4″ FZ (100) intrinsic, SSP
wafer Si FZ (100)
dia 4’’ x 525µm
intrinsic
R > 20,000 ohm.cm
one side polished with SEMI Std flats
Roughness<0.5nm
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 8″ CZ Silicon Wafer SSP Growth Method: CZ Diameter: 200.0±0.5mm Type/Dopant: P/Boron Orientation: (111) ±0.5° Resistivity: <1Ωcm Notch: SEMI Standard Thickness: 1,000 ±25um TTV <6um Bow <60um Warp <60um Frontside Surface: Polished Backside Surface: Etched Particle ≦[email protected]≧0.3um For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 3″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 76.2 N Phos CZ -100 1-20 43768 P/P PRIME 76.2 N Phos CZ -100 1-20 40-60 P/P PRIME 76.2 N Phos CZ -100 1-20 80-100 P/P PRIME 76.2 N Phos CZ -100 1-20 140-160 P/P PRIME 76.2 N Phos FZ -100 >3000 300-350 P/P PRIME 76.2 N Phos CZ -100 1-20 300-350 P/P PRIME 76.2 N Phos CZ -100 1-20 300-350 P/E PRIME 76.2 N Phos CZ -100 350-400 P/E/OX PRIME 76.2 N As CZ -100 .001-.005 350-400 P/E PRIME 76.2 N Sb CZ -100 .005-.02 350-400 P/E PRIME 76.2 N Phos FZ -100 >3000 350-400 P/E PRIME 76.2 N Phos CZ -100 1-20 350-400 P/E PRIME 76.2 N Phos CZ -100 1-20 350-400 P/E/DTOx PRIME 76.2 N Phos CZ -100 1-20 350-400 P/E/Ni PRIME 76.2 N Phos CZ -100 1-20 350-400 P/E/WTOx 76.2 N Phos CZ -100 20-50 350-400 P/P PRIME 76.2 N Phos CZ -100 20-50 350-400 P/P PRIME 76.2 N Phos CZ -100 20-50 400-450 P/E PRIME 76.2 N Phos CZ -100 450-500 P/P PRIME 76.2 N Phos CZ -100 500-550 P/E PRIME 76.2 N Phos CZ -100 950-1000 P/P PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
PAM XIAMEN offers high-quality Al2O3 (Sapphire). R-Plane (1-102) Square Al2O3(11-02) substrate Al2O3- Sapphire Wafe, R Plane, 5x5x0.5mm, 1SP Al2O3-Sapphire Wafe, R Plane, 5x5x0.5mm, 2SP Al2O3- Sapphire Wafer, R Plane, 10x10x0.5mm, 1SP Al2O3-Sapphire Wafer, R Plane, 10x10x0.5mm, 2SP Al2O3- Sapphire Wafer, R Plane, 10x10x1.0mm, 1SP Al2O3-Sapphire Wafe, R Plane, 0.5″x0.5″x0.5 [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAsP materials and other related products and services announced the new availability of 2″-3” size is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.Dr. Shaka, said, “We are pleased to offer GaAsP wafers to our [...]
A phenomenon commonly encountered in grinding of silicon wafers is the grinding marks, which are difficult to remove by subsequent polishing process, and have been a great obstacle to the manufacture of silicon wafers with higher flatness. In this paper, the grinding marks formation [...]
PAM XIAMEN offers Si-Ge alloy crystal. Si-Ge or silicon-germanium alloy wafer is commonly used as semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. Si-Ge alloys wafer are of interest because they have higher mobility [...]
