Antireflection-Coated Blue GaN Laser Diodes in an External Cavity and Doppler-Free Indium Absorption Spectroscopy
Commercially available GaN-based laser diodes were antireflection coated in our laboratory and operated in an external cavity in a Littrow configuration. A total tuning range of typically 4 nm and an [...]
2013-04-01meta-author
PAM XIAMEN offers LiF Lithium Fluoride Crystal.
LiF crystal has excellent VUV region transmittance. It is used for windows, prisms, and lenses in the visible and infrared in 0.104 μm – 7 μm. LiF crystal is sensitive to thermal shock and would be attacked by [...]
2019-03-14meta-author
Suppression Of Gate Leakage Current In GaN MOS Devices By Passivation With Photo-grown Ga2O3
We report the use of photo-enhanced chemical (PEC) technique to form high-quality metal oxide semiconductor (MOS) devices made of gallium oxide (Ga2O3)/gallium nitride (GaN). Gate leakage current density as low as [...]
2012-12-07meta-author
The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is [...]
2020-02-11meta-author
PAM XIAMEN offers LiF crystal.
LiF (100) 10x10x1.0mm, 1SP
LiF (100) 10x10x1.0mm, 2SP
LiF (111) 10x10x1.0mm, 1SP
LiF (111) 10x10x1.0mm, 2SP
LiF (110) 10x10x1.0mm, 1SP
We also can offer LiF polycrystal (PAM161011-LIF):
Diameter=15mm
Length=25mm
Purity>99.99%
For more information, please contact us email at [email protected] and [email protected]
Found in [...]
2019-05-08meta-author
PAM XIAMEN offers Cleaving Silicon Wafer, which is cut by multi-wire cutting technology. Here is the cleaving silicon wafer specs:
Cleaving (100) silicon wafers
Cleaving (111) silicon wafers
Here comes a question: how to cleave a silicon wafer? At present, the silicon wafer cleaving technology mostly adopts the [...]
2019-02-22meta-author