PAM XIAMEN offers 4″Silicon Ignot.
Silicon ingot, per SEMI, G 4″Ø (Diameter 100.5±0.3mm),
FZ Intrinsic undoped Si:-±0.5°, Ro > 20,000 Ohmcm,
Ground Ingot, NO Flats. Lifetime>1,000us,
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.