Highlights
•GaSb p–i–n diodes were grown on Si and GaAs using interfacial misfit (IMF) arrays.
•Transmission electron microscopy images revealed arrays of 90° misfit dislocations.
•Threading dislocation densities of around View the MathML source were found in each case.
•Lower dark currents and higher quantum efficiency was found [...]
InAs heteroepitaxial layer grown on GaAs (100) substrate is very meaningful in the field of optoelectronics, especially in the field of infrared detectors and lasers. InAs has some potential characteristics, such as high electron mobility and narrow energy gap, and many metals can be [...]
2023-02-10meta-author
PAM XIAMEN offers MoTe2 crystal.
MoTe2 (Molybdenum Ditelluride) can crystallise in two dimensional sheets which can be thinned down to monolayers that are flexible and almost transparent. It is a semiconductor, and can fluoresce. It is part of a class of materials called transition [...]
2019-05-13meta-author
PAM XIAMEN offers 4″ Si wafer Thickness:500±20μm.
4″ Si wafer
4″ Si, N-type, <100>, SSP
resistivity3000-4000Ωcm
thickness500±20μm
carrier lifetime>1ms(1000μm)
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) [...]
2019-08-22meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111]
2″
1000
P/E
0.001-0.005
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
500
P/P
<0.01
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
500
P/P
<0.01 {0.00087-0.00100}
SEMI Prime
p-type Si:Ga
Poly.
2″
C/C
0.024-0.036
Gallium doped Concentrate (each with measured Gallium content)
n-type Si:P
[110]
2″
280
P/E
19-33
SEMI Prime, 1 Flat @ [1,-1,0], in hard cst
n-type Si:P
[110]
2″
280
P/E
19-33
SEMI Prime,
n-type Si:P
[110] ±0.5°
2″
300
P/E
1-5
SEMI Prime, , TTV<5μm
n-type Si:Sb
[110]
2″
375
P/E
0.005-0.020
SEMI
n-type Si:Sb
[110]
2″
375
P/E
0.005-0.020
SEMI
n-type Si:P
[100]
2″
400
P/P
210-880
SEMI Prime,
n-type Si:P
[100]
50mm
280
P/E
130-280
SEMI Prime,
n-type Si:P
[100]
2″
300
P/P
33-48
SEMI TEST [...]
2019-03-07meta-author
PAM XIAMEN offers 4″ FZ Intrinsic Silicon Wafer DSP
4″ FZ (100) intrinsic, DSP
wafer Si FZ (100)
dia 4’’ x 525µm
intrinsic
R > 20,000 ohm.cm
2 sides polished with SEMI Std flats
Roughness<0.5nm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-17meta-author