Since more and more mobile phone manufacturers launch the gallium nitride fast charger, what is a GaN fast charger? A gallium nitride charger is that the core device of such a fast charger for smartphones, laptops and etc. adopts GaN FETs chip, which can be offered by [...]
2021-06-11meta-author
PAM XIAMEN offers 2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns.
2 inch in diameter wafers
Monocrystalline silicon with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 microns,
Warping <35 microns
For more information, please visit our website: [...]
2019-07-01meta-author
Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields
We report that the nanorod light-emitting diodes (LEDs) with InGaN/GaN multi-quantum-wells (MQWs) emitted bright electroluminescence (EL) after they were positioned and aligned by non-uniform electric fields. Firstly, thin film LED structures with MQWs [...]
2013-03-19meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
Intrinsic Si:-
[100]
4″
500
P/E
FZ 13,000-20,000
SEMI Prime, TTV<5μm, Front-side Prime polish, Back-side light polish
Intrinsic Si:-
[100]
4″
615 ±10
C/C
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
4″
800
C/C
FZ >10,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
525
P/E
FZ >22,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
300
P/E
FZ 20,000-40,000
SEMI, TTV<5μm
Intrinsic Si:-
[111] ±0.5°
4″
450
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
500
P/E
FZ >20,000
SEMI Prime, Extra 3 free non-prime wafers included with 4 prime wafers
Intrinsic Si:-
[111] ±1.0°
4″
500
P/P
FZ >15,000
SEMI Prime, TTV<5μm
p-type Si:B
[110] ±0.25°
4″
525
P/E
5-10
SEMI [...]
2019-03-05meta-author
GaAs / AlGaAs / GaAs epi wafer in the diameter of 2” or 4” is available. This GaAs epitaxial wafer is applicable for semiconductor microwave devices and microwave monolithic integrated circuits. Here comes the typical structure of gallium arsenide epi wafer, please see below:
1. GaAs Wafer Epitaxial Structures
Structure 1:
2”GaAs/AlGaAs/GaAs epi wafer
S.No
Parameters
Specifications
1
GaAs substrate layer [...]
PAM XIAMEN offers NdCaAlO4 crystal.
Crystal
Structure /lattice constant
M.P. oC
Density g/cm3
Thermo-Expans
x10-6/K
Dielectric constant
Lattice Mismatch to YBCO
Max. Dia
NdCaAlO4
Tetrag.a=3.685 c=12.12
1850
5.56
12
19.5
0.055
CZ 35mm
NdCaAlO4 (001) 10x10x0.5 mm, 1 side polished
NdCaAlO4 (001) 10x10x0.5 mm, 2 sides polished
NdCaAlO4 (100) 10x10x0.5 mm, 1 side polished
For more information, please visit our [...]
2019-05-13meta-author