4″ Epitaxial Silicon Wafer

4″ Epitaxial Silicon Wafer

PAM XIAMEN offers 4″ Epitaxial Silicon Wafer

 

ItemParameterSpecUnit
1Growth MethodCZ 
2Diameter100+/-0.5mm
3Type-DopantP- Boron 
4Resistivity0.002 – 0.003 ohm-cm
5Resistivity Radial Variation<10%
6Crystal Orientation<111>  4 +/- 0.5degree
7Primary FlatOrientationSemidegree
LengthSemimm
8Secondary FlatOrientationSemidegree
Lengthsemimm
9Thickness525 +/- 25μm
10TTV≦10μm
11Bow≦40 μm
12Warp≦40 μm
13Front Surfacepolished 
14Backsideetched
5000 +/-10% Angstoms SiO2
15Surface Appearanceno Cratches, haze, edge chips, orange peel, defects,contamination
16Edge ProfileEdge Rounding 
17Particle (>0.3μm)N/Aea/wf
18
19Epi Layer 1N Phos
20Resistivity3.8 – 5.2ohm cm
21Thickness29.0 – 35.0um
 
22Epi Layer 2N Phos
23Resistivity0.0014 – 0.0026ohm cm
24Thickness36.0 – 44.0um

 

For more information, send us email at [email protected] and [email protected]

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