4″ CZ Prime Silicon Wafer

PAM XIAMEN offers 4″ CZ Prime Silicon Wafer.

4″ epi CZ P-type (100)±0.5°
Thickness 525±15μm
Resistivity 0.015±0.005Ωcm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

2019-06-28

Ge single crystal(Prime grade)-3

PAM XIAMEN offers 2″ Diameter Wafer-2″ wafers (100). 2″ Diameter Wafer 2″ wafers (100) 2“ Undoped Ge (100) Ge Wafer (100) Undoped, 2″ dia x 0.5 mm, 1SP, resistivities: >50 ohm-cm Ge Wafer (100) Undoped, 2″ dia x 0.5 mm, resistivities: >50 ohm-cm, 2SP [...]

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CaF2

Calcium fluoride crystal thin film of PAM-XIAMEN is provided with high band gap, high dielectric constant and high dielectric strength, which is an ideal dielectric material for preventing leakage current effectively. CaF2 is calcium fluoride chemical formula. The evaporation temperature of CaF2 in a [...]

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Ultra Thin GaAs Wafer

PAM-XIAMEN offers Ultra Thin GaAs Wafer with both side polished, which is for high-end products in the communication electronics or optoelectronics. The general thickness of the existing GaAs wafer is over 350μm, and the target thickness of the ultra-thin grinding disc is 100μm. PAM190709-GAAS with n type and undoped [...]

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4″Silicon Ignot-2

PAM XIAMEN offers 4″Silicon Ignot. Silicon ingot, per SEMI, G 4″Ø (Diameter 100.5±0.3mm), FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm, Ground Ingot, NO Flats. Lifetime>1,000us, Ox/Carbon <1E16/cc. For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found [...]

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Energy resolution report

Energy resolution report A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact [...]

2018-08-14meta-author

4″CZ Prime Silicon Wafer-7

PAM XIAMEN offers 4″CZ Prime Silicon Wafer-7 GG27b Silicon wafers, per SEMI Prime, P/E 4″Ø×500±25μm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm, One-side-polished, back-side Alkaline etched, SEMI Flat (one), Sealed in Empak or equivalent cassette, MCC Lifetime>1,000μs. For more information, send us email at [email protected] and [email protected]

2020-03-25meta-author

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PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

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Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

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PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

4″ CZ Prime Silicon Wafer

4″ CZ Prime Silicon Wafer

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