**PAM XIAMEN offers 4″ Silicon Wafer.**

Material | Orient. | Diam. | Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |

p-type Si:B | [111] ±0.5° | 4″ | 1000 | P/E | <0.01 | SEMI Prime |

n-type Si:P | [110] ±0.5° | 4″ | 525 | P/P | 20-80 | SEMI Prime @ [111] – Secondary 70.5° CW from Primary |

n-type Si:P | [110] ±0.5° | 4″ | 500 | P/P | 3-10 | SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 7 wafers |

n-type Si:P | [110] ±0.3° | 4″ | 525 | P/P | 3-10 | SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary |

n-type Si:P | [110] ±0.3° | 4″ | 525 | P/P | 3-10 | SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary |

n-type Si:P | [110] ±0.3° | 4″ | 525 | P/P | 3-10 | SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 6 & 7 wafers |

n-type Si:P | [110] ±0.5° | 4″ | 525 | P/E | 3-9 | SEMI Prime, TTV<5μm |

n-type Si:P | [110] ±0.2° | 4″ | 525 | P/E | 3-10 | SEMI Prime, Primary Flat @ <111>±0.2°, SF @ <111> 70.5° CW from PF, TTV<4μm Bow<15μm, Warp<30μm |

n-type Si:Sb | [110] ±0.5° | 4″ | 525 | P/P | 0.01-0.02 {0.0176-0.0180} | Prime @ [111] – Secondary 70.5° CW from Primary |

n-type Si:As | [110] ±0.5° | 4″ | 275 | P/P | 0.001-0.005 | SEMI TEST (Haze and scratches, TTV<15μm), Primary Flat at [111]±0.5°, |

Secondary at 70.5°±5° CW from Primary | ||||||

n-type Si:As | [110] ±0.5° | 4″ | 275 ±10 | P/P | 0.001-0.005 | SEMI Prime @ [111] – Secondary 70.5° CW from Primary, TTV<5μm |

n-type Si:As | [110] ±0.5° | 4″ | 275 ±10 | P/P | 0.001-0.005 | SEMI Prime at [111] 70.5° apart, TTV<5μm |

n-type Si:As | [110] ±0.5° | 4″ | 400 | E/E | 0.001-0.005 | SEMI @ [111] – Secondary 70.5° CW from Primary |

n-type Si:As | [110] ±0.5° | 4″ | 525 | P/E | 0.001-0.005 | SEMI Prime |

n-type Si:P | [100] | 4″ | 525 | P/E | 22-33 | SEMI Prime, TTV<5μm |

n-type Si:P | [100] | 4″ | 310 ±10 | P/P | 20-30 | SEMI Test, Unsealed, Polished but dirty. Can be made prime for additional fee |

n-type Si:P | [100] | 4″ | 350 | P/P | 20-23 | SEMI Prime, 14 wafes with 2 flats, 7 with 1 flat |

n-type Si:P | [100] | 4″ | 700 | P/E | 14-18 | Prime, NO Flats |

n-type Si:P | [100] | 4″ | 525 | P/E | 10-30 | SEMI, in Empak cassettes of 7 & 7 wafers |

n-type Si:P | [100-4° towards[111]] | 4″ | 525 | P/E | 9-11 | SEMI Prime |

For more information, please visit our website: https://www.powerwaywafer.com,

send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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