4″ Silicon Wafer-3

PAM XIAMEN offers 4″ Silicon Wafer.

Diameter Type Dopant Growth
method
Orientation Resistivity  Thickness Surface Grade
100 P Boron CZ -100 1-20 43768 P/P PRIME
100 P Boron CZ -100 1-20 40-60 P/P PRIME
100 P Boron CZ -100 1-20 80-100 P/P PRIME
100 P Boron CZ -100 1-20 180-200 P/P PRIME
100 P Boron CZ -100 1-20 300-350 P/E PRIME
100 P Boron CZ -100 1-20 300-350 P/P PRIME
100 P Boron CZ -100 1-20 350-400 P/P PRIME
100 P Boron CZ -100 1-20 375-425 P/E PRIME
100 P Boron CZ -100 .001-.005 450-500 P/P PRIME
100 P Boron CZ -100 .005-.02 450-500 P/P PRIME
100 P Boron FZ -100 >3000 450-500 P/P PRIME
100 P Boron CZ -100 1-20 450-500 P/P PRIME
100 P Boron CZ -100 .001-.005 500-550 P/E PRIME
100 P Boron CZ -100 .005-.02 500-550 P/E PRIME
100 P Boron FZ -100 >3000 500-550 P/E PRIME
100 P Boron CZ -100 1-20 500-550 P/E PRIME
100 P Boron CZ -100 1-20 500-550 P/E/DTOx PRIME
100 P Boron CZ -100 1-20 500-550 P/E/Ni PRIME
100 P Boron CZ -100 1-20 500-550 P/E/WTOx
100 P Boron CZ -100 1-20 950-1050 P/E PRIME
100 P Boron CZ -100 1-20 950-1050 P/P PRIME

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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