4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm),
thickness = 100 ± 25 µm,
orientation (100)(+/-0.5°),
2-side polished,
p or n type (no matter) ,
resistivity ? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ 10um，warp ≤30um
One side sputtering Cr/Au Layer with the thickness 10nm/50nm
For more information, send us email at [email protected] and [email protected]
We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate–drain region of the proposed AlGaN/GaN HEMT [...]
PAM XIAMEN offers 4″FZ Prime Silicon Wafer Thickness: 400µm +/-25µm. PRIME WAFERS SILICIUM FZ DIAMETER 4’’ (100mm+/-0.5mm) ORIENTATION <1-0-0> +/-1° THICKNESS : 400µm +/-25µm DSP TTV < 10µm – BOW < 40µm FLAT : 32.5mm TYPE P RESISTIVITY : 5000 – 10000 Ohm.cm WITH [...]
PAM XIAMEN offers GaAs (100) undoped crystal . GaAs, 10×5,10×10 GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10×3 x0.5 mm, 2SP GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10×5 x0.5 mm, 2SP GaAs (100) orientation, SI (semi-insulating), undoped 5x5x 0.5mm, 1sp, GaAs [...]
PAM XIAMEN offers6″ FZ Silicon Wafer-5 Silicon wafers, per SEMI Prime, P/E 6″Ø×875±25µm, FZ p-type Si:B[111]±0.5°, Ro > 10,000 Ohmcm, Warp<60μm, One-side-polished, Particles: ≤[email protected]≥0.3μm, MCL (Na, Al, K, Fe, Ni, Cu, Zn)<5E10/cm²,back-side etched, Tarnish, orange peel, contamination, haze, micro scratch, chips, edge chips, crack, crow feet, pin hole, pits, dent, waviness, smudge&scar on [...]
PAM XIAMEN offers DyScO3/GdScO3//TbScO3 crystal. Crystal Structure /Lattice Constant(A) MP oC Density, g/cm3 Growth Tech DyScO3 Orthorombic a=5.44 b=5.71 c=7.89 2127 6.9 CZ GdScO3 Orthorombic a=5.45 b=5.75 c=7.93 2127 6.6 CZ TbScO3 Orthorhombic, a = 5.4543, b = 5.7233 c = 7.9147 2127 6.6 CZ DyScO3 (110) 5x5x0.5mm 1sp (PAM210322-DYSCO3) DyScO3 (110) 5x5x0.5mm 1sp” DyScO3 (110) 5x5x0.5mm 2sp DyScO3 (110) 10x10x0.5mm 1sp DyScO3 (110) 10x10x0.5mm 2sp DyScO3 (001) 10x10x0.5mm 1sp [...]
PAM XIAMEN offers KBr Potassium Bromide Crystal Substrate. To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote. Main parameters Crystal structure M3 Growth method crystallization process Crystal lattice parameters a=5.596Å Density 2.75（g/cm3） Index of refraction 1.49025 Surface roughness < 5 [...]
