PAM XIAMEN offers 4″ Monocrystalline silicon wafers with insulating oxide
4″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 ohm * cm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 6 SSP Boron P 100 57,5 ± 2,5 110 ± 0,20 0.0 ± 0.2 ° 1 – 10 Ohmcm 150.0 ± 0.2 mm 600 ± 5 µm 3 6 SSP Boron P 111 0,0 ± 0,0 110 ± 1 0.0 ± 0.2° 25 – [...]
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Plastically deformed Ge-crystal wafers that have the cylindrical shape with a large curvature were characterized by neutron diffraction. The box-type rocking curve of Bragg reflection with the angular width of Γbox≃2° in FWHM, which is observable in the monochromatic neutron diffraction, results in an enhancement in [...]
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Minor magnesium doping in P-type layer of InGaN/GaN MQW LED to enhance electrical and optical properties In this study, the LED samples were grown by metalorganic chemical vapor deposition (MOCVD) on 430 mum-thick c-plan sapphire substrates. The layer sequence consisted of a 25.0 nm GaN [...]
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