PAM XIAMEN offers 4″CZ Prime Silicon Wafer-11
4″ Silicon Wafer
bare wafer
orientation <111>
P-type doped Boron
DSP/SSP
Thickness 500-550μm
Resistivity 0.01-0.02Ωcm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Silicon wafers with various metal depositions are for sale in sizes from 2 inch to 12 inch. Metal deposition on silicon wafer is usually processing on the substrate surface, and thickness of the substrate typically is 300um~700um. A wafer list is shown below for [...]
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University,Shandong Univerity, university of south carolina,Caltech Faraon lab（USA）,University of California, [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 2″ 280 P/E 0.5-0.6 Prime, NO Flats p-type Si:B [100] 2″ 280 P/E 0.08-0.10 SEMI Prime p-type Si:B [100] 2″ 1000 P/E 0.073-0.090 SEMI Prime, p-type Si:B [100] 2″ 250 P/P 0.02-0.04 SEMI Prime p-type Si:B [100] 2″ 225 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 1000 P/P 0.015-0.045 SEMI Prime, p-type Si:B [100] 2″ 280 P/P 0.008-0.095 SEMI Prime p-type Si:B [100-4°] 2″ 300 P/P 0.003-0.004 SEMI Prime, p-type Si:B [100-6° towards[110]] 2″ 300 P/E 0.0026-0.0029 SEMI Prime p-type Si:B [100] 2″ 300 P/E 0.0023-0.0029 SEMI Prime p-type Si:B [100] 2″ 250 P/P 0.001-0.006 SEMI Prime, p-type Si:B [100-6° towards[110]] 2″ 275 P/E 0.001-0.005 SEMI Prime, p-type Si:B [100] 2″ 280 P/E 0.001-0.005 SEMI Prime, p-type Si:B [100] 2″ 300 P/E 0.001-0.005 Prime, NO Flats p-type Si:B [100] 2″ 500 P/P 0.001-0.005 SEMI Prime, p-type Si:B [111-10° towards[112]] 2″ 300 P/E 20-25 SEMI Prime p-type Si:B [111] 2″ 380 P/P 10-20 SEMI Prime p-type Si:B [111-2° towards[112]] 2″ 1000 P/P 10-30 SEMI Prime p-type Si:B [111] 2″ 500 P/P 2.4-2.6 SEMI Prime p-type [...]
PAM-XIAMEN offers 4inch Semi-insulating GaAs Substrate with good flatness such as TTV<=3UM, BOW<=4um, and WARP<5um, TIR(Total Indicated Runout)<=3um, LFPD(Local Focal Plane Deviation)<=1um, LTV(Local Thickness Variation)<=1.5um, which can be used for Microelectronic application. 1. Specification of Semi-insulating GaAs Substrate 1.1 Semi-insulated GaAs Substrate PAM190425-GAAS Parameter Customer’sRequirements Guaranteed/Actual Values UOM GrowthMethod: VGF VGF — ConductType:. S-I-N S-I-N — Dopant: Undoped Undoped Diameter: 100.0±0.2 100.0±0.2 mm Orientation: (100)±0.30offtoward (110) (100)±0.30offtoward [...]
Figure 1. A full InGaN structure grown on InGaN-on-sapphire (InGaNOS) substrates can span the spectrum from blue to amber. (Source: Soitec) The advantages presented by microLED displays include low power consumption, high resolution, quick response and high luminance. In addition, sensors can be embedded within [...]
A comparative study of the bonding energy in adhesive wafer bonding Adhesion energies are determined for three different polymers currently used in adhesive wafer bonding of silicon wafers. The adhesion energies of the polymer off-stoichiometry thiol-ene-epoxy OSTE+ and the nano-imprint resist mr-I 9150XP are determined. [...]
