4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm),
thickness = 100 ± 25 µm,
orientation (100)(+/-0.5°),
2-side polished,
p or n type (no matter) ,
resistivity ? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ 10um，warp ≤30um
One side sputtering Cr/Au Layer with the thickness 10nm/50nm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
A phenomenon of LT-GaAs photoconductive switch triggered by 800nm femtosecond laser The Ti oxide is used as insulator between the electrodes to substitute the air gap of photoconductive semiconductive switch (PCSS). The width of the oxide is smaller than 100nm, the electrodes and substrate’s materials [...]
PAM XIAMEN offers Indium Tin Oxide Coated Glass. MAIN PRODUCTS ITO coated glass ITO coated plastic film (PET, PEN, etc) Fluorine-tin-oxide FTO coated glass FPD and ITO glass detergents We have the following Indium Tin Oxide wafers. Please let us know if any interest you. Item Dia Thk Description PAM3343 25mm Sq 1.1mm 15-20 ohm/sq ITO glass Size: [...]
AlGaN template structure report A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by [...]
PAM XIAMEN offers Conductive Ceramic Substrates. 8% YSZ Ceramic Substrate 100x100x0.25 mm, fine ground 8% YSZ Ceramic Substrate 2″x 2″x0.5 mm, one side polished Conductive Ceramic Target (1″ Dx 0.3 mm t ) Conductive Ceramic Separator Sheets w/ optional size for Li-Air & Solid [...]
PAM XIAMEN offers 80+1mm FZ Si Ingot-4 FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] 2″ 275 P/P 2.5-3.5 SEMI Prime, n-type Si:P [111] 2″ 500 P/E 2.2-3.8 SEMI Prime, n-type Si:P [111] 2″ 300 P/E 1-10 SEMI Prime, , TTV<5μm n-type Si:P [111] 2″ 500 P/E 1-10 SEMI Prime, n-type Si:P [111] ±0.5° 2″ 6000 P/E 1-10 SEMI Prime, Individual cst n-type Si:Sb [111] ±0.5° 2″ 300 P/E 0.05-0.09 SEMI Prime, n-type Si:Sb [111-3.5°] ±0.5° 2″ 300 P/E 0.05-0.09 SEMI Prime, , in hard cassettes of 5 & 8 wafers n-type Si:Sb [111] 2″ 2900 P/P 0.013-0.015 Prime, NO Flats, Individual cst n-type Si:Sb [111-2.5°] ±0.5° 2″ 280 P/E 0.012-0.017 SEMI, n-type Si:As [111] ±0.5° 2″ 279 P/E 0.001-0.005 SEMI Prime p-type [...]
