PAM XIAMEN offers 4″CZ Prime Silicon Wafer-11
4″ Silicon Wafer
bare wafer
orientation <111>
P-type doped Boron
DSP/SSP
Thickness 500-550μm
Resistivity 0.01-0.02Ωcm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
CZT Photon Counting Linear Array Detector PAM-PL01 series detectors are linear pixel electrode structured detector based on CZT crystal, they can counting X-ray and imaging. Specification Size 16 pixels 32 pixels Detector crystal CdZnTe Crystal Density 5.8g/cm3 Volume resistivity >1010Ω.cm Dimension 16.6×4.4mm2 12.9×4mm2 Thickness 2.0mm Pixel array 16×1 32×1 Pixel size 0.9×2.0mm2 0.3×0.3mm2 Electrode material Au Standard working voltage 450V Max. working voltage 600V Single pixel leakage current <0.1nA <0.01nA Max. counting rate >0.7Mcps/mm2 >8.0Mcps/mm2 Operation temperature 15℃~35℃ Storage temperture 10℃~40℃ Storage [...]
PAM XIAMEN offers InSb Wafer. InSb Ge-doped InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished InSb (100) 5x5x 0.45 mm, P type, Ge doped, 1 side polished-1 InSb (100) 2″ dia x 0.45 mm, P type, Ge doped , 1 [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaN and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are pleased to [...]
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade. Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
PAM XIAMEN offers Silicon Carbide Ceramic Substrate. Hexoloy SG SiC is a unique, patented analogue of Hexoloy SA SiC. It is a sintered silicon carbide and has no free silicon metal. It is electrically conductive, permitting DC-magnetron sputtering rates approximately half that of aluminum. It also has excellent thermal conductivity, which features with [...]
PAM XIAMEN offers 60+1mm FZ Si Ingot -2 FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° Resistivity>3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
