PAM XIAMEN offers 4″CZ Prime Silicon Wafer-6
GE03. NOTE: Wafers must be free of striation marks
Silicon wafers, per SEMI Prime, P/P 4″Ø×525±25µm,
p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm,
TTV<5µm, Bow<30µm, Warp<30µm,
Both-sides-polished, SEMI Flat (one),
Sealed in Empak or equivalent cassette.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Gain characteristics and femto-second optical pulse response of 1550 nm-band multi-stacked QD-SOA grown on InP(311)B substrate In this paper, we demonstrated 155 nm-band multi-stacked QD-SOA grown by the strain-compensation technique on an InP(311)B substrate, and evaluated the fundamental gain characteristics and the femto-second optical pulse response, [...]
PAM XIAMEN offers Silicon Nitride ( Si3N4) Substrate. Silicon nitride is synthesized through several different chemical reaction methods. Parts are pressed and sintered by well developed methods to produce a ceramic sheet with a unique set of outstanding properties. The material is dark gray [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 2″ 280 P/E 0.5-0.6 Prime, NO Flats p-type Si:B [100] 2″ 280 P/E 0.08-0.10 SEMI Prime p-type Si:B [100] 2″ 1000 P/E 0.073-0.090 SEMI Prime, p-type Si:B [100] 2″ 250 P/P 0.02-0.04 SEMI Prime p-type Si:B [100] 2″ 225 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 1000 P/P 0.015-0.045 SEMI Prime, p-type Si:B [100] 2″ 280 P/P 0.008-0.095 SEMI Prime p-type Si:B [100-4°] 2″ 300 P/P 0.003-0.004 SEMI Prime, p-type Si:B [100-6° towards[110]] 2″ 300 P/E 0.0026-0.0029 SEMI Prime p-type Si:B [100] 2″ 300 P/E 0.0023-0.0029 SEMI Prime p-type Si:B [100] 2″ 250 P/P 0.001-0.006 SEMI Prime, p-type Si:B [100-6° towards[110]] 2″ 275 P/E 0.001-0.005 SEMI Prime, p-type Si:B [100] 2″ 280 P/E 0.001-0.005 SEMI Prime, p-type Si:B [100] 2″ 300 P/E 0.001-0.005 Prime, NO Flats p-type Si:B [100] 2″ 500 P/P 0.001-0.005 SEMI Prime, p-type Si:B [111-10° towards[112]] 2″ 300 P/E 20-25 SEMI Prime p-type Si:B [111] 2″ 380 P/P 10-20 SEMI Prime p-type Si:B [111-2° towards[112]] 2″ 1000 P/P 10-30 SEMI Prime p-type Si:B [111] 2″ 500 P/P 2.4-2.6 SEMI Prime p-type [...]
PAM XIAMEN offers4″ FZ Prime Silicon Wafer-6 Substrate Monocrystalline Silicon Diameter 100 ±0.3mm Growth method Fz Lifetime>1000µsec Thickness 600± 25µm Type/DopantN/Phosphorus Orientation[110]±0.5° Resistivity>5,000 Ωcm TTV<10µm Bow/Warp<40µm Primary Flat Location@[111]±<0.25° Primary Flat Length 32.5± 2.5mm Secondary Flat Location@[111]70.5° CW from primary flat Front side finishMirror Polish Edge rounded per SEMI standard *Exception: No edge round on primary flat* Back side finish Mirror [...]
Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching Highlights •Porous GaN template was prepared by electrochemical and photoelectrochemical etching scheme. •InGaN/GaN light-emitting diode (LED) structure was overgrown on the etched GaN template. •Overgrown [...]
PAM XIAMEN offers SrTiO3 single crystal. SrTiO3 single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering [...]
