PAM XIAMEN offers 6″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:As
[100]
6″
675
OxP/EOx
0.001-0.005
SEMI TEST (spots & minor visual defects), 1Flat (57.5mm), Thermal Oxide 0.1μm±5% thick
p-type Si:B
[100]
6″
735
P/P
FZ >50
Prime, TTV<2μm
p-type Si:B
[100]
6″
650
P/P
FZ 8-13
SEMI Prime (57.5mm)
n-type Si:P
[100]
6″
475
P/P
FZ 60-75
SEMI Prime, MCC Lifetime>14,980μs, Lasermark
n-type Si:P
[112-5° towards[11-1]] ±0.5°
6″
800 ±10
P/P
FZ >3,000
SEMI, 1 JEIDA Flat (47.5mm), TTV<4μm, Lifetime>1,000μs
n-type Si:P
[112-5° towards[11-1]] ±0.5°
6″
950 ±10
P/P
FZ >3,000
SEMI, 1 JEIDA Flat (47.5mm), TTV<4μm, Lifetime>1,000μs
Intrinsic Si:-
[100]
6″
675
P/P
FZ >10,000
SEMI Prime (57.5mm)
Intrinsic Si:-
[100]
6″
675
P/P
FZ >10,000
SEMI [...]
2019-03-04meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
75 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
136 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.006-0.020
P/E
20
n- Si:P
300±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.006-0.020
P/E
21
n- Si:P
400±10%
N/N+
4″Øx525μm
n- Si:Sb[111]
0.005-0.020
P/E
22.5
n- Si:P
12.5±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
25
n- Si:P
0.08 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
25
n- Si:P
0.04 ±10%
N/N+
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
37.5
n- Si:P
270 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.006-0.020
P/E
37.5
n- Si:P
85±10%
N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
58
n- Si:P
60±10%
N/N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
15
n- Si:P
8±10%
N/N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
5
n- Si:P
3±10%
N/N/N/N+
4″Øx460μm
n- Si:Sb[111]
0.007-0.020
P/E
60
n- Si:P
40.5±4.5
N/N/N+
4″Øx460μm
n- Si:Sb[111]
0.007-0.020
P/E
20
n- Si:P
10±2
N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.005-0.020
P/E
60
n- Si:P
58.75 ±10%
N/N+
4″Øx525μm
n- Si:Sb[111]
0.005-0.020
P/E
60
n- [...]
2019-03-08meta-author
PAM XIAMEN offers MgO single crystal substrate.
MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in sizes up to [...]
2019-05-13meta-author
Helium implantation-induced layer splitting of InP in combination with direct wafer bonding was utilized to achieve low temperature layer transfer of InP onto Si(1 0 0) substrates. InP(1 0 0) wafers with 4 inch diameter were implanted by 100 keV helium ions with a dose of 5 × 1016 cm−2. Then [...]
2019-12-09meta-author
Banknotes, documents, branded products, and sensitive goods like pharmaceuticals or technical components are often marked to distinguish them from imitations. However, some counterfeiters have learned to copy conventional fluorescent tags. In the journal Angewandte Chemie, Chinese scientists have now introduced a new, exceptional anti-counterfeit ink [...]
2017-10-30meta-author
PAM XIAMEN offers MgO Magnesium Oxide Single Crystal.
High quality MgO magnesium oxide crystals are used are used widely for various thin film applications. Customized MgO crystal substrates are available upon request.
1.Specification of MgO Magnesium Oxide Single Crystal
Main Parameters
Growth Method
Special Arc Melting
Crystal Structure
Cubic
Unit cell constant
a = [...]
2019-03-14meta-author