4″ Silicon Wafer-4

PAM XIAMEN offers 4″ Silicon Wafer.

Diameter Type Dopant Growth
method
Orientation Resistivity  Thickness Surface Grade
100 P Boron CZ -111 1-20 450-500 P/P PRIME
100 P Boron CZ -111 1-20 500-550 P/E PRIME
100 P Boron CZ -110 1-20 450-500 P/P PRIME
100 P Boron CZ -110 1-20 500-550 P/E PRIME
100 Any Any CZ Any Any 350-600 P/E TEST
100 Undoped VGF -100 >1E7 500-600 P/P
100 Undoped VGF -100 >1E7 500-600 P/P
100 N Si VGF -100 600-650 P/E PRIME
100 P Zn VGF (100) off 2 deg twd <110> 0.01 375-425 P/E epi
100 P Zn VGF -100 600-650 P/E PRIME
100 Si Undoped VGF -100 >1E7 600-650 P/E PRIME
100 Si Undoped VGF -100 10000000 610-660 P/P EPI
100 Undoped CZ -100 >30 450-500 P/P EPI
100 Undoped CZ -100 >30 500-550 P/E EPI
100 N Sb CZ (100)-9 <.4 150-200 P/E EPI
100 N Sb CZ -100 .005-.02 450-500 P/P EPI
100 N Sb CZ -100 .005-.02 500-550 P/E EPI
100 P Ga CZ -100 .01-.04 450-500 P/P EPI
100 P Ga CZ -100 .01-.04 500-550 P/E EPI
100 N Si VGF -100 600-650 P/E PRIME
100 Si Fe VGF -100 5000000 600-650 P/E PRIME
100 Single Wafer Shipper ePak Holds1Wafer PRIME
100 Shipping Cassette ePak Holds25Wafers Clean Room
101.6 N Phos CZ -100 1-20 300-350 P/P
101.6 N Phos CZ -100 1-20 350-400 P/E
101.6 P Boron CZ -100 1-20 300-350 P/P
101.6 P Boron CZ -100 1-20 350-400 P/E

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

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