PAM XIAMEN offers 4″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
100
N
Phos
CZ
-100
1-20
500-550
P/E/WTOx
100
N
Phos
CZ
-100
1-50
2900-3100
P/E
PRIME
100
N
Phos
CZ
-100
50-70
4850-5050
P/E
PRIME
100
N
Phos
CZ
-100
1-50
5900-6100
P/E
PRIME
100
N
Phos
CZ
-100
>10
9900-10100
P/P
PRIME
100
N
Phos
CZ
-111
1-10
4000-6000
P/E
PRIME
100
N
Phos
FZ
-111
> 20000
275-325
P/E
PRIME
100
N
Phos
FZ
-111
> 20000
275-325
P/P
PRIME
100
N
Phos
FZ
-111
2000-4000
275-325
P/P
PRIME
100
N
Phos
CZ
-111
450-500
P/P
PRIME
100
N
Phos
FZ
-111
> 20000
475-525
P/P
PRIME
100
N
As
CZ
-111
.001-.005
500-550
P/E
PRIME
100
N
Phos
CZ
-111
1-20
500-550
P/E
PRIME
100
N
Phos
FZ
-111
2000-4000
500-550
P/P
PRIME
100
N
Phos
CZ
-111
1-20
4800-5200
P/E
PRIME
100
N
Phos
CZ
-111
1-3
11300-11500
P/E
PRIME
100
N
Phos
CZ
-110
450-500
P/P
PRIME
100
N
Phos
CZ
-110
1-20
500-550
P/E
PRIME
100
P
Boron
CZ
(100)-4
0.01-0.02
175-225
P/P
PRIME
100
P
Boron
CZ
(100)-4
0.01-0.02
200-250
P/E
PRIME
100
P
Boron
CZ
(100)-4
0.01-0.02
325-375
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth [...]
2019-03-04meta-author
PAM XIAMEN offers KTaO3 Potassium Tantalate Crystal Substrates.
Formula
KTaO3
Point group
m3m
Cell parameters
0.3984nm
Melting point
1352.2 ℃
Density
7.025 g/cm3
Mohs hardness
6
Growth method
Czochralski method
Refractive index
2.226@633nm, 2.152@1539nm
Coefficient of thermal expansion
4.027 x 10-6/K
Specific heat (temperature J/(K g)
0.378
Transparent bands (nm)
380~4000
Crystal orientation
<100>, <110>, <111>
Regular size
20x20x0.5mm, 10x10x0.5mm, 5x5x0.5mm, other sizes are available upon request
For more information, please visit our website: [...]
2019-03-12meta-author
PAM XIAMEN offers Ce:Lu2SiO5 substrate.
Ce:Lu2SiO5 substrate (001 ) 10x10x0.5 mm, 1sp
Substrate Specifications
Crystal: Ce: Lu2SiO5
Ce dopant 0.175 mol %
Size: 10x10x0.5 mm
Orientation: (001 ) +/-0.5 0
Polish: One side optical polished.
Pack: Packed in 1000 class plastic bag [...]
2019-04-17meta-author
PAM XIAMEN offers 200mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Below are just some of our recent 200mm silicon wafer sale specials.
8″ silicon wafer
Dia.: 200+/-0.5mm
Type: P
Ori.: <100>
Res.: 1000-3000 ohm.cm
Thk.: 705-745um
V-notch
Surface: Polished/Etched
MFG: MEMC
200mm Silicon from PAM XIAMEN
200mm N/Ph [...]
2019-02-20meta-author
PAM XIAMEN offers 6″ FZ Silicon Wafer
Silicon wafers, per SEMI Prime, P/E 6″Ø×875±25µm,
FZ p-type Si:B[111]±0.5°, Ro > 10,000 Ohmcm,
Warp<60μm,
One-side-polished, Particles: ≤10@≥0.3μm,
MCL (Na, Al, K, Fe, Ni, Cu, Zn)<5E10/cm²,back-side etched,
Tarnish, orange peel, contamination, haze,
micro scratch, chips, edge chips, crack,
crow feet, pin hole, pits, dent, waviness,
smudge&scar on [...]
2019-09-03meta-author
HEMTs evolved from Field Effect Transistors (FETs) are suitable for manufacturing monolithic microwave integrated circuits (MMICs).
HEMTs were initially generated to obtain high electron mobility in semiconductor devices at room temperature. The electron mobility of FETs is limited even with high doping levels, so high [...]
2022-07-25meta-author