4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm),
thickness = 100 ± 25 µm,
orientation (100)(+/-0.5°),
2-side polished,
p or n type (no matter) ,
resistivity ? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ 10um，warp ≤30um
One side sputtering Cr/Au Layer with the thickness 10nm/50nm
For more information, send us email at [email protected] and [email protected]
The photoluminescent germanium nanocrystals (Ge-NCs) were successfully incorporated into electrospun polymeric nanofiber matrix in order to develop photoluminescent nanofibrous composite web. In the first step, the synthesis of Ge-NCs was achieved by nanosecond pulsed laser ablation of bulk germanium wafer immersed in organic liquid. The size, [...]
Effects of mosaic structure on the physical properties of CdZnTe crystals Mosaic structure in CdZnTe crystals was identified by using scanning electron microscopy (SEM), then the effects of mosaic structure on the physical properties were studied by means of high resolution X-ray diffraction (HRXRD), I–V characterization, and [...]
PAM XIAMEN offers 4″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 100 P Boron CZ -111 1-20 450-500 P/P PRIME 100 P Boron CZ -111 1-20 500-550 P/E PRIME 100 P Boron CZ -110 1-20 450-500 P/P PRIME 100 P Boron CZ -110 1-20 500-550 P/E PRIME 100 Any Any CZ Any Any 350-600 P/E TEST 100 Undoped VGF -100 >1E7 500-600 P/P 100 Undoped VGF -100 >1E7 500-600 P/P 100 N Si VGF -100 600-650 P/E PRIME 100 P Zn VGF (100) off 2 deg twd <110> 0.01 375-425 P/E epi 100 P Zn VGF -100 600-650 P/E PRIME 100 Si Undoped VGF -100 >1E7 600-650 P/E PRIME 100 Si Undoped VGF -100 10000000 610-660 P/P EPI 100 Undoped CZ -100 >30 450-500 P/P EPI 100 Undoped CZ -100 >30 500-550 P/E EPI 100 N Sb CZ (100)-9 <.4 150-200 P/E EPI 100 N Sb CZ -100 .005-.02 450-500 P/P EPI 100 N Sb CZ -100 .005-.02 500-550 P/E EPI 100 P Ga CZ -100 .01-.04 450-500 P/P EPI 100 P Ga CZ -100 .01-.04 500-550 P/E EPI 100 N Si VGF -100 600-650 P/E PRIME 100 Si Fe VGF -100 5000000 600-650 P/E PRIME 100 Single Wafer Shipper ePak Holds1Wafer PRIME 100 Shipping Cassette ePak Holds25Wafers Clean Room 101.6 N Phos CZ -100 1-20 300-350 P/P 101.6 N Phos CZ -100 1-20 350-400 P/E 101.6 P Boron CZ -100 1-20 300-350 P/P 101.6 P Boron CZ -100 1-20 350-400 P/E For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material [...]
PAM XIAMEN offers TeO2 Tellurium Dioxide Crystals. Tellurium Dioxide, TeO2 is an excellent ascousto-optic (AO) crystal with high AO figure of merit, birefringence, good optical rotation and slow propagation velocity along [110] direction. The resolution of AO devices made of TeO2 crystals will increase several [...]
The ability to grow thin GaN layers on Si substrates has led to the development of lateral high power and high-speed devices such as GaN HEMTs. These devices have already demonstrated promising performance and have been adopted for mass market. But lateral devices require [...]
Bulk GaN cost to fall 60% to $730 for 2″ substrate by 2020 Wide-bandgap semiconductor materials such as gallium nitride (GaN) offer far higher performance than traditional silicon but cost significantly more. However, by 2020 GaN costs will drop enough for it to become competitive [...]
