4″ FZ (100) intrinsic, DSP
wafer Si FZ (100)
dia 4’’ x 525µm
intrinsic
R > 20,000 ohm.cm
2 sides polished with SEMI Std flats
Roughness<0.5nm
For more information, send us email at [email protected] and [email protected]
Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two majority-carrier traps (MA1,MA2) and three minority-carrier traps (MI1, MI2, [...]
GaAs Schottky Diode Epitaxial Wafers We offer GaAs Epitaxial Wafers for Schottky Diode as follows:Epitaxial Structure PAM210319No. Material Composition Thickness Target(um) Thickness Tol. C/C(cm3) Target C/C Tol. Dopant Carrrier Type4 GaAs 1.00 ±10% ＞5.0E18 N/A Si N++3 GaAs 0.28 ±10% 2.0E17 ±10% Si N2 Ga1-xAlxAs x=0.50 1 ±10% — N/A — —1 GaAs 0.05 ±10% — N/A — —Substrate: 2”,3”,4″ Millimeter and submillimeter heterodyne observations will improve our understanding of the universe, the solar system and the Earth atmosphere. Schottky diodes are strategical components [...]
Effects of post-growth annealing on the performance of CdZnTe:In radiation detectors with different thicknessAn effective post-growth annealing method was used to improve the performance of CdZnTe:In (CZT:In) radiation detectors. The results indicated that Te inclusions in CZT:In crystals with different thickness were eliminated completely [...]
Germanium was an early transistor material. Now its charge-carrying abilities and advanced fabrication technology make it an attractive material for future chips. As a proof of concept, our team used germanium-on-insulator wafers to construct inverters containing first planar transistors and then FinFETs Germanium was first [...]
PAM XIAMEN offers Single crystal TeO2. TeO2 (110) 10x10x0.5mm, 1sp TeO2 (001) 5x5x0.3mm, 2sp TeO2 (110) 10x10x0.5mm, 2sp For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is [...]
PAM XIAMEN offers 4″CZ Prime Silicon Wafer. 4″ Si substrate wafer Growth Method: CZ 100 +/- 0.5 mm diameter silicon Orientation <111> 4deg off P Type Boron doped 0.002 – 0.003 ohm cm Front side polished – Epi ready thickness 525 +/-25 um Back [...]
