PAM XIAMEN offers 4″ Silicon Wafer.
Material | Orient. | Diam. | Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |
n-type Si:P | [111] | 4″ | 1000 | P/E | 1-10 | SEMI Prime |
n-type Si:Sb | [111-4°] | 4″ | 450 | P/E | 0.025-0.045 | SEMI Prime |
n-type Si:Sb | [111-2.5°] | 4″ | 625 | P/E | 0.021-0.023 | SEMI Prime |
n-type Si:Sb | [111] | 4″ | 525 | P/E | 0.016-0.020 | SEMI Prime |
n-type Si:Sb | [111-4°] | 4″ | 525 | P/E | 0.010-0.020 | SEMI Prime |
n-type Si:Sb | [111-2°] | 4″ | 380 | P/E | 0.008-0.018 | SEMI Prime |
n-type Si:Sb | [111-3°] | 4″ | 400 | P/E | 0.008-0.018 | SEMI Prime |
n-type Si:Sb | [111-3°] | 4″ | 400 | P/E | 0.005-0.018 | SEMI Prime |
n-type Si:As | [111-3°] | 4″ | 400 | P/E | 0.001-0.005 | SEMI Prime |
n-type Si:As | [111-3°] | 4″ | 400 | P/E | 0.001-0.005 | SEMI Prime |
n-type Si:As | [111-4°] | 4″ | 525 | P/E | 0.001-0.005 | SEMI Prime |
n-type Si:As | [111-4°] | 4″ | 525 | P/E | 0.001-0.005 | SEMI Prime |
n-type Si:As | [111-2.5°] | 4″ | 525 | P/E | 0.001-0.005 | SEMI Prime |
n-type Si:As | [111-3°] | 4″ | 525 | P/E | 0.001-0.005 | SEMI Prime |
Intrinsic Si:- | [100] | 4″ | 525 | P/E | 400-1,000 | SEMI Prime |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.