4″ LiNbO3 thin film on Silicon Wafer

4″ LiNbO3 thin film on Silicon Wafer

Lithium niobate (LiNbO3) wafer has excellent electro-optic, nonlinear and piezoelectric properties. With the advanced micro- and nanofabrication techniques, integrated photonics devices based on lithium niobate on insulator (LNOI) thin films have been extensively studied. In the future, high-performance LiNbO3 thin film prepared will support the further development of LNOI-based micro-nano optics, integrated photonics, and microwave photonics. The production of high-performance LNOI wafer will be an important part of the industrial application of lithium niobate optoelectronic devices. 4″ LiNbO3 thin film on Silicon Wafer (LNOI) with Y-cut and Z-cut can be provided by PAM-XIAMEN as follows:

LiNbO3 thin film

1. Specifications of Si-Based Single-Crystal LiNbO3 Thin Film

No.1:

LiNbO3/Silicon Wafer (PAM-P19446-LNOI)
Good Description: Lithium Niobate layer on Silicon Wafer with No Interlayer:LN thin film on Si Wafer
Top Layer: Lithium Niobate Single Crystal Thin Film, Y-cut, Thickness5μm
Substrate: 4″ Silicon Wafer, Thickness0.5mm
High Resistivity >10,000Ω*cm for silicon substrate
Surface Roughness<0.5nm
Thickness Uniformity< 2μm, offering 17 points testing when shipment

No.2:

Top layer LiNbO3 thin film Z-cut thickness 300nm Middle layer: (PAM-P20442-LNOI)
Thermal oxide, 2000 nm
Substrate: 4 inch Si wafer, high resistivity≥10,000Ω*cm for Si substrate currently

No.3:

Top layer LiNbO3 thin film Z-cut thickness 400nm Middle layer: (PAM-P20442-LNOI)
Thermal oxide, 2000 nm
Substrate: 4 inch Si wafer, high resistivity≥10,000Ω*cm for Si substrate currently

No.4:

Top layer LiNbO3 thin film Z-cut thickness 500nm Middle layer: (PAM-P20442-LNOI)
Thermal oxide, 2000 nm
Substrate: 4 inch Si wafer, high resistivity≥10,000Ω*cm for Si substrate currently

X-cut LNOI wafer also can be offered, more detailed parameters please consult at [email protected].

2. Property Comparison between LN and Si

Thin films of Lithium niobate are one of the most widely used optoelectronic materials with outstanding electro-optic properties. LiNbO3 thin film modulator is the backbone of modern optical fiber communication technology. And its transparent window range, optical loss, nonlinear performance, high-speed electro-optic modulation performance and LiNbO3 thin film piezoelectric performance have great advantages over silicon, refer to table 1:

Table 1 Performance Comparison Between LN and Si

Materials Bandgap & Transparent Window Refractive Index Electro-optic Coefficient (pm/V) Second-order:dij (pm/V) Waveguide Losses Piezoelectricity
Si 1.1 eV

1.1-5.5 um

3.5 Carrier plasma effect NA ~1 dB/cm NA
LN 4eV

0.35-5.5 um

2.2 r33=30.8(Pockels effect d33=25.2(@1.06um) ~0.027 dB/cm d15=74

 

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For more information, please contact us email at [email protected] and [email protected]

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