Highlights
•We fabricated HV AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain electrodes.
•We examine impact of temperature on the electrical parameters of fabricated devices.
•The use of Schottky drain contacts increase the breakdown voltage from 505 to 900 V.
•The SD-HEMTs are characterized by lower increase of Ron [...]
Silicon wafer bonding technology refers to the method of tightly combining silicon wafers with silicon wafers, silicon wafers with glass or other materials through chemical and physical interactions. Silicon wafer bonding is often combined with surface silicon processing and bulk silicon processing, and is [...]
2023-07-26meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
4
DSP
Antimony
N+
100
32,5 ± 2,5
110 ± 1
180 ± 5.0 °, 18.00 ± 2.00 mm
0.0 ± 1.0 °
0.010 – 0.020 Ohmcm
100.0 ± 0.5 mm
340 ± 10 µm
2
4
DSP
Antimony
N+
100
32,5 [...]
2019-02-25meta-author
PAM XIAMEN offers LSAT Substrate.
LSAT (LaAlO3)0.3 (Sr2AlTaO6)0.7 or (La,Sr)(Al,Ta)O3 is a kind of mature perovskite crystal with twin-free, LAST is well matched with high temperature superconductors and various oxide materials. In a large number of practical applications, last is expected to replace LaAlO3 and [...]
2019-05-07meta-author
Single-emitter LD Chip 1470nm @3W
PAM200914-LD-CHIP-1470nm
Brand: PAM-XIAMEN
Wavelength: 1470nm
Stripe width: 96um
Output Power: 3W
Cavity Length:2mm
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2019-05-09meta-author
PAM XIAMEN offers Lithium Chip.
Lithium Chip 16 mm Dia x 0.6 mm Thickness for Li-ion Battery R&D
Lithium chip is widely used for Li-ion and Li metal rechargeable battery R&D.
SPECIFICATIONS:
Purity
99.9% Lithium
Melting Point
180.5 °C
Density
0.534 g/cm3
Color
Silver
Dimension
16 mm x 0.6 mm
(diameter x [...]
2019-05-07meta-author