PAM XIAMEN offers 4″ LiNbO3 thin film on Silicon Wafer(LNOI)
No.1
LiNbO3/Silicon Wafer (PAM-P19446-LNOI)
Good Description:Lithium Niobate layer on Silicon Wafer with No Interlayer：LN thin film on Si Wafer
Top Layer: Lithium Niobate Single Crystal Thin Film, Y-cut, Thickness5μm
Substrate: 4″ Silicon Wafer, Thickness0.5mm
High Resistivity >10,000Ωcm for silicon substrate
Surface Roughness<0.5nm
Thickness Uniformity< 2μm, offering 17 points testing when shipment
No.2:
Top layer LiNbO3 thin film Z-cut thickness 300nmMiddle layer: (PAM-P20442-LNOI)
Thermal oxide, 2000 nm
Substrate: 4 inch Si wafer, high resistivity≥10,000Ωcm for Si substrate currently
No.3:
Top layer LiNbO3 thin film Z-cut thickness 400nmMiddle layer: (PAM-P20442-LNOI)
Thermal oxide, 2000 nm
Substrate: 4 inch Si wafer, high resistivity≥10,000Ωcm for Si substrate currently
No.4
Top layer LiNbO3 thin film Z-cut thickness 500nmMiddle layer: (PAM-P20442-LNOI)
Thermal oxide, 2000 nm
Substrate: 4 inch Si wafer, high resistivity≥10,000Ωcm for Si substrate currently
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com