PAM XIAMEN offers 4″ FZ N type Si wafer, which can be used for research on silicon quantum devices.
GQ23b Silicon wafers, per SEMI Prime, P/P
4″Ø×525±10μm,
FZ n-type Si:P
[100]±0.5°,
Ro=(7,000-10,000)Ohmcm,
TTV<5μm, Bow<30μm, Warp<30μm,
Both-sides-polished,
SEMI Flat one: Length 32.5±2mm @ 110,
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
High-quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa flux dependent structural, morphological, and electrical characteristics of GaN films were investigated by x-ray diffraction analysis (XRD), reflection high-energy electron [...]
A 6-inch MicroLink Devices high-efficiency, lightweight and flexible ELO IMM solar cell wafer. Credit: MicroLink Devices The U.S. Department of Energy’s (DOE) National Renewable Energy Laboratory (NREL) has entered into a license agreement with MicroLink Devices, Inc. (Niles, IL) to commercialize NREL’s patented inverted metamorphic [...]
PAM-XIAMEN can provide AlGaN/GaN HEMT heterostructure, like GaN on SiC HEMT wafer, for more wafer parameter please read: https://www.powerwaywafer.com/gan-wafer/gan-hemt-epitaxial-wafer.html. Based on the strong polarization-induced effect and the huge energy band shift, the interface of the III-nitride heterostructure can form a strong quantum localized high-concentration [...]
PAM XIAMEN offers 6″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 6″ 675 P/E 1-100 SEMI Prime, 1Flat (57.5mm) p-type Si:B [100] 6″ 800 E/E 1-50 SEMI, 1Flat (57.5mm), TTV<5μm p-type Si:B [100] 6″ 320 P/E 0.001-0.030 JEIDA Prime p-type Si:B [100] 6″ 675 P/P 0.001-0.005 SEMI Prime, 1Flat (57.5mm) p-type Si:B [100] 6″ 675 P/E 0.001-0.005 SEMI Prime, 1Flat (57.5mm) p-type Si:B [111-4.0°] ±0.5° 6″ 625 P/E 4-15 {7.1-8.8} SEMI Prime, 1 JEIDA Flat(47.5mm) p-type Si:B [111] ±0.5° 6″ 675 E/E 0.010-0.025 SEMI, 1Flat (57.5mm) n-type Si:P [100] 6″ 925 ±15 E/E 5-35 {12.5-29.7} JEIDA Prime, TTV<5μm n-type Si:P [100] 6″ 675 P/E 2.7-4.0 SEMI Prime n-type Si:P [100] 6″ 250 ±5 P/P 1-3 SEMI [...]
This paper reports the mechanical and electrical characteristics of Ge/Ge interfaces prepared by room-temperature surface-activated bonding (SAB). Bonded Ge/Ge wafer pairs with high bonding strength equivalent to that of the bulk material were achieved without any heat treatment. It was found that the bonding [...]
PAM XIAMEN offers Lithium Chip. Lithium Chip 16 mm Dia x 0.6 mm Thickness for Li-ion Battery R&D Lithium chip is widely used for Li-ion and Li metal rechargeable battery R&D. SPECIFICATIONS: Purity 99.9% Lithium Melting Point 180.5 °C Density 0.534 g/cm3 Color Silver Dimension 16 mm x 0.6 mm (diameter x [...]
