4H N Type SiC

4H N Type SiC

4H N type SiC wafer with Nitrogen doped is available, size from 2” to 4”. Dummy wafer and prime wafer are available. High quality single crystal SiC wafer are available for the electronics and optoelectronics industries. SiC wafer is a next-generation semiconductor material with unique electrical properties and excellent thermal properties. Compared with silicon wafer and GaAs wafer, n doped silicon carbide wafer is more suitable for high temperature and high power devices.

1. 4H-SiC Properties VS. 6H-SiC Properties

 PolytypeSingle Crystal 4HSingle Crystal 6H
Lattice Parametersa=3.076 Åa=3.073 Å
c=10.053 Åc=15.117 Å
Stacking SequenceABCBABCACB
Band-gap3.26 eV3.03 eV
Density3.21 · 103 kg/m33.21 · 103 kg/m3
Therm. Expansion Coefficient4-5×10-6/K4-5×10-6/K
Refraction Indexno = 2.719no = 2.707
ne = 2.777ne = 2.755
Dielectric Constant9.69.66
Thermal Conductivity490 W/mK490 W/mK
Break-Down Electrical Field2-4 · 108 V/m2-4 · 108 V/m
Saturation Drift Velocity2.0 · 105 m/s2.0 · 105 m/s
Electron Mobility800 cm2/V·S400 cm2/V·S
hole Mobility115 cm2/V·S90 cm2/V·S
Mohs Hardness~9~9

 

2. 4H N-TYPE SIC, 2″WAFER SPECIFICATION 

SUBSTRATE PROPERTYS4H-51-N-PWAM-250 S4H-51-N-PWAM-330 S4H-51-N-PWAM-430
DescriptionA/B Production Grade C/D Research Grade D Dummy Grade   4H SiC Substrate
Polytype4H 
Diameter(50.8 ± 0.38) mm
Thickness(250 ± 25) μm                     (330 ± 25) μm                (430 ± 25) μm
Carrier Typen-type
DopantNitrogen
Resistivity (RT)A/B:0.012 – 0.028 Ω·cm;C:0.012 – 0.1 Ω·cm;D:0.02 – 0.3 Ω·cm
Surface Roughness< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHMA<30 arcsec                   B/C/D <50 arcsec
Micropipe DensityA+≤1cm-2 A≤10cm-2   B≤30cm-2 C≤50cm-2 D≤100cm-2
Surface Orientation
On axis<0001>± 0.5°
Off axis4°or 8° toward <11-20>± 0.5°
Primary flat orientationParallel {1-100} ± 5°
Primary flat length(16 ± 1.7) mm
Secondary flat orientationSi-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length(8 ± 1.7) mm
Surface FinishSingle or double face polished
PackagingSingle wafer box or multi wafer box
Usable areaA:≥ 90 %;B:≥ 85 %;C:≥ 80 %;D:≥ 70 %
Edge exclusion1 mm

 

3. 4H-SIC Wafer, N-TYPE , 3″WAFER SPECIFICATION 

SUBSTRATE PROPERTYS4H-76-N-PWAM-330               S4H-76-N-PWAM-430
DescriptionA/B Production Grade C/D Research Grade D Dummy Grade   4H SiC Substrate
Polytype4H 
Diameter(76.2 ± 0.38) mm
Thickness     (350 ± 25) μm                            (430 ± 25) μm
Carrier Typen-type
DopantNitrogen
Resistivity (RT)0.015 – 0.028Ω·cm
Surface Roughness< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHMA<30 arcsec                   B/C/D <50 arcsec
Micropipe DensityA+≤1cm-2 A≤10cm-2   B≤30cm-2 C≤50cm-2 D≤100cm-2
TTV/Bow /Warp<25μm
Surface Orientation
On axis<0001>± 0.5°
Off axis4°or 8° toward <11-20>± 0.5°
Primary flat orientation<11-20>±5.0°
Primary flat length22.22 mm±3.17mm
0.875″±0.125″
Secondary flat orientationSi-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length11.00 ± 1.70 mm
Surface FinishSingle or double face polished
PackagingSingle wafer box or multi wafer box
ScratchNone
Usable area≥ 90 %
Edge exclusion2mm

 

4. 4H N TYPE SIC 4″ WAFER SPECIFICATION 

SUBSTRATE PROPERTYS4H-76-N-PWAM-330               S4H-76-N-PWAM-430
DescriptionA/B Production Grade C/D Research Grade D Dummy Grade   4H SiCSubstrate
Polytype4H 
Diameter(76.2 ± 0.38) mm
Thickness     (350 ± 25) μm                            (430 ± 25) μm
Carrier Typen-type
DopantNitrogen
Resistivity (RT)0.015 – 0.028Ω·cm
Surface Roughness< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHMA<30 arcsec                   B/C/D <50 arcsec
Micropipe DensityA+≤1cm-2 A≤10cm-2   B≤30cm-2 C≤50cm-2 D≤100cm-2
TTV/Bow /Warp<45μm
Surface Orientation
On axis<0001>± 0.5°
Off axis4°or 8° toward <11-20>± 0.5°
Primary flat orientation<11-20>±5.0°
Primary flat length32.50 mm±2.00mm
Secondary flat orientationSi-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length18.00 ± 2.00 mm
Surface FinishSingle or double face polished
PackagingSingle wafer box or multi wafer box
ScratchNone
Usable area≥ 90 %
Edge exclusion2mm

 

PAM-XIAMEN also can offer the following specifications:

4H N type SiC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION : Thickness:330μm/430μm

4H N-type SiC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION: Thickness:330μm/430μm

a-plane SiC Wafer, size: 40mm*10mm,30mm*10mm,20mm*10mm,10mm*10mm,specs below: 

4H N type SiC Wafer Thickness:330μm/430μm or custom

5. More about 4H-SiC Properties

5.1 Optical Property:

4H SiC refractive index decreases with the increasing of wavelength:

4H N type SiC Refractive Vs Wavelength

The 4H SiC bandgap is declining when the temperature goes up:

4H SiC Bandgap-Temperature

5.2 Thermal Property

4H SiC thermal conductivity is changing along with the temperature. When the temperature is low(about 40℃), the the thermal conductivity of 4H N type SiC wafer is climbing up; however, when the temperature is high over 40℃, it begins down slowly:

4H SiC Thermal Conductivity-Temperature

For more information, please contact us email at [email protected] and [email protected].

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