Super Low Stress Nitron on Silicon Wafers
PAM XIAMEN offers Super Low Stress Nitron on Silicon Wafers
When you need the thickest nitride Super Low Stress Nitride is the nitride to use.
We can deposit up to 4 micron of nitride using this method of nitride deposition.
SPECIFICATIONS
Thickness range: 50Å [...]
2019-02-11meta-author
The carrier concentration and thickness of n-type GaAs epitaxial layers were obtained by cell voltage measurements in anodization, and the results are compared with those obtained by differential C-V measurements. The carrier concentrations in the epi-layer are within the order of those obtained by [...]
2019-06-13meta-author
Atomic Layer Deposition (ALD), also known as atomic layer epitaxy (ALE), is an atomic-scale thin film preparation technology. It can deposit ultra-thin films with uniform thickness, controllable thickness and adjustable composition. With the development of nanotechnology and semiconductor microelectronics, the size requirements of devices [...]
2022-05-31meta-author
AlGaN template structure report
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by [...]
2018-08-14meta-author
PAM XIAMEN offers KH2PO4 crystal.
KH2PO4 (100), 10x10x 1.0 mm 1 Side polished
Crystal: Monopotassium Phosphate
Orientation: <100>
Size: 10 x 10 x 0.9 mm
Polished: one side polished
Package: 1000 class clean plastic bag sealed
Applications: Monopotassium Phosphate crystal [...]
2019-05-07meta-author
2″ Free Standing Gallium Nitride (GaN) Substrate
PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2″ SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production. (more…)
2012-03-06meta-author