4″ Epitaxial Silicon Wafer

PAM XIAMEN offers 4″ Epitaxial Silicon Wafer. If necessary, we can do SRP (spreading resistance profile) test for you.

Item	Parameter		Spec	Unit
1	Growth Method		CZ
2	Diameter		100+/-0.5	mm
3	Type-Dopant		P- Boron
4	Resistivity		0.002 – 0.003	ohm-cm
5	Resistivity Radial Variation		<10	%
6	Crystal Orientation		<111> 4 +/- 0.5	degree
7	Primary Flat	Orientation	Semi	degree
7	Primary Flat	Length	Semi	mm
8	Secondary Flat	Orientation	Semi	degree
8	Secondary Flat	Length	semi	mm
9	Thickness		525 +/- 25	μm
10	TTV		≦10	μm
11	Bow		≦40	μm
12	Warp		≦40	μm
13	Front Surface		polished
14	Backside		etched	—
14	Backside		5000 +/-10% Angstoms SiO2	—
15	Surface Appearance		no Cratches, haze, edge chips, orange peel, defects,contamination	—
16	Edge Profile		Edge Rounding
17	Particle (>0.3μm)		N/A	ea/wf
18	—		—	—
19	Epi Layer 1		N Phos	—
20	Resistivity		3.8 – 5.2	ohm cm
21	Thickness		29.0 – 35.0	um
	—		—	—
22	Epi Layer 2		N Phos	—
23	Resistivity		0.0014 – 0.0026	ohm cm
24	Thickness		36.0 – 44.0	um

The SRP graph below shows the resistance and thickness of epilayers:

SRP of silicon epi layer

For more information, send us email at [email protected] and [email protected]

2021-03-16

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