PAM XIAMEN offers 4″CZ Prime Silicon Wafer-12
4″ CZ wafer, N type
Orientation: (100)±0.5
Type/Dopant: n/phosphorus
Resistivity: 1-5 Ω-cm
Diameter: 100 mm
Thickness: 525 ± 25 μm
Surface: P/E
Source: Prolog
SEMI Prime, 1Flat, hard cst
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Highlights •N-polar InAlN thin films were grown on GaN substrates by molecular beam epitaxy. •Surface morphology transitioned from quasi-3D to step-flow at high temperature. •Indium saturation was observed for increasing indium flux at high temperature. •Increased aluminum flux helped increase indium incorporation efficiency. •N-polar InAlN films with 0.19 nm [...]
PAM XIAMEN offers 4″CZ Prime Silicon wafer-15 4″ CZ Silicon Wafer Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm, SEMI Flats (two), p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm, One-side-polished, back-side Alkaline etched, TTV<5μm, Bow/Warp<30μm, Wafers free of striation marks, Sealed in Empak or equivalent cassette. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of AlGaInP and other related products and services announced the new availability of size 2”&3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are pleased to offer AlGaInP layer to our [...]
PAM XIAMEN offers DyScO3/GdScO3//TbScO3. Crystal Structure /Lattice Constant(A) MP oC Density, g/cm3 Growth Tech DyScO3 Orthorombic a=5.44 b=5.71 c=7.89 2127 6.9 CZ GdScO3 Orthorombic a=5.45 b=5.75 c=7.93 2127 6.6 CZ TbScO3 Orthorhombic, a = 5.4543, b = 5.7233 c = 7.9147 2127 6.6 CZ DyScO3 DyScO3 (110) 5x5x0.5mm 1sp DyScO3 (110) 5x5x0.5mm 2sp DyScO3 (110) 10x10x0.5mm 1sp DyScO3 (110) 10x10x0.5mm 2sp DyScO3 (001) 10x10x0.5mm 1sp DyScO3 (001) 10x10x0.5mm 2sp [...]
Analytical model for event reconstruction in coplanar grid CdZnTe detectors Coplanar-grid (CPG) particle detectors were designed for materials such as CdZnTe (CZT) in which charge carriers of only one sign have acceptable transport properties. The presence of two independent anode signals allows for a reconstruction [...]
PAM XIAMEN offers Silicon Nitride film on Silicon Wafer. Silicon Nitride Film (LPCVD) on Silicon Wafer, 0.3um / 4″ — Si3N4-Si-4-300nm Silicon Nitride Film (PE-CVD) on Silicon Wafer, 100nm / 4″ — Si3N4-Si-4-100nm For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]
