4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm),
thickness = 100 ± 25 µm,
orientation (100)(+/-0.5°),
2-side polished,
p or n type (no matter) ,
resistivity ? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ 10um，warp ≤30um
One side sputtering Cr/Au Layer with the thickness 10nm/50nm
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers Single crystal YVO4. YVO4 is an excellent birefringent crystal for fiber optics applications. As substrate, it can replace TiO2 for lower cost and better quality in many cases Crystal Birefr-ingence D=he-ho Refractive index h atl= 0.63m Thermooptical Coef.dh/dT106/K Structure lattice constant (A) Melting point oC Density g/cm3 Hard-ness (Moh) Thermal Coef. 10-6/K YVO4 0.222 ho=1.9929 he=2.2154 a: [...]
In recent years, gallium nitride (GaN) is widely used in high-frequency, high-power microwave, millimeter wave devices, etc., because it has excellent performance of large band gap, high thermal conductivity, high electron saturation drift speed, and easy formation of heterostructures. At the same time, various fields have [...]
Global and China GaAs-based Device Market Distinct from traditional silicon semiconductor, gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is an III-V semiconductor and is mainly used in handset RF front end like power amplifier (PA). In the 4G era, [...]
Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) offers the highest purity InGaAs / InP Epitaxial Wafer in the industry today. Sophisticated manufacturing processes have been put in place to customize and produce high quality InP (Indium Phosphide) Epitaxial wafers up to 4 inches with wavelengths from 1.7 to 2.6μm, [...]
PAM XIAMEN offers Yttrium Stabilized Zirconia (YSZ) Single Crystals Substrate. Main Parameters Crystal structure M3 Unit cell constant a=5.147 Å Melt point（℃） 2700 Density（g/cm3） 6 Hardness 8-8.5（mohs） Purity 99.99% Thermal expansion（/℃） 10.3×10-6 Dielectric constants ε=27 Growth method arcs Size 10×3，10×5，10×10，15×15，，20×15，20×20 dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm Thickness 0.5mm，1.0mm Polishing Single or double Crystal orientation <001>±0.5º redirection precision ±0.5° Redirection the edge: 2°（special in 1°） Angle of crystalline Special size and orientation are available upon [...]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:As [111-4°] ±0.5° 4″ 325 P/E 0.001-0.005 SEMI Prime, Back Surface: Sand blasted with LTO seal n-type Si:As [111-4°] ±0.5° 4″ 300 P/E 0.001-0.005 SEMI Prime, Back-side Sand-blasted with LTO seal, in Empak cassettes of 7 wafers n-type Si:As [111-2°] ±0.5° 4″ 400 P/EOx 0.001-0.004 {0.0018-0.0036} SEMI Prime, Epi edges, 0.5μm LTO n-type Si:As [111-4°] ±0.5° 4″ 525 P/E 0.001-0.005 SEMI Prime n-type Si:As [111-4°] 4″ 525 P/E 0.001-0.005 SEMI Prime n-type Si:As [111] ±0.5° 4″ 1000 P/E 0.001-0.005 {0.0031-0.0040} SEMI Prime, TTV<4μm, [...]
