PAM-XIAMEN offers A Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN A-U
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
A plane (11-20) off angle toward M-axis 0 ±0.5°
A plane (11-20) off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-17meta-author
Fabrication of GaN wafers for electronic and optoelectronic devices
The fabrication of GaN wafers from GaN boules (ingots) is described. Gallium nitride boules were grown by hydride vapor phase epitaxy and sliced and sized into wafer blanks. The GaN wafer blanks were lapped and polished. [...]
PAM XIAMEN offers Au (epi) /Cr coated SiO2/Si substrate.
Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate , 6″x0.675 mm,1sp P-type B-doped, Au(111)=150 nm, Cr=20nm
Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Cr=5 nm
Au( highly oriented [...]
2019-04-26meta-author
GaN thin films were grown on ZnO/c-Al2O3 with excellent uniformity over 2 in. diameter wafers using a low temperature/pressure MOVPE process with N2 as a carrier and dimethylhydrazine as an N source. 5 mm×5 mm sections of similar GaN layers were direct-fusion-bonded onto soda lime glass substrates [...]
PAM XIAMEN offers 2″ Diameter Wafer-2″ wafers(110).
2″ Diameter Wafer
2″ wafers(110)
Ge Wafer (110)N type, Sb doped, 2″ dia x 0.5 mm, 1SP Resistivity: 0.1-0.5 ohm.cm
Ge Wafer (110)N type, Sb doped, 2″ dia x 0.5 mm, 1SP Resistivity: 0.82-0.98ohm.cm
Ge Wafer (110)N [...]
2019-04-25meta-author
PAM XIAMEN offers 4″CZ Epitaxial Prime Silicon Wafer.
4″ Si epi wafer
Growth Method: CZ
100 +/- 0.5 mm diameter silicon
Orientation <111> 4deg off
P Type Boron doped 0.002 – 0.003 ohm cm
Front side polished – Epi ready
thickness 525 +/-25 um [...]
2019-07-05meta-author