GaN-On-Si Key Patent Analysis
The size of sapphire substrates is increasing to response to the current trend toward the low LED price, but it is actually hard to grow sapphire single crystals to a large size. For this reason, research on adopting silicon that has [...]
2012-12-19meta-author
PAM XIAMEN offers 2.5″ PBN Heater
2.5″ PBN Heater.
1. Resistance: 22-35 ohm
2. Voltage: 180 V
3. Current: 15 A
4. Power: 2000 W
For more information, send us email at [email protected] and [email protected]
2020-12-30meta-author
PAM XIAMEN offers 6″ FZ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime,
P/P 6″ {150.0±0.3mm}Ø×625±15µm,
FZ Intrinsic undoped Si:-[100]±0.5°,
Ro > 20,000 Ohmcm,
Both-sides-polished, One SEMI Flat (57.5mm),
Sealed in Empak or equivalent cassette.
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-07-02meta-author
Side view microphotograph of an electrode slice, depicting the structure of a nanowall/silicon/nanowall. Credit: Victor Krivchenko
Members of the D. V. Skobeltsyn Institute of Nuclear Physic and colleagues from the Faculty of Chemistry of the Lomonosov Moscow State University have developed a new silicon- and [...]
2017-09-18meta-author
PAM XIAMEN offers 4″FZ Silicon Ignot.
Silicon ingot, per SEMI, 100.7±0.3mmØ,
FZ n-type Si:P[111]±2.0°, Ro=(2,000-4,000)Ohmcm,
NO Flats.
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc,
MCC Lifetime>1,000µs
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected]erwaywafer.com and [email protected]
Found in 1990, Xiamen Powerway Advanced Material [...]
2019-07-05meta-author
GaN epitaxy template on Sapphire substrate with N-type, P-type or semi-insulating is available for the preparation of semiconductor optoelectronic devices and electronic devices. GaN epitaxial layer on sapphire substrate refers to a composite structure composed of a gallium nitride single crystal thin film material [...]
2019-04-22meta-author
