4″ Silicon Wafer-2

PAM XIAMEN offers 4″ Silicon Wafer.

Diameter Type Dopant Growth
method
Orientation Resistivity  Thickness Surface Grade
100 N Phos CZ -100 1-20 500-550 P/E/WTOx
100 N Phos CZ -100 1-50 2900-3100 P/E PRIME
100 N Phos CZ -100 50-70 4850-5050 P/E PRIME
100 N Phos CZ -100 1-50 5900-6100 P/E PRIME
100 N Phos CZ -100 >10 9900-10100 P/P PRIME
100 N Phos CZ -111 1-10 4000-6000 P/E PRIME
100 N Phos FZ -111 > 20000 275-325 P/E PRIME
100 N Phos FZ -111 > 20000 275-325 P/P PRIME
100 N Phos FZ -111 2000-4000 275-325 P/P PRIME
100 N Phos CZ -111 450-500 P/P PRIME
100 N Phos FZ -111 > 20000 475-525 P/P PRIME
100 N As CZ -111 .001-.005 500-550 P/E PRIME
100 N Phos CZ -111 1-20 500-550 P/E PRIME
100 N Phos FZ -111 2000-4000 500-550 P/P PRIME
100 N Phos CZ -111 1-20 4800-5200 P/E PRIME
100 N Phos CZ -111 1-3 11300-11500 P/E PRIME
100 N Phos CZ -110 450-500 P/P PRIME
100 N Phos CZ -110 1-20 500-550 P/E PRIME
100 P Boron CZ (100)-4 0.01-0.02 175-225 P/P PRIME
100 P Boron CZ (100)-4 0.01-0.02 200-250 P/E PRIME
100 P Boron CZ (100)-4 0.01-0.02 325-375 P/P PRIME

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

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