4″ FZ (100) intrinsic, DSP
wafer Si FZ (100)
dia 4’’ x 525µm
intrinsic
R > 20,000 ohm.cm
2 sides polished with SEMI Std flats
Roughness<0.5nm
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 3″LiNbO3 single crystal thin film LiNbO3 single crystal thin film (X，Y，Z), X-cut 10μm; Substrate: 3″ Si 0.5 0.4mm;(PAM-P20412-LNOI ) Structure:Top layer: LiNbO3 single crystal thin film X-cut 10 μm Substrate: 3″ Si 0.4mm, Resistivity >10,000Ωcm Surface Roughness<0.5nm TTV (Thickness Uniformity) <1.2μm, 17 [...]
PAM XIAMEN offers 6″CZ Si Wafer with low LPD Wafer Si CZ (100) Dia 6” x Thickness 675µm Type p doped B Resistivity 1-20 ohm.cm With one flat One Side Polished or Double Side Polished LPD’s < 50 @ 0.2um TTV < 25µm Bow < 60µm Warp < 60µm Absorption coefficient of DSP silicon substrate [...]
PAM XIAMEN offers (112) Orientation Silicon Wafers. If you don’t see what you need then please email us your specs. Item Type/Dopant Ori Dia (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM3026 n-type Si:P [112-5.0° towards[11-1]] ±0.5° 6″ 875 ±10 E/E FZ >3,000 SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips PAM3027 n-type Si:P [112-5° towards[11-1]] ±0.5° 6″ 1,000 ±10 C/C FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, [...]
PAM XIAMEN offers 2″ Monocrystalline silicon wafers with insulating oxide 2″ Monocrystalline silicon wafers with insulating oxide Polishing: one-sided for microelectronics Thickness: 675 +/- 20 microns TTV <15 μm, Warping <35 μm P type Orientation <100> The thickness of the insulating oxide layer is 300 nm Resistance of the base plate ≥ 10 [...]
PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 3″ 1500 P/E 5-7 SEMI Prime n-type Si:P [100] 3″ 350 P/P 1-5 SEMI Prime n-type Si:P [100] 3″ 350 P/P 1-25 SEMI Prime, TTV<1μm, Empak cst n-type Si:P [100] ±1° 3″ 500 P/P 1-100 SEMI Prime, TTV<2μm, Empak cst n-type Si:P [100-4°] ±0.5° 3″ 500 P/E 1-20 Prime n-type Si:P [100] 3″ 650 P/P 1-10 Prime, TTV<2μm n-type Si:P [100] 3″ 1000 P/P 1-5 SEMI Prime, hard cst n-type Si:P [100] 3″ 1000 P/E 1-20 SEMI Prime n-type Si:P [100] 3″ 6000 P/E 1-20 SEMI Prime, Individual cst n-type Si:Sb [100] 3″ 300 P/E 0.02-0.04 SEMI Prime, in hard cassettes of 2 wafers n-type Si:Sb [100] 3″ 381 P/E 0.008-0.020 SEMI Prime n-type Si:As [100] 3″ 380 P/EOx 0.001-0.005 SEMI Prime, LTO Back-side seal [...]
In this paper, a sandwich structure comprising a SiO2 capping layer, amorphous Germanium (a-Ge) nanodots (NDs), and a pit-patterned Silicon (Si) substrate is developed, which is then annealed by utilizing a pulsed ultraviolet excimer laser in order to fabricate an array of pure, single crystal [...]
