PAM XIAMEN offers 4″CZ Prime Silicon Wafer-12
4″ CZ wafer, N type
Orientation: (100)±0.5
Type/Dopant: n/phosphorus
Resistivity: 1-5 Ω-cm
Diameter: 100 mm
Thickness: 525 ± 25 μm
Surface: P/E
Source: Prolog
SEMI Prime, 1Flat, hard cst
For more information, send us email at [email protected] and [email protected]
The growth of cubic silicon carbide on silicon, namely 3C-SiC/Si, has been extensively studied at the University of South Florida over the past decade and numerous electronic and biomedical applications explored using this material system. The key step to 3C-SiC devices is the growth [...]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 4″ 525 P/E SEMI Prime n-type Si:P [100] 4″ 525 P/E 7-11 SEMI Prime n-type Si:P [100] 4″ 224 P/E 5-10 SEMI Flats (two), Cassette of 12 + 13 wafers n-type Si:P [100] 4″ 224 BROKEN 5-10 SEMI Test n-type Si:P [100] 4″ 500 P/P 4-6 SEMI Prime n-type Si:P [100] 4″ 350 ±10 P/P 3-5 SEMI Prime n-type Si:P [100] 4″ 350 P/P 3-5 SEMI Test, Haze, pits, scratches n-type Si:P [100] 4″ 450 C/C 3-5 SEMI Prime n-type Si:P [100] 4″ 525 P/P 3-9 SEMI Prime n-type Si:P [100] 4″ 525 P/E 3-9 SEMI Prime n-type Si:P [100] 4″ 525 P/E 3-9 SEMI Prime, TTV<5μm n-type Si:P [100] 4″ 500 ±10 P/P 2-5 SEMI TEST (wafers have spots resembling water splashes, [...]
Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching The bowing curvature of the free-standing GaN substrate significantly decreased almost linearly from 0.67 to 0.056 m−1 (i.e. the bowing radius increased from 1.5 to 17.8 m) with increase in [...]
PAM XIAMEN offers 4″FZ Silicon Ignot. Silicon ingot, per SEMI, 100.7±0.3mmØ, FZ n-type Si:P[111]±2.0°, Ro=(2,000-4,000)Ohmcm, NO Flats. NOTE: Oxygen<1E16/cc, Carbon<1E16/cc, MCC Lifetime>1,000µs For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material [...]
PAM XIAMEN offers LD Bare Bar for [email protected] 3mm. Brand: PAM-XIAMEN Wavelength: 940nm Filling Factor: 50% Output Power: 200W Cavity Length:3mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., [...]
PAM XIAMEN offers 100mm Si wafers. Please send us email at [email protected] if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2535 n–type Si:P [100] 4″ 350 P/P 20–23 SEMI Prime, 14 wafes with 2 flats, 7 with 1 flat, Empak cst PAM2536 n–type Si:P [100] 4″ 525 P/E 10–30 SEMI, 2Flats, in Empak cassettes of 7 & 7 wafers PAM2537 n–type Si:P [100] 4″ 5800 P/E 10–100 SEMI Prime, 2Flats, [...]
