4″ Prime EPI Wafer

PAM XIAMEN offers 4″ Prime EPI Wafer.

Substrate:
1. Growth Method CZ
2. Diameter100+/-0.5mm
3. Type-Dopant, P- Boron
4. Resistivity 0.002 – 0.003 ohm-cm
5. Resistivity Radial Variation<10 %
6. Crystal Orientation<111> 4+/- 0.5degree
7. Primary Flat: Orientation Semi degree, Length Semi mm
8. Secondary Flat: Orientation Semi degree, Length semi mm
9. Thickness525 +/- 25μm
10. TTV≦10μm
11. Bow≦40 μm
12. Warp≦40 μm
13. Front Surface polished – Epi ready
14. Backside etched
15. Surface Appearance no Cratches, haze, edge chips, orange peel, defects,contamination
16. Edge Profile Edge Rounding
17. Particle (>0.3μm) N/A ea/wf
Epi Layer 1: N type Phosphorous Doped, Resistivity3.8 – 5.2ohm cm, Thickness29.0 – 35.0um
Epi Layer 2: N type Phosphorous Doped, Resistivity0.004-0.0044ohm cm, Thickness36.0 – 44.0um

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

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