4″ Prime Silicon Wafer Thickness 675 +/- 20 microns

4″ Prime Silicon Wafer Thickness 675 +/- 20 microns

PAM XIAMEN offers 4″ Prime Silicon Wafer Thickness 675 +/- 20 microns.

Wafers 4 inches in a diameter of monocrystalline silicon with an insulating oxide.
100 mm in diameter
The silicon substrate
The insulating thermal oxidation film thickness 300nm
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 microns

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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