4″ Silicon Wafer-3
PAM XIAMEN offers 4″ Silicon Wafer.
| Material | Orient. | Diam. | Thck (μm) | Surf. | Resistivity Ωcm | Comment |
| n-type Si:P | [111] ±0.5° | 4″ | 630 | P/G | FZ >7,000 | SEMI Prime, Lifetime>1,000μs, Back-side Fine Ground |
| n-type Si:P | [111] ±0.5° | 4″ | 675 | P/E | FZ >7,000 | SEMI, Lifetime>1,600μs,settes of 6 and 8 wafers |
| n-type Si:P | [111] ±0.5° | 4″ | 675 | P/E | FZ >7,000 | SEMI, Lifetime>1,600μs |
| n-type Si:P | [111] ±0.5° | 4″ | 675 | P/E | FZ >7,000 | SEMI TEST (Scratches, Lifetime>1,600μs |
| n-type Si:P | [111] ±0.25° | 4″ | 675 | P/E | FZ 7,000-10,000 | SEMI Prime, Lifetime>1,000μs, Light scratches |
| n-type Si:P | [111] ±0.5° | 4″ | 525 | P/E | FZ >5,000 | SEMI Prime, Lifetime>1,000μs |
| n-type Si:P | [111-1° towards[110]] ±0.5° | 4″ | 525 | P/E | FZ >5,000 | SEMI TEST (scratches on back-side) |
| n-type Si:P | [111] ±0.25° | 4″ | 675 | P/E | FZ 5,000-7,000 | SEMI Prime, Lifetime>1,000μs |
| n-type Si:P | [111] ±0.25° | 4″ | 675 | P/E | FZ 5,000-7,000 | SEMI TEST (light scratches), Lifetime>1,000μs |
| n-type Si:P | [111] ±0.5° | 4″ | 525 | P/P | FZ >3,000 | SEMI Prime (32.5mm) |
| n-type Si:P | [111] ±0.5° | 4″ | 525 | P/P | FZ >3,000 | SEMI Prime, Lifetime>1,000μs,settes of 5, & 10 wafers |
| n-type Si:P | [111] ±0.25° | 4″ | 525 | P/E | FZ 3,000-5,000 | SEMI Prime,settes of 3, 3 & 4 wafers |
| n-type Si:P | [111] ±0.25° | 4″ | 525 | P/E | FZ 3,000-5,000 | SEMI TEST (light scratches) |
| n-type Si:P | [111] ±0.5° | 4″ | 290 ±10 | P/P | FZ 2,500-3,500 | SEMI TEST (Surface defects) |
| n-type Si:P | [111] ±1° | 4″ | 380 | P/E | FZ 2,000-3,000 | SEMI Prime, TTV<5μm, Lifetime>1,000μs, settes of 6 wafers |
| n-type Si:P | [111] ±0.5° | 4″ | 525 | P/E | FZ 1,500-3,000 | SEMI Prime, Lifetime>1,100μs |
| n-type Si:P | [111] ±0.5° | 4″ | 525 | P/E | FZ 430-550 | SEMI Prime, TTV<7μm |
| n-type Si:P | [111] ±0.5° | 4″ | 525 | P/E | FZ 430-550 | SEMI Prime, TTV<7μm |
| n-type Si:P | [111] ±0.5° | 4″ | 500 ±13 | E/E | FZ 6.03-7.37 | SEMI |
| n-type Si:P | [112-3° towards[11-1]] ±0.5° | 4″ | 762 | P/P | FZ >100 | SEMI Prime |
| n-type Si:P | [112-5° towards[11-1]] ±0.5° | 4″ | 762 | P/P | FZ ~100 | SEMI Prime, TTV<3μm |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.