**PAM XIAMEN offers 4″ Silicon Wafer.**

Material | Orient. | Diam. | Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |

p-type Si:B | [100] | 4″ | 480 | C/C | 1-30 | SEMI Test, UNPOLISHED WAFERS WITH EDGE CHIPS |

p-type Si:B | [100] | 4″ | 500 | P/P | 1-50 | SEMI Prime, Carbon content (0.2-0.9)E16/cc per ASTM F1319, Oxygen content (9.4-8.8)E17/cc |

p-type Si:B | [100] | 4″ | 500 | P/P | 1-50 | SEMI Prime, Carbon content ~1.0ppma |

p-type Si:B | [100] | 4″ | 500 | P/P | 1-50 | SEMI Prime, Carbon content ~0.2ppma |

p-type Si:B | [100] | 4″ | 500 | P/P | 1-50 | SEMI Prime, Carbon content (1.3-2.2)E16/cc per ASTM F1319, Oxygen content (7.9-7.7)E17/cc |

p-type Si:B | [100] | 4″ | 500 | P/P | 1-50 | SEMI Prime, Carbon content (0.9-1.1)E16/cc per ASTM F1319, Oxygen content (8.4-8.0)E17/cc |

p-type Si:B | [100] | 4″ | 500 | P/P | 1-50 | SEMI Prime, Carbon content (9.8-14.1)E16/cc per ASTM F1319, Oxygen content 6.8E17/cc |

p-type Si:B | [100] | 4″ | 525 | P/P | 1-3 | SEMI Prime, TTV<5μm |

p-type Si:B | [100] | 4″ | 525 | P/P | 1-10 | SEMI Test, Unsealed, dirt and defects on wafers |

p-type Si:B | [100] | 4″ | 525 | P/P | 1-10 | SEMI Test, Dirty wafers, can be recleaned for extra fee |

p-type Si:B | [100] | 4″ | 525 | P/P | 1-5 | SEMI Test, Wafers with particles and scratches |

p-type Si:B | [100-4° towards[110]] ±0.5° | 4″ | 525 | P/E | 1-20 | SEMI Prime, TTV<5μm |

p-type Si:B | [100] | 4″ | 525 | P/E | 1-20 | Spotted defect wafers with three layers of SiO2 and Ge via Electron Beam Evaporation |

p-type Si:B | [100] | 4″ | 525 | NP/PN | 1-10 | SEMI Prime, with 150nm of LPCVD Stoichiometric Silicon Nitride on bith sides |

p-type Si:B | [100] | 4″ | 525 | NOxP/POxN | 1-10 | SEMI Prime, Both sides with 150nm of LPCVD Si3N4 over 200nm of SiO2 over Si |

p-type Si:B | [100-0.5°] | 4″ | 590 ±10 | E/E | 1-3 | SEMI Prime |

p-type Si:B | [100] | 4″ | 600 | P/P | 1-50 | SEMI Prime, TTV<1μm |

p-type Si:B | [100] | 4″ | 1000 | P/E | 1-5 | SEMI Prime, TTV<5μm |

p-type Si:B | [100] | 4″ | 1200 | P/P | 1-15 | SEMI Prime |

p-type Si:B | [100] | 4″ | 1200 | P/P | 1-15 | Prime |

p-type Si:B | [100] | 4″ | 2100 | P/E | 1-100 | SEMI Prime, Individual cst, Groups of 5 wafers |

For more information, please visit our website: https://www.powerwaywafer.com,

send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,

to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.