4″ Epitaxial Silicon Wafer

4″ Epitaxial Silicon Wafer

PAM XIAMEN offers 4″ Epitaxial Silicon Wafer

 

Item Parameter Spec Unit
1 Growth Method CZ  
2 Diameter 100+/-0.5 mm
3 Type-Dopant P- Boron  
4 Resistivity 0.002 – 0.003  ohm-cm
5 Resistivity Radial Variation <10 %
6 Crystal Orientation <111>  4 +/- 0.5 degree
7 Primary Flat Orientation Semi degree
Length Semi mm
8 Secondary Flat Orientation Semi degree
Length semi mm
9 Thickness 525 +/- 25 μm
10 TTV ≦10 μm
11 Bow ≦40  μm
12 Warp ≦40  μm
13 Front Surface polished  
14 Backside etched
5000 +/-10% Angstoms SiO2
15 Surface Appearance no Cratches, haze, edge chips, orange peel, defects,contamination
16 Edge Profile Edge Rounding  
17 Particle (>0.3μm) N/A ea/wf
18
19 Epi Layer 1 N Phos
20 Resistivity 3.8 – 5.2 ohm cm
21 Thickness 29.0 – 35.0 um
 
22 Epi Layer 2 N Phos
23 Resistivity 0.0014 – 0.0026 ohm cm
24 Thickness 36.0 – 44.0 um

 

For more information, send us email at [email protected] and [email protected]

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