**PAM XIAMEN offers 4″ Silicon Wafer.**

Material | Orient. | Diam. | Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |

p-type Si:B | [100-6°] | 4″ | 525 | P/E | 1-100 | SEMI Prime |

p-type Si:B | [100] | 4″ | 350 | P/E | 0.08-0.12 | SEMI Prime, TTV<5μm |

p-type Si:B | [100-4°] ±0.5° | 4″ | 381 | P/E | 0.01-0.02 | SEMI Prime |

p-type Si:B | [100] | 4″ | 800 | P/EP | 0.01-0.02 | SEMI Prime |

p-type Si:B | [100] | 4″ | 3100 | P/P | CZ 0.006-0.009 | SEMI Prime, Individual cst |

p-type Si:B | [100-6°] | 4″ | 525 | P/E | 0.0042-0.0047 | SEMI Prime |

p-type Si:B | [100] | 4″ | 150 ±15 | P/P | 0.001-0.005 | SEMI Prime, TTV<2μm |

p-type Si:B | [111-3°] | 4″ | 300 | P/E | 3-4 | SEMI Prime |

p-type Si:B | [111-3°] | 4″ | 400 | P/E | 0.015-0.018 | SEMI Prime |

p-type Si:B | [111] | 4″ | 525 | P/E | 0.005-0.006 | SEMI Prime |

p-type Si:B | [111-1.5°] | 4″ | 525 | P/E | 0.002-0.004 | SEMI Prime |

p-type Si:B | [111] | 4″ | 300 | P/E | 0.001-0.005 | SEMI Prime |

n-type Si:P | [110] ±0.5° | 4″ | 525 | P/P | 20-80 | SEMI Prime @ [111] – Secondary 70.5° CW from Primary |

n-type Si:P | [110] | 4″ | 1000 | P/E | 12-15 | |

n-type Si:P | [100] | 4″ | 400 | P/E | 32-70 | SEMI Prime |

n-type Si:P | [100] | 4″ | 400 | P/P | 17-19 | Prime, NO Flats |

n-type Si:P | [100] | 4″ | 250 | P/E | 11-13 | SEMI Prime |

n-type Si:P | [100] | 4″ | 525 | P/E | 5-10 | SEMI Prime |

n-type Si:P | [100] | 4″ | 259 | P/P | 3-5 | SEMI Prime |

n-type Si:P | [100] | 4″ | 300 | P/P | 1-35 | SEMI Prime, TTV<5μm, with Lasermark |

n-type Si:P | [100] | 4″ | 475 | P/P | 1-100 | SEMI Prime, TTV<2μm |

For more information, please visit our website: https://www.powerwaywafer.com,

send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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