GQ23b Silicon wafers, per SEMI Prime, P/P
4″Ø×525±10μm,
FZ n-type Si:P
[100]±0.5°,
Ro=(7,000-10,000)Ohmcm,
TTV<5μm, Bow<30μm, Warp<30μm,
Both-sides-polished,
SEMI Flat one: Length 32.5±2mm @ 110,
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, send us email at [email protected] and [email protected]
SPECT, γ-imaging Detector PAM-PA02 is a large size pixel detector based on CZT crystal. They have an extremely high energy resolution and space resolution with a low dose incident of radiation. Specification Material CdZnTe Density 5.8g/cm3 Volume resistance >1010Ω.cm Dimensions 25.4×25.4mm2 Thickness 5.0mm Pixel size 1.5×1.5mm2 Pixel center-to-center space 1.6mm Pixel array 16×16 Electrode material Au Operation temperature -20℃-+40℃ Energy range 20KeV!~700MeV Energy resolution(22℃) Average<6%@122KeV (>13% means defective pixel) Photo-Peak Efficiency(PPE) Average>40% Defined [...]
PAM XIAMEN offers PMN-PT Crystals. 10 x 10 x 0.5 mm PMN-PT Piezoelectric Crystal (111) Pb(Mg1/3Nb2/3)O3-PbTiO3 SSP 10 x 10 x 0.5 mm Pyroelectric Crystal PMN-PT (111) Pb(Mg1/3Nb2/3)O3-PbTiO3 SSP 5 x 10 x 0.5 mm PMNT Electro-Optic Crystal (001) Pack SSP 5 x 10 x 0.5 mm PMNT [...]
Powerway Wafer offers III-nitride GaN LED Epi wafer on flat or patterned Sapphire as listed below, which emits blue or green lights. The GaN LED market size is 50mm, 100mm, 150mm or 200mm. The GaN LED emission wavelength can reach 530nm. A high crystal quality GaN can be gained by depositing [...]
In order to understand dislocations in GaN grown on silicon using metal organic chemical vapor deposition (MOCVD), two samples with different film thickness were grown. The distribution of dislocations and its influence on epitaxial layer were studied. Wet etching can effectively reveal the dislocations in GaN, [...]
PAM XIAMEN offers FZ Silicon Ignot Diameter 80+1mm. FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity>30000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, please visit our website: https://www.powerwaywafer.com, [...]
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade. Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
