PAM XIAMEN offers 4″ Monocrystalline silicon wafers with insulating oxide
4″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 ohm * cm
For more information, send us email at [email protected] and [email protected]
We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO4 laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was [...]
PAM XIAMEN offers 4″CZ Prime Silicon Wafer. 4″ Si substrate wafer Growth Method: CZ 100 +/- 0.5 mm diameter silicon Orientation <111> 4deg off P Type Boron doped 0.002 – 0.003 ohm cm Front side polished – Epi ready thickness 525 +/-25 um Back [...]
2018 TOP 100 US HIGHER EDUCATION R&D EXPENDITURES post by PAM-XIAMEN date: Jan 03,2020 University is an important research and development subject in the innovation system. In all 912 US universities, PAM-XIAMEN has compiled the ranking data and the name by source of funds to list top [...]
PAM XIAMEN offers Silicon Substrate. Below are just two items our clients use to work with 2D Materials. Si 150mm P/B <100> 0-100 ohm-cm 625um SSP Test Grade Si 100mm N/As <100> 0.001-0.005 ohm-cm 500um SSP Prime Grade For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] [...]
The electrical characteristics of GaN p–n junctions grown on freestanding GaN substrates by metal–organic chemical vapor deposition were investigated. The current–voltage (I–V) characteristics of the GaN p–n diode showed relatively low values and, little temperature dependence of the reverse leakage current. The breakdown voltage [...]
PAM XIAMEN offers 3″ FZ Silicon Ingot with Diameter 76mm Silicon ingot, per SEMI, G Ø76mm FZ n-type Si:P[100]±2.0° Ro=(1,500-7,000)Ohmcm, Ground Ingot, NO Flats, MCC Lifetime>1000µs, Oxygen<1E16/cc, Carbon<1E16/cc, Adequately packed, CofC: present. For more information, send us email at [email protected] and [email protected]
