450mm Silicon Wafers

PAM XIAMEN offers 450mm Silicon Wafers.

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

2019-02-20

PAM-XIAMEN Offers Gallium nitride

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaN and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are pleased to [...]

2017-11-15meta-author

Silicon Wafer Thickness:275+- 25µm

PAM XIAMEN offers Silicon Wafer Thickness:275+- 25µm. Silicon Wafer ,2in Si Wafer,P/Boron <111> ON +-1°, 0.01-0.02 Ohm-cm ,275+- 25µm Thickness,SSP, PRIME -Si Wafers,Single SidePolished/Etched Back, Primary Semi Std Flat, Surface Roughness <1nm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [...]

2019-08-22meta-author

Namiki Announces Groundbreaking Technological Upgrades for Substrate Manufacture

The Japanese component manufacturing company Namiki recently announced several technological advancements and equipment upgrade for advanced industrial component production. Namiki successfully produced unprecedented large sized diamond substrates and realized the bonding of two different materials under room temperatures; moreover, the corporation reinvented its cleaning [...]

2017-08-01meta-author

4″ Silicon Wafer-2

PAM XIAMEN offers 4″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 100 N Phos CZ -100 1-20 500-550 P/E/WTOx 100 N Phos CZ -100 1-50 2900-3100 P/E PRIME 100 N Phos CZ -100 50-70 4850-5050 P/E PRIME 100 N Phos CZ -100 1-50 5900-6100 P/E PRIME 100 N Phos CZ -100 >10 9900-10100 P/P PRIME 100 N Phos CZ -111 1-10 4000-6000 P/E PRIME 100 N Phos FZ -111 > 20000 275-325 P/E PRIME 100 N Phos FZ -111 > 20000 275-325 P/P PRIME 100 N Phos FZ -111 2000-4000 275-325 P/P PRIME 100 N Phos CZ -111 450-500 P/P PRIME 100 N Phos FZ -111 > 20000 475-525 P/P PRIME 100 N As CZ -111 .001-.005 500-550 P/E PRIME 100 N Phos CZ -111 1-20 500-550 P/E PRIME 100 N Phos FZ -111 2000-4000 500-550 P/P PRIME 100 N Phos CZ -111 1-20 4800-5200 P/E PRIME 100 N Phos CZ -111 1-3 11300-11500 P/E PRIME 100 N Phos CZ -110 450-500 P/P PRIME 100 N Phos CZ -110 1-20 500-550 P/E PRIME 100 P Boron CZ (100)-4 0.01-0.02 175-225 P/P PRIME 100 P Boron CZ (100)-4 0.01-0.02 200-250 P/E PRIME 100 P Boron CZ (100)-4 0.01-0.02 325-375 P/P PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth [...]

2019-03-04meta-author

8″ Prime Silicon Wafer

PAM XIAMEN offers 8″ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/E 8″(200.0±0.2mm) Ø×1,000±25µm, p-type Si:B[111]±0.5°, Ro: <100 Ohmcm, TTV<6µm, Bow<60µm, Warp<60µm, One-side-polished, Particles: ≤10@≥0.3µm, Back-side etched, SEMI notch, Sealed in Empak or equivalent cassette. For more information, please visit our website: https://www.powerwaywafer.com, [...]

2019-07-02meta-author

Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Highlights •N-polar InAlN thin films were grown on GaN substrates by molecular beam epitaxy. •Surface morphology transitioned from quasi-3D to step-flow at high temperature. •Indium saturation was observed for increasing indium flux at high temperature. •Increased aluminum flux helped increase indium incorporation efficiency. •N-polar InAlN films with 0.19 nm [...]

2016-01-04meta-author GaN substrate, GaN Wafer, InAlN thin films

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
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Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

sales@powerwaywafer.com tech@powerwaywafer.com

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

450mm Silicon Wafers

450mm Silicon Wafers

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