4″ Monocrystalline Silicon Wafer with Thermal oxide 20nm

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4″ Monocrystalline Silicon Wafer with Thermal oxide 20nm

PAM XIAMEN offers 4″ Monocrystalline Silicon Wafer with Thermal oxide 20nm

4inch diameter wafer made of monocrystalline silicon with isolation oxide
Diameter 101.6mm
Polishing: one-sided for microelectronics 
Type of conductivity and alloying: not specified 
Surface orientation:  not specified 
Primary and secondary flat orientation: not specified
Thickness: 675 microns±20 microns
Wedge (TTV): less than 15 microns
TTV<15μm
Distortion: less than 35 microns 
Thickness of the isolation oxide: at least 20 nm 
Front side: polished. 
Back side: lapped-etched

For more information, send us email at [email protected] and [email protected]

2021-03-17

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