PAM XIAMEN offers 4″ Monocrystalline silicon wafers with insulating oxide
4″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 ohm * cm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers silicon wafers that we have with a (211) orientation. Item Type/Dopant Orient. Dia. Thick (μm) Surf. Res Ωcm Comment PAM3037 n-type Si:Sb [211] ±0.5° 4″ 1,500 ±15 P/P 0.01-0.02 SEMI Test, 1Flat, Empak cst, Wafers can be polished for additional fee PAM3038 n-type Si:Sb [211] ±0.5° 4″ 1600 C/C 0.01-0.02 Prime, 1Flat, Empak cst PAM3039 n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ >50 Prime, 1Flat, Empak cst PAM3040 n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime, 1Flat, Empak [...]
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