PAM-XIAMEN’ product line includes single-sided polishing (SSP) and double-sided polishing (DSP) wafer substrate or called mirror polished wafer for applications of semiconductors, MEMS, and other chips that require a strictly controlled flatness often require double-sided polishing chips. They are also necessary for a two-sided [...]
2018-08-07meta-author
Silicon Epi Wafers Sale
PAM XIAMEN offers Silicon Epi Wafers.
6″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3053
6″Øx675μm
n- Si:P[100]
0.001-0.002
P/EOx
0.016
n- Si:P
0.32-0.46
n/n+
4″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3053
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
360 – 440
n/n+
PAM3054
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
6.5
p- Si:B
3.6±10%
P/P/P+
22±1.5
p- Si:B
300±50
PAM3055
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
8.1±1
p- Si:B
4.5±10%
P/P/P+
6.85±0.75
p- Si:B
0.75±0.15
PAM3056
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
10.5
p- Si:B
570±10%
p/p+
PAM3057
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.15 ±10%
P/P+
PAM3058
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.25±10%
P/P+
PAM3059
4″Øx525μm
p- Si:B[111]
0.001-0.005
P/E
20
p- Si:B
175±10%
P/P+
PAM3060
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
21
p- Si:B
150 [...]
2019-02-13meta-author
PAM-XIAMEN offers R-Plane(1-102) Sapphire Substrate, single side polished,please see below spec:
2”,R-Plane Sapphire Substrate with SSP
No
Item
Specification
1
Material
High Purity Al2O3
2
Diameter
50.8土0.1mm
3
Orientation
R-plane<1-102>土0.2°
4
Thickness
430土15um
5
TTV
≤15um
6
Bow
≤10um
7
Warp
≤15um
8
Primary Flat Length
16.0土1.0mm
9
Front suface Roughmess(Ra)
Ra≤0.3nm
10
Bock Surtace Roughness(Ra)
0.8~1.2um
11
Primary Flat Orienation
A-plane+0.2°
12
Surtace onentation
R-Plane土0.2°
13
Laser Mark
back side or front side or no laser mark
14
Package
25pcsCassede.Vacum-sealed,Nitrogen-flled,Class-100 Cleanroom
3”,R-Plane Sapphire Substrate with SSP
No
ltem
Specification
1
Material
High Purity Al2O3
2
Diameter
76.2土0.2mm
3
Thickness
350土25um
4
Orientation
R-plane<1-102>土0.2°
5
Primary Flat Orientation
45+2CCCW [...]
2020-05-21meta-author
The development stages of semiconductor wafers are elemental semiconductor, compound semiconductor and wide bandgap semiconductor, as shown in the Fig. 1. Semiconductor wafers can be divided into narrow band gap semiconductors and wide band gap semiconductors according to different band gaps. Wide Band Gap [...]
2019-03-21meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:Incipient plasticity in 4H-SiC during quasistatic nanoindentation
Published by:
Saurav Goel ;Jiwang Yan ;Xichun Luo ;Anupam Agrawald
a School of Mechanical and Aerospace [...]
2019-12-09meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
37
p- Si:B
35±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
16.5
n- Si:P
12.5±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
45
p- Si:B
13±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
7±1
n- Si:P
12±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
45
p- Si:B
14.5±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
7
n- Si:P
12±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.002-0.005
P/E
88
p- Si:B
80.5±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.002-0.005
P/E
88
n- Si:P
27±10%
P/N/N+
4″Øx380μm
n- Si:As[111]
0.002-0.005
P/E
105
p- Si:B
0.0035±10%
P/N/N+
4″Øx380μm
n- Si:As[111]
0.002-0.005
P/E
26
n- Si:P
5±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
10.15
n- Si:P
3.8±0.5
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
6.8±0.8
n- Si:P
0.55±0.15
N/N/N+
4″Øx380μm
n- Si:As[111]
0.004-0.008
P/EOx
16.5
n- Si:P
35 ±10%
N/N+
4″Øx508μm
n- Si:As[111]
0.002-0.005
P/E
19±1.3
n- Si:P
25±5
N/N/N+
4″Øx508μm
n- Si:As[111]
0.002-0.005
P/E
54.5±3.6
n- Si:P
4.4
N/N/N+
4″Øx380μm
n- Si:As[111]
0.001-0.005
P/EOx
20
n- Si:P
270 ±10%
N/N+
4″Øx400μm
n- Si:As[111]
0.001-0.005
P/E
20
n- Si:P
0.09 ±10%
N/N+
4″Øx400μm
n- [...]
2019-03-08meta-author