4″ FZ (100) intrinsic, DSP
wafer Si FZ (100)
dia 4’’ x 525µm
intrinsic
R > 20,000 ohm.cm
2 sides polished with SEMI Std flats
Roughness<0.5nm
For more information, send us email at [email protected] and [email protected]
PAM-PA01 series are pixel electrode structured detectors based on CZT crystal. They can detect X-ray, γ-ray and imaging. They have a high energy and space resolution. 1. Specification of CZT High Resolution Pixel Detector Material CdZnTe Density 5.8g/cm3 Volume resistance >1010Ω.cm Dimensions 10.0×10.0mm2 Thickness 2.0mm 5.0mm Pixel size 1.1×1.1mm2 Pixel array 8×8 Electrode material Au Operation temperature -20℃-+40℃ Energy range 20KeV~700MeV 20KeV~700MeV Energy resolution(22℃) <6%@59.5KeV <4.5%@122KeV <3%@662KeV Defective pixel(DP) 10℃~40℃ Storage temperture 20%-80% Remarks Customized available 2. Spectrum of [...]
PAM XIAMEN offers 80+1mm FZ Si Ingot-2 FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers silicon wafers Silicon Wafer Mobility Calculator Indium Tim Oxide (ITO) – Float Zone Silicon – LiNbO3 – InGaAs – Nitride on Silicon – Aluminum – Silicon Carbide (SiC) – GaN on Sapphire For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a [...]
PAM XIAMEN offers Fe2O3 crystal . Alpha-Fe2O3 Crystal (0001) < 0.4deg, Edge oriented, 5x5x1.0mm,1SP Specifications: Crystal: Alpha-Fe2O3 natural source with defects Purity: >99.95% Size: [...]
PAM-XIAMEN offers (20-21) Plane N-GaN Freestanding GaN Substrate: Item PAM-FS-GAN(20-21)-N Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type / Si Doped Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]
PAM XIAMEN offers Single crystal LiAlO2. LiAlO2 is a potential substrate for III-V nitride thin films due to its excellent lattice mismatch to GaN ( <1.4 % at <100> ), chemical stability at high temperature and cost effective than ZnO. LiAlO2 crystal can replace [...]
