PAM XIAMEN offers 4″CZ Prime Silicon Wafer-6
GE03. NOTE: Wafers must be free of striation marks
Silicon wafers, per SEMI Prime, P/P 4″Ø×525±25µm,
p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm,
TTV<5µm, Bow<30µm, Warp<30µm,
Both-sides-polished, SEMI Flat (one),
Sealed in Empak or equivalent cassette.
For more information, send us email at [email protected] and [email protected]
VCSEL Market Overview At present, the world’s major designers include Finsar, Lumentum, Princeton Optronics, Heptagon, IIVI and other companies, which are at the forefront of R&D roles on the mobile VCSEL. III-V EPI epitaxial wafers are supplied by companies such as IQE, PAM-XIAMEN, VPEC and Landmark [...]
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When it comes to choosing a material as the basic material for transistors in computers, the key matter we need to consider is resistance. Conductors have very low resistance and can conduct electricity easily; insulators have high resistance and cannot conduct electricity. For transistors, [...]
Custom Silicon Wafers PAM XIAMEN offers custom silicon Wafers from thinning or reclaiming substrates that you already have to making silicon cubes. We can laser cut or dice wafers into diameters and dimensions that you need. Below is just some of the custom silicon wafer services that [...]
PAM XIAMEN offers (100) orientation Silicon Substrates. Below is just a small selection. Let us know if you can use or if we can quote you on another spec. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2973 n-type Si:P [100] 4″ 500 P/P FZ 198-200 SEMI Prime, 2Flats, Empak cst PAM2974 n-type Si:P [100-6°] ±0.5° 4″ 325 P/P FZ 1-10 SEMI Prime, 2Flats, Empak cst PAM2975 Intrinsic Si:- [100] 4″ 300 P/P FZ >20,000 SEMI Prime, 1Flat, [...]
PAM XIAMEN offers FZ & MCZ silicon ingot and silicon wafer Description Growth Method — MCZ Single crystal size inch 2 – 8 Conductivity Type — N P Doped elements — P/Sb B Crystal Orientation — <111> <110> <100> <111> <110> <100> Resistivity Ω.cm 0.0015-100 0.001-100 RRG % 20 20 Oxygen Concentration atoms/cm3 1.00E+18 1.00E+18 Carbon Concentration atoms/cm3 5.00E+16 5.00E+16 Diameter mm 55-157 55-157 Length mm 50-500 50-500 Dislocation EA/cm2 N/A N/A Swirl(After Oxidation) — N/A N/A Remarks：The above parameters can be customized. 1″ FZ Silicon Ingot with Diameter 25mm 2″ FZ Silicon Ingot with Diameter 50mm 3″ FZ Silicon Ingot with Diameter [...]
