4″ Silicon Wafer-3

4″ Silicon Wafer-3

PAM XIAMEN offers 4″ Silicon Wafer.

DiameterTypeDopantGrowth
method
OrientationResistivity ThicknessSurfaceGrade
100PBoronCZ-1001-2043768P/PPRIME
100PBoronCZ-1001-2040-60P/PPRIME
100PBoronCZ-1001-2080-100P/PPRIME
100PBoronCZ-1001-20180-200P/PPRIME
100PBoronCZ-1001-20300-350P/EPRIME
100PBoronCZ-1001-20300-350P/PPRIME
100PBoronCZ-1001-20350-400P/PPRIME
100PBoronCZ-1001-20375-425P/EPRIME
100PBoronCZ-100.001-.005450-500P/PPRIME
100PBoronCZ-100.005-.02450-500P/PPRIME
100PBoronFZ-100>3000450-500P/PPRIME
100PBoronCZ-1001-20450-500P/PPRIME
100PBoronCZ-100.001-.005500-550P/EPRIME
100PBoronCZ-100.005-.02500-550P/EPRIME
100PBoronFZ-100>3000500-550P/EPRIME
100PBoronCZ-1001-20500-550P/EPRIME
100PBoronCZ-1001-20500-550P/E/DTOxPRIME
100PBoronCZ-1001-20500-550P/E/NiPRIME
100PBoronCZ-1001-20500-550P/E/WTOx
100PBoronCZ-1001-20950-1050P/EPRIME
100PBoronCZ-1001-20950-1050P/PPRIME

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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