PAM-XIAMEN can provide a series products of terahertz chip: Power Amplifier (PA) Chip, Low Noise Amplifier (LNA) Chip, PIN/FET Switch, Zero Bias Detector Chip, Amplification Frequency Multiplication Chain (AMC) Chip, MIXER Chip, Schottky Frequency Multiplication MMIC, Schottky Mixing MMIC, and Attenuator Chip. The terahertz chip is a brand-new microchip, a [...]
2021-07-16meta-author
PAM XIAMEN offers 6″FZ Prime Silicon Wafer-3
6″ FZ Si wafer, 75pcs
Orientation: (100)±0.5
Type/Dopant: n/phosphorus
Resistivity: 1-5 Ω-cm
Life time : > 1000 μs
Thickness: 400 ± 25 μm
Carbon (atm/cm3): <2.0 x 1016
Oxygen (atm/cm3): < 2 x 1016
Diameter: 150 mm
Primary flat: Semi Std
Secondary flat: not essential
Front and back side Finish: [...]
2020-04-23meta-author
Abstract
The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 μm/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately [...]
2017-09-05meta-author
Phonon Properties of SiC Wafer
Nanyang Technological University use our SiC wafer to research Phonon Properties. They research focused on the phonon properties of crystal. Different crystal structures have slight different phonon
For more details, please refer to below publications:
https://www.nature.com/articles/s41467-018-04168-x
https://www.nature.com/articles/s41467-020-15767-y
Resonant nanostructures for highly confined and ultra-sensitive [...]
2020-09-21meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime, P/P 4″Ø×525±25µm,
p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm,
TTV<5µm, Bow<30µm, Warp<30µm,
Both-sides-polished, SEMI Flat (one),
Sealed in Empak or equivalent cassette.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and [...]
2019-07-05meta-author
PAM XIAMEN offers 6″ Prime EPI Wafer.
6″ EPI Wafer
diameter: 6″ (150 +-0,5 mm)
orientation: <100>
primary flat length: 57.5mm+/-2.5mm
primary flat: <110> +/- 1
no secondary flat
overall thickness 280-325μm
TTV <10um
WARP/BOW <50um
TIR <3um
EPI layer:
-type: n
-dopant: P [...]
2019-07-03meta-author