PAM XIAMEN offers 4″ Monocrystalline silicon wafers with insulating oxide
4″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 ohm * cm
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers Zero Diffraction Si Wafer Diameter 32mm for XRD measurements Zero Diffraction Plate 32 mm Dia. x Thickness 2.0 mm Si Crystal for XRD sample with below specifications Resistivity>1Ωcm Size: 32 mm diameter x 2.0 mm thickness Surface: double side optical polished Zero diffraction plate is made of [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] 2″ 330 P/E 3-7 SEMI Prime n-type Si:P [111] 2″ 275 P/P 2.5-3.5 SEMI Prime n-type Si:P [111] 2″ 5000 P/E 2.0-3.1 Prime, NO Flats, Individual cst n-type Si:P [111] 2″ 5000 P/E 2-3 Prime, NO Flats, Individual cst n-type Si:P [111-8°] 2″ 280 P/E 1.3-1.8 SEMI Prime, n-type Si:P [111-3.5°] 2″ 280 P/E 1-30 SEMI Prime, n-type Si:P [111-2.5°] 2″ 500 C/C 1-20 SEMI Prime n-type Si:P [111] 2″ 7500 P/E 1-10 SEMI Prime, , Individual cst n-type Si:Sb [111-3°] 2″ 300 P/E ~0.02 SEMI Prime n-type Si:Sb [111-1° towards[112]] 2″ 500 P/E 0.017-0.026 SEMI Prime, n-type Si:Sb [111-2°] 2″ 200 P/E ~0.01 SEMI Prime, n-type Si:Sb [111] 2″ 280 P/E 0.01-0.02 SEMI Prime, n-type Si:Sb [111-2°] 2″ 280 P/E 0.008-0.020 SEMI Prime, n-type Si:As [111] 2″ 300 P/E 0.0030-0.0034 SEMI Prime, n-type Si:As [111] 2″ 300 P/E 0.001-0.005 SEMI Prime, n-type Si:As [111-4°] 2″ 350 P/E 0.001-0.005 SEMI [...]
PAM XIAMEN offers GaN on Sapphire for Power. 1.1 GaN HEMT Structure on Sapphire for Power Application Wafer size 2”, 3”, 4”, 6” AlGaN/GaN HEMT structure Refer 1.2 Carrier density 6E12~2E13 cm2 Hall mobility / XRD(102)FWHM ~arc.sec XRD(002)FWHM ~arc.sec Sheet Resistivity / AFM RMS (nm）of 5x5um2 <0.25nm Bow(um) <=35um Edge exclusion <2mm SiN passivation layer 0~30nm Al composition 20-30% In composition 17% for InAlN GaN cap / AlGaN/(In)AlN barrier / AlN interlayer / GaN channel / C [...]
SiC material has high displacement threshold energy and wide band gap, which enables the detector to work under high temperature and high radiation field. It can be applied to neutron fluence/energy spectrum measurement in strong radiation field, neutron fluence/energy spectrum measurement in high temperature [...]
Indium Arsenide (InAs) wafer can be provided by PAM-XIAMEN with a diameter up to 2 inch and a wide choice in off or exact orientation, high or low concentration and surface processed to optoelectronics industry. InAs wafer is an important III-V narrow band gap [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAs Epi wafer and other related products and services announced the new availability of size 2″-4” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, [...]
