PAM XIAMEN offers 4″ FZ N type Si wafer, which can be used for research on silicon quantum devices.
GQ23b Silicon wafers, per SEMI Prime, P/P
4″Ø×525±10μm,
FZ n-type Si:P
[100]±0.5°,
Ro=(7,000-10,000)Ohmcm,
TTV<5μm, Bow<30μm, Warp<30μm,
Both-sides-polished,
SEMI Flat one: Length 32.5±2mm @ 110,
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, send us email at [email protected] and [email protected]
Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy GaN freestanding substrate was obtained by hydride vapor phase epitaxy directly on sapphire with porous network interlayer. The morphologies of Ga-face and N-face of freestanding GaN substrate were analyzed [...]
Cree Recalls 112,500 LED T8 Tube Lights in North America Over Burn Hazard Recall date: AUGUST 25, 2016 Recall number: 16-252 Recall Summary Name of product: Cree® LED T8 Replacement Lamps Hazard: The recalled lamps can overheat and melt, posing a burn hazard. Cree LED tube lights being recalled in North America. (Cree/LEDinside) Remedy: View Details Refund Consumer [...]
PAM-XIAMEN offers SiC(Silicon Carbide) Boule Crystal with available size:2”,3”,4”,6” with two available length:5~10mm or 10~15mm. Fix size is workable such as 10mm, please see below specification of 4”size and 6”size: No.1: 4″ SiC Boule Crystal, Production Grade Polytype: Production- 4H Diameter: Production-100,0 mm+/-0,2 mm Carrier type: [...]
PAM-XIAMEN can offer 6H SiC wafer with n type or semi-insulating. Silicon carbide wafer is a material presenting different crystalline structures called polytypes, which has more than 250 structures. Different polytypes has different atomic stacking sequences. Polytypes generate the cubic, hexagonal or rhombohedral structures, which include [...]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 4″ 300 P/P 5-10 SEMI Test, Scratched and unsealed. Can be re-polished for extra fee p-type Si:B [100] 4″ 380 P/E 5-10 SEMI TEST (in Opened cassette), 2Flats p-type Si:B [100] 4″ 380 P/E 5-10 SEMI Prime p-type Si:B [100] 4″ 380 P/E 5-10 SEMI TEST (with bad surface) p-type Si:B [100] 4″ 380 P/E 5-10 SEMI Prime, hard cst, Back-side slightly darker than normal p-type Si:B [100] 4″ 380 P/E 5-10 SEMI Test, Dirty wafers, can be cleaned for extra fee p-type Si:B [100] 4″ 380 BROKEN 5-10 Broken P/E Wafers, [...]
THz Generation Process in LT-GaAs Optical down-conversion is the most successful commercial technique for THz generation using Low temperature grown GaAs (LT-GaAs). The technique is often known as Terahertz Time-Domain Spectroscopy (THz-TDS). This technique works by optical pulse excitation of a photoconductive switch. Here, a [...]
