PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100-6°]
4″
525
P/E
1-100
SEMI Prime
p-type Si:B
[100]
4″
350
P/E
0.08-0.12
SEMI Prime, TTV<5μm
p-type Si:B
[100-4°] ±0.5°
4″
381
P/E
0.01-0.02
SEMI Prime
p-type Si:B
[100]
4″
800
P/EP
0.01-0.02
SEMI Prime
p-type Si:B
[100]
4″
3100
P/P
CZ 0.006-0.009
SEMI Prime, Individual cst
p-type Si:B
[100-6°]
4″
525
P/E
0.0042-0.0047
SEMI Prime
p-type Si:B
[100]
4″
150 ±15
P/P
0.001-0.005
SEMI Prime, TTV<2μm
p-type Si:B
[111-3°]
4″
300
P/E
3-4
SEMI Prime
p-type Si:B
[111-3°]
4″
400
P/E
0.015-0.018
SEMI Prime
p-type Si:B
[111]
4″
525
P/E
0.005-0.006
SEMI Prime
p-type Si:B
[111-1.5°]
4″
525
P/E
0.002-0.004
SEMI Prime
p-type Si:B
[111]
4″
300
P/E
0.001-0.005
SEMI Prime
n-type Si:P
[110] ±0.5°
4″
525
P/P
20-80
SEMI Prime @ [111] – Secondary 70.5° [...]
2019-03-06meta-author
PAM XIAMEN offers 2″ Diameter Wafer-2″ wafers(110).
2″ Diameter Wafer
2″ wafers(110)
Ge Wafer (110)N type, Sb doped, 2″ dia x 0.5 mm, 1SP Resistivity: 0.1-0.5 ohm.cm
Ge Wafer (110)N type, Sb doped, 2″ dia x 0.5 mm, 1SP Resistivity: 0.82-0.98ohm.cm
Ge Wafer (110)N [...]
2019-04-25meta-author
III-nitrides are suitable for working in extreme conditions due to their excellent radiation hardness and high temperature properties. Therein, the fabrication of various types of GaN-based photodetectors (PDs) has been reported over the past decade. In addition, the high conductivity of silicon substrate has [...]
2022-07-29meta-author
Physicists reveal material for high-speed quantum internet
Electrical excitation causes a point defect in the crystal lattice of silicon carbide to emit single photons, which are of use to quantum cryptography. Credit: Elena Khavina, MIPT
Researchers from the Moscow Institute of Physics and Technology have rediscovered [...]
2018-07-25meta-author
GaAs quantum well VCSEL wafer with an emission wavelength of 808nm is available for optical pumping. VCSEL (Vertical Cavity Surface Emitting Laser) is developed on the basis of gallium arsenide semiconductor materials. The VCSEL fabrication of devices has the advantages of small size, small [...]
2021-07-19meta-author
Through continuous efforts, PAM-XIAMEN has developed large-scale COP-free CZ silicon (Si) wafers, and effectively controlled the generation of COP in the ingot by improving the thermal field of crystal pulling, thereby achieving performance improvement and power consumption reduction. The 8-inch silicon wafer application process [...]
2022-06-06meta-author