4″ FZ (100) intrinsic, SSP
wafer Si FZ (100)
dia 4’’ x 525µm
intrinsic
R > 20,000 ohm.cm
one side polished with SEMI Std flats
Roughness<0.5nm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
In the production process of single crystal silicon, impurities such as carbon and oxygen are inevitably introduced due to factors such as raw materials and methods, which directly affect the performance of single crystal silicon. For example, the annealed silicon wafer supplied by us, [...]
PAM XIAMEN offers silicon wafers Silicon Wafer Mobility Calculator Indium Tim Oxide (ITO) – Float Zone Silicon – LiNbO3 – InGaAs – Nitride on Silicon – Aluminum – Silicon Carbide (SiC) – GaN on Sapphire For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a [...]
Single crystal germanium (Ge) material is an important hard and brittle infrared optical material, belonging to indirect transition semiconductor with high hole mobility and electron mobility. It is widely used in aerospace, high-frequency ultra-high frequency electronics, optical fiber communication, infrared optics, solar cells and [...]
PAM XIAMEN offers BGO, Bismuth germanate, Bi4Ge3O12 Scintillation Crystals. SPECIFICATIONS: Crystal structure: Cubic Lattice Parameter: a=10.518 Å Density: 7.13（g/cm3） Hardness: 5（mohs） Melt point: 1050℃ Index of refraction: 2.15 Radiation length: 1.1cm Peak of fluorescence spectra : 480nm Decay time: 300ns Relative light output（%）: 10-14 Nal（Tl） Energy resolution: 20% @511KV Crystal orientation: <001>、<110> Size（mm):Special size and orientation are available upon request Polishing: Single or double Packaging: Clean room MAIN APPLICATIONS Positron emission tomography (PET) High-energy physics Nuclear medicine Geological prospecting Gamma pulse spectroscopy BGO [...]
AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers. AlGaInP layer is often grown by heteroepitaxy on gallium arsenide or gallium phosphide in order to form a quantum well structure. 1.Specs of AlGaInP Wafers on Chips AlGaInP LED Wafer [...]
PAM-XIAMEN offers (20-21) Plane N-GaN Freestanding GaN Substrate: Item PAM-FS-GAN(20-21)-N Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type / Si Doped Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
