4″ Silicon Wafer-16

PAM XIAMEN offers 4″ Silicon Wafer.

Material	Orient.	Diam.	Thck (μm)	Surf.	Resistivity Ωcm	Comment
p-type Si:B	[100-6°]	4″	525	P/E	1-100	SEMI Prime
p-type Si:B	[100]	4″	350	P/E	0.08-0.12	SEMI Prime, TTV<5μm
p-type Si:B	[100-4°] ±0.5°	4″	381	P/E	0.01-0.02	SEMI Prime
p-type Si:B	[100]	4″	800	P/EP	0.01-0.02	SEMI Prime
p-type Si:B	[100]	4″	3100	P/P	CZ 0.006-0.009	SEMI Prime, Individual cst
p-type Si:B	[100-6°]	4″	525	P/E	0.0042-0.0047	SEMI Prime
p-type Si:B	[100]	4″	150 ±15	P/P	0.001-0.005	SEMI Prime, TTV<2μm
p-type Si:B	[111-3°]	4″	300	P/E	3-4	SEMI Prime
p-type Si:B	[111-3°]	4″	400	P/E	0.015-0.018	SEMI Prime
p-type Si:B	[111]	4″	525	P/E	0.005-0.006	SEMI Prime
p-type Si:B	[111-1.5°]	4″	525	P/E	0.002-0.004	SEMI Prime
p-type Si:B	[111]	4″	300	P/E	0.001-0.005	SEMI Prime
n-type Si:P	[110] ±0.5°	4″	525	P/P	20-80	SEMI Prime @ [111] – Secondary 70.5° CW from Primary
n-type Si:P	[110]	4″	1000	P/E	12-15
n-type Si:P	[100]	4″	400	P/E	32-70	SEMI Prime
n-type Si:P	[100]	4″	400	P/P	17-19	Prime, NO Flats
n-type Si:P	[100]	4″	250	P/E	11-13	SEMI Prime
n-type Si:P	[100]	4″	525	P/E	5-10	SEMI Prime
n-type Si:P	[100]	4″	259	P/P	3-5	SEMI Prime
n-type Si:P	[100]	4″	300	P/P	1-35	SEMI Prime, TTV<5μm, with Lasermark
n-type Si:P	[100]	4″	475	P/P	1-100	SEMI Prime, TTV<2μm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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2019-03-06

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sales@powerwaywafer.com tech@powerwaywafer.com

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PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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