4″ FZ (100) intrinsic, DSP
wafer Si FZ (100)
dia 4’’ x 525µm
intrinsic
R > 20,000 ohm.cm
2 sides polished with SEMI Std flats
Roughness<0.5nm
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers Silicon-Nitride on Corning 7980. Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um Silicon Nitride Film...
PAM XIAMEN offers 3" Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 76.2 P Boron CZ -100 .001-.005 350-400 P/E PRIME 76.2 P Boron CZ -100 .005-.02 350-400 P/E PRIME 76.2 P Boron FZ -100 >3000 350-400 P/E PRIME 76.2 P Boron CZ -100 1-20 350-400 P/E PRIME 76.2 P Boron CZ -100 1-20 350-400 P/E/DTOx PRIME 76.2 P Boron CZ -100 1-20 350-400 P/E/Ni PRIME 76.2 P Boron CZ -100 1-20 350-400 P/E/WTOx 76.2 P Boron CZ -100 1-20 450-500 P/P PRIME 76.2 P Boron CZ -100 1-20 500-550 P/E PRIME 76.2 P Boron CZ -100 1-10 825-875 P/P PRIME 76.2 P Boron CZ -100 1-20 850-1000 P/P PRIME 76.2 P Boron CZ -100 1-20 1000-1050 P/E PRIME 76.2 P Boron CZ -111 1-20 300-350 P/P PRIME 76.2 P Boron CZ -111 1-20 350-400 P/E PRIME 76.2 P Boron CZ -110 >100 275-325 P/P PRIME 76.2 P Boron CZ -110 1-20 350-400 P/E PRIME 76.2 P Boron CZ -110 100-200 800-850 P/P PRIME 76.2 Any Any CZ Any Any 250-500 P/E TEST 76.2 Any Any CZ -100 1-100 330-430 P/E PRIME 76.2 Intrinsic Undoped FZ -100 > 15000 350-400 P/E PRIME 76.2 Intrinsic Undoped FZ -111 > 15000 350-400 P/E PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and...
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