4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm),
thickness = 100 ± 25 µm,
orientation (100)(+/-0.5°),
2-side polished,
p or n type (no matter) ,
resistivity ? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ 10um，warp ≤30um
One side sputtering Cr/Au Layer with the thickness 10nm/50nm
For more information, send us email at [email protected] and [email protected]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InGaP and other related products and services announced the new availability of size 3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are [...]
Ga2O3l-ß Crystal Substrate PAM XIAMEN offers Ga2O3l-ß Crystal Substrate. Ga2O3-ß Single Crystal Substrate, <010>+/-1° ori, 1″x0.35mm, 2SP, Research grade with “Twin” Substrate Specifications: Chmistry: ß-Ga2O3 Structure: [...]
PAM XIAMEN offers Plasma Etching Silicon Wafers. We have a large selection of silicon wafers for plasma etching. Many of our clients prefer our low cost mechanical grade silicon wafers for plasma etching. The popular with researchers is 100mm mechanical grade wafers. On client uses these mech grade wafers for [...]
A commercially viable GaN LED was an incredibly hard nut to crack that required the development of a buffer layer and a novel approach to p-type doping. But 20 years ago it all came together. Richard Stevenson looks back at the device’s birth. (more…)
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Optical interference effect of a thick absorbing LT-GaAs layer on a Bragg reflector Near-infrared reflectance spectra of 5 μm thick low-temperature (LT) GaAs films on GaAs/AlAs Bragg reflectors (BRs) have been studied by model calculations as a function of the linear absorption coefficient of the films αf. [...]
