Lithium niobate (LiNbO3) wafer has excellent electro-optic, nonlinear and piezoelectric properties. With the advanced micro- and nanofabrication techniques, integrated photonics devices based on lithium niobate on insulator (LNOI) thin films have been extensively studied. In the future, high-performance LiNbO3 thin film prepared will support the further development of LNOI-based micro-nano optics, integrated photonics, and microwave photonics. The production of high-performance LNOI wafer will be an important part of the industrial application of lithium niobate optoelectronic devices. 4″ LiNbO3 thin film on Silicon Wafer (LNOI) with Y-cut and Z-cut can be provided by PAM-XIAMEN as follows:
1. Specifications of Si-Based Single-Crystal LiNbO3 Thin Film
No.1:
LiNbO3/Silicon Wafer (PAM-P19446-LNOI)
Good Description: Lithium Niobate layer on Silicon Wafer with No Interlayer：LN thin film on Si Wafer
Top Layer: Lithium Niobate Single Crystal Thin Film, Y-cut, Thickness5μm
Substrate: 4″ Silicon Wafer, Thickness0.5mm
High Resistivity >10,000Ω*cm for silicon substrate
Surface Roughness<0.5nm
Thickness Uniformity< 2μm, offering 17 points testing when shipment
No.2:
Top layer LiNbO3 thin film Z-cut thickness 300nm Middle layer: (PAM-P20442-LNOI)
Thermal oxide, 2000 nm
Substrate: 4 inch Si wafer, high resistivity≥10,000Ω*cm for Si substrate currently
No.3:
Top layer LiNbO3 thin film Z-cut thickness 400nm Middle layer: (PAM-P20442-LNOI)
Thermal oxide, 2000 nm
Substrate: 4 inch Si wafer, high resistivity≥10,000Ω*cm for Si substrate currently
No.4:
Top layer LiNbO3 thin film Z-cut thickness 500nm Middle layer: (PAM-P20442-LNOI)
Thermal oxide, 2000 nm
Substrate: 4 inch Si wafer, high resistivity≥10,000Ω*cm for Si substrate currently
X-cut LNOI wafer also can be offered, more detailed parameters please consult at [email protected].
2. Property Comparison between LN and Si
Thin films of Lithium niobate are one of the most widely used optoelectronic materials with outstanding electro-optic properties. LiNbO3 thin film modulator is the backbone of modern optical fiber communication technology. And its transparent window range, optical loss, nonlinear performance, high-speed electro-optic modulation performance and LiNbO3 thin film piezoelectric performance have great advantages over silicon, refer to table 1:
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Table 1 Performance Comparison Between LN and Si |
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| Materials | Bandgap & Transparent Window | Refractive Index | Electro-optic Coefficient (pm/V) | Second-order:dij (pm/V) | Waveguide Losses | Piezoelectricity |
| Si | 1.1 eV
1.1-5.5 um |
3.5 | Carrier plasma effect | NA | ~1 dB/cm | NA |
| LN | 4eV
0.35-5.5 um |
2.2 | r33=30.8(Pockels effect | d33=25.2(@1.06um) | ~0.027 dB/cm | d15=74 |
For more information, please contact us email at [email protected] and [email protected]