450mm Silicon Wafers

PAM XIAMEN offers 450mm Silicon Wafers.

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

2019-02-20

TiO2（Rutile） substrates

PAM XIAMEN offers TiO2（Rutile） substrates. Rutile ( TiO2) single crystal is one of the most suitable materials used for spectral prisms and polarizing devices such as optical isolators and beam displacers because it has a large birefringence with a high refractive index. Compared to [...]

2019-05-20meta-author

GaAs HEMT epi wafer

PAM-XIAMEN can offer 4” GaAs HEMT epi wafer with 2D electron gas (2DEG) with very high electron mobility of 5-7E5 cm2/V.s, please see below typical wafers with GaAs HEMT structure: 1. GaAs HEMT Epitaxial Wafer Structures Structure 1: 4″ AlGaAs / GaAs HEMT epi wafer ( PAM200416-HEMT): HEMT structure Thickness GaAs [...]

2013-11-19meta-author GaAs HEMT epi wafer

Lithium Chip

PAM XIAMEN offers Lithium Chip. Lithium Chip 16 mm Dia x 0.6 mm Thickness for Li-ion Battery R&D Lithium chip is widely used for Li-ion and Li metal rechargeable battery R&D. SPECIFICATIONS: Purity 99.9% Lithium Melting Point 180.5 °C Density 0.534 g/cm3 Color Silver Dimension 16 mm x 0.6 mm (diameter x [...]

2019-05-07meta-author

SiC epitaxy growth using chloride-based CVD

Abstract The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 μm/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately [...]

2017-09-05meta-author

Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition

Epitaxial growth was performed on 8° off-axis 4H-SiC(0001) by horizontal hot-wall chemical vapor deposition (CVD) in a SiH4-C3H8-H2 system at 1550°C. High growth rates of 10–13 µm/h were attained by growth with a high SiH4 flow rate of 4.0 sccm. A mirror like surface [...]

2019-03-27meta-author

Ge single crystal(Prime grade)-2

PAM XIAMEN offers 1″ Diameter Wafer. 1″ Diameter Wafer Ge Wafer Undoped, 1″ dia x 0.5 mm , 1SP(100) R:>45 Ohm.cm Ge Wafer (100) Undoped, 1″ dia x 0.5 mm , 2SP,R:>50 ohm.cm Ge Wafer (110) Undoped, 1″ dia x 0.5 mm , 1SP,R:>50 [...]

2019-04-23meta-author

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
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Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
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CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
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Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

450mm Silicon Wafers

450mm Silicon Wafers

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TiO2（Rutile） substrates

GaAs HEMT epi wafer

Lithium Chip

SiC epitaxy growth using chloride-based CVD

Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition

Ge single crystal(Prime grade)-2

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers