4″ Silicon Wafer-18

PAM XIAMEN offers 4″ Silicon Wafer.

Material Orient. Diam. Thck
(μm)
Surf. Resistivity
Ωcm
Comment
n-type Si:P [111] 4″ 1000 P/E 1-10 SEMI Prime
n-type Si:Sb [111-4°] 4″ 450 P/E 0.025-0.045 SEMI Prime
n-type Si:Sb [111-2.5°] 4″ 625 P/E 0.021-0.023 SEMI Prime
n-type Si:Sb [111] 4″ 525 P/E 0.016-0.020 SEMI Prime
n-type Si:Sb [111-4°] 4″ 525 P/E 0.010-0.020 SEMI Prime
n-type Si:Sb [111-2°] 4″ 380 P/E 0.008-0.018 SEMI Prime
n-type Si:Sb [111-3°] 4″ 400 P/E 0.008-0.018 SEMI Prime
n-type Si:Sb [111-3°] 4″ 400 P/E 0.005-0.018 SEMI Prime
n-type Si:As [111-3°] 4″ 400 P/E 0.001-0.005 SEMI Prime
n-type Si:As [111-3°] 4″ 400 P/E 0.001-0.005 SEMI Prime
n-type Si:As [111-4°] 4″ 525 P/E 0.001-0.005 SEMI Prime
n-type Si:As [111-4°] 4″ 525 P/E 0.001-0.005 SEMI Prime
n-type Si:As [111-2.5°] 4″ 525 P/E 0.001-0.005 SEMI Prime
n-type Si:As [111-3°] 4″ 525 P/E 0.001-0.005 SEMI Prime
Intrinsic Si:- [100] 4″ 525 P/E 400-1,000 SEMI Prime

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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