PAM XIAMEN offers 4″CZ Prime Silicon Wafer-6
GE03. NOTE: Wafers must be free of striation marks
Silicon wafers, per SEMI Prime, P/P 4″Ø×525±25µm,
p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm,
TTV<5µm, Bow<30µm, Warp<30µm,
Both-sides-polished, SEMI Flat (one),
Sealed in Empak or equivalent cassette.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
We investigated the effect of the thickness of a 3C-SiC buffer layer on the growth of GaN on a Si substrate. GaN samples with thicknesses of 2.0 and 4.5 µm were grown by metal organic vapor phase epitaxy. Islands were observed at the initial [...]
PAM XIAMEN offers 60+1mm FZ Si Ingot -2 FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° Resistivity>3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers LaAlO3 single crystal. LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well [...]
PAM XIAMEN offers YAG( undoped ,Ce-doped,Nd-doped). YAG (undoped) Undoped YAG is a substrate material that can be used for UV and IR optics. Sapphire has been the substrate of choice for these applications; however it is difficult to polish Sapphire to a 10-5 scratch-dig [...]
PAM XIAMEN offers 5″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 5″ 635 ±15 E/E FZ >5,000 p-type Si:B [100] 5″ 889 ±13 P/E FZ >1,000 Prime p-type Si:B [100] 5″ 920 ±10 E/E FZ >1,000 p-type Si:B [100] 5″ 920 ±10 E/E FZ >1,000 Warp measured <8μm n-type Si:P [100] 5″ 400 P/E FZ 7,000-14,300 SEMI Prime, Bow/Warp<20μm n-type Si:P [100] 5″ 400 P/E FZ 7,000-14,300 SEMI Prime, Bow/Warp<20μm n-type Si:P [100] 5″ 350 P/E FZ 5,000-10,000 SEMI Prime, Bow/Warp<20μm n-type Si:P [100] 5″ 350 P/E FZ 5,000-10,000 SEMI Prime, Bow/Warp<20μm, in Empak cassettes of 5 wafers n-type Si:P [111] ±0.1° 5″ 200 ±15 BROKEN FZ >3,000 Broken L/L wafers, in 2 pieces n-type Si:P [111] 5″ 300 ±15 P/E FZ 1,000-3,000 SEMI Prime, in [...]
Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices We report the effect of p-type AlGaInN/GaN superlattices (SLs) as electron-blocking layers (EBLs) on the optical properties of vertical light-emitting diodes (VLEDs). Using p-AlGaInN/GaN SLs in VLEDs, we have achieved significant improvements in [...]
