc Telluride (CdZnTe) detector with 350 μm anode pixel pitch to be integrated into a conventional animal PET scanner to improve its [...]

2013-10-23meta-author CdZnTe detector, Charge sharing, Spatial resolution

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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CdZnTe (CZT) Wafer

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Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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Read More

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Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

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4″CZ Prime Silicon Wafer-11

4″CZ Prime Silicon Wafer-11

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