PAM-PA01 series are pixel electrode structured detectors based on CZT crystal. They can detect X-ray, γ-ray and imaging. They have a high energy and space resolution.
1. Specification of CZT High Resolution Pixel Detector
Material
CdZnTe
Density
5.8g/cm3
Volume resistance
>1010Ω.cm
Dimensions
10.0×10.0mm2
Thickness
2.0mm
5.0mm
Pixel size
1.1×1.1mm2
Pixel array
8×8
Electrode material
Au
Operation temperature
-20℃-+40℃
Energy range
20KeV~700MeV
20KeV~700MeV
Energy resolution(22℃)
<6%@59.5KeV
<4.5%@122KeV
<3%@662KeV
Defective pixel(DP)
10℃~40℃
Storage temperture
20%-80%
Remarks
Customized available
2. Spectrum of [...]
2019-04-24meta-author
PAM XIAMEN offers 80+1mm FZ Si Ingot-2
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
2020-03-18meta-author
PAM XIAMEN offers silicon wafers
Silicon Wafer Mobility Calculator
Indium Tim Oxide (ITO) – Float Zone Silicon – LiNbO3 – InGaAs – Nitride on Silicon – Aluminum – Silicon Carbide (SiC) – GaN on Sapphire
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a [...]
2019-02-25meta-author
PAM XIAMEN offers Fe2O3 crystal .
Alpha-Fe2O3 Crystal (0001) < 0.4deg, Edge oriented, 5x5x1.0mm,1SP
Specifications:
Crystal: Alpha-Fe2O3 natural source with defects
Purity: >99.95%
Size: [...]
2019-04-19meta-author
PAM-XIAMEN offers (20-21) Plane N-GaN Freestanding GaN Substrate:
Item
PAM-FS-GAN(20-21)-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at [email protected] and [email protected]
2020-08-20meta-author
PAM XIAMEN offers Single crystal LiAlO2.
LiAlO2 is a potential substrate for III-V nitride thin films due to its excellent lattice mismatch to GaN ( <1.4 % at <100> ), chemical stability at high temperature and cost effective than ZnO. LiAlO2 crystal can replace [...]
2019-05-07meta-author