The carrier concentration and thickness of n-type GaAs epitaxial layers were obtained by cell voltage measurements in anodization, and the results are compared with those obtained by differential C-V measurements. The carrier concentrations in the epi-layer are within the order of those obtained by [...]
2019-08-12meta-author
VCSEL Laser Wafer Chip
PAM-XIAMEN offer 850 nm,850nm and 940nm VCSEL(vertical-cavity surface-emitting laser) epitaxial wafer for the tele communication, gesture recognition,3D imaging and other applications, which is grown by MOCVD by with GaAs/AlGaAs multiple quantum wells (MQWs) as the active layer.
We have three items: VCSEL [...]
2020-04-23meta-author
PAM-XIAMEN offers low temperature grown InGaAs (LT-InGaAs) on GaAs Substrate for InGaAs Photo Conductive antenna substrate for THz, excitation wavelength will be 1030 nm. Low-temperature-grown In0.53Ga0.47As on GaAs is grown at low temperature using gaseous molecular beam epitaxy technology, and the effects of different growth temperatures and arsine pressures [...]
2020-09-16meta-author
PAM XIAMEN offers Mo-Coated Sodalime Glass Wafer. Here is a wafer list for your reference:
PAM210713-MO
Item
Length
Width
Thickness
Surface Finished
Mo-coating Sodalime Glass Wafer
100 mm
100 mm
1000 nm
Single side polished
Mo-coating Sodalime Glass Substrate
20 mm
15 mm
1000 nm
Single side polished
Mo-coating Sodalime Glass Sheet
25 mm
25 mm
1000 nm
Single side polished
Mo-coated Sodalime Glass Wafer
100 mm
100 [...]
2019-04-28meta-author
PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ).
PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation.
6″ Diameter Wafers [...]
2019-05-15meta-author
PAM XIAMEN offers 8″ CZ semiconductor grade silicon wafer SSP
Growth Method: CZ
Diameter: 200.0±0.5mm
Type/Dopant: P/Boron
Orientation: (111) ±0.5°
Resistivity: <1Ωcm
Notch: SEMI Standard
Thickness: 1,000 ±25um
TTV <6um
Bow <60um
Warp <60um
Frontside Surface: Polished
Backside Surface: Etched
Particle ≦10@≧0.3um
Moreover, 8″CZ Red P doped wafer (dopant Red Phos) with resistivity<0.0016Ωcm is available. (PAM180413)
For more information, [...]
2021-03-18meta-author