4″ FZ (100) intrinsic, DSP
wafer Si FZ (100)
dia 4’’ x 525µm
intrinsic
R > 20,000 ohm.cm
2 sides polished with SEMI Std flats
Roughness<0.5nm
For more information, send us email at [email protected] and [email protected]
Fully spectroscopic x/γ-ray imaging is now possible thanks to advances in the growth of wide-bandgap semiconductors. One of the most promising materials is cadmium zinc telluride (CdZnTe or CZT), which has been demonstrated in homeland security, medical imaging, astrophysics and industrial analysis applications. These [...]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment Intrinsic Si:- [100] 4″ 500 P/E FZ 13,000-20,000 SEMI Prime, TTV<5μm, Front-side Prime polish, Back-side light polish Intrinsic Si:- [100] 4″ 615 ±10 C/C FZ >10,000 SEMI Prime Intrinsic Si:- [100] 4″ 800 C/C FZ >10,000 SEMI Prime Intrinsic Si:- [111] ±0.5° 4″ 525 P/E FZ >22,000 SEMI Prime Intrinsic Si:- [111] ±0.5° 4″ 300 P/E FZ 20,000-40,000 SEMI, TTV<5μm Intrinsic Si:- [111] ±0.5° 4″ 450 P/P FZ >20,000 SEMI Prime Intrinsic Si:- [111] ±0.5° 4″ 500 P/E FZ >20,000 SEMI Prime, Extra 3 free non-prime wafers included with 4 prime wafers Intrinsic Si:- [111] ±1.0° 4″ 500 P/P FZ >15,000 SEMI Prime, TTV<5μm p-type Si:B [110] ±0.25° 4″ 525 P/E 5-10 SEMI [...]
PAM XIAMEN offers 2″ FZ Intrinsic Silicon Wafer Silicon, 2″ Intrinsic Orientation <100>, Resistivity >10,000Ωcm, Thickness 280±10um, DSP, TTV<5um, Bow/Warp<30um, 2 SEMI Flats, Prime Grade, Particle @0.3µm, <20 count Good surface quality for Thermal Oxide growth For more information, send us email at [email protected] and [email protected]
Indium antimonide (InSb) thin film magnetoresistor, which is the core sensitive element of magnetoresistance (MR) sensor, is provided from PAM-XIAMEN with characteristics of non-contact measurement, small size, high reliability, high signal-to-noise ratio and wide frequency response (0-100kHz). InSb magnetoresistance is a new type of [...]
Effect of annealing on the residual stress and strain distribution in CdZnTe wafers The effect of annealing on residual stress and strain distribution in CdZnTe wafers was studied based using an X-ray diffraction (XRD) method. The results proved the effectiveness of annealing on the reduction [...]
PAM-XIAMEN Offers GaAs LED epitaxy wafer. Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAs epi wafer and other related products and services announced the new availability of size 2”&4” is on mass production in 2010. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, [...]
