4H N Type SiC

4H N Type SiC

High quality single crystal SiC wafer are available for the electronics and optoelectronics industries. SiC wafer is a next-generation semiconductor material with unique electrical properties and excellent thermal properties. Compared with silicon wafer and GaAs wafer, SiC wafer is more suitable for high temperature and high power devices. 4H N type with Nitrogen doped SiC is available, size from 2” to 4”.

SILICON CARBIDE MATERIAL PROPERTIES
 Polytype Single Crystal 4H Single Crystal 6H
Lattice Parameters a=3.076 Å a=3.073 Å
c=10.053 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Band-gap 3.26 eV 3.03 eV
Density 3.21 · 103 kg/m3 3.21 · 103 kg/m3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index no = 2.719 no = 2.707
ne = 2.777 ne = 2.755
Dielectric Constant 9.6 9.66
Thermal Conductivity 490 W/mK 490 W/mK
Break-Down Electrical Field 2-4 · 108 V/m 2-4 · 108 V/m
Saturation Drift Velocity 2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility 800 cm2/V·S 400 cm2/V·S
hole Mobility 115 cm2/V·S 90 cm2/V·S
Mohs Hardness ~9 ~9
4H N-TYPE SIC, 2″WAFER SPECIFICATION 
SUBSTRATE PROPERTY S4H-51-N-PWAM-250 S4H-51-N-PWAM-330 S4H-51-N-PWAM-430
Description A/B Production Grade C/D Research Grade D Dummy Grade   4H SiC Substrate
Polytype 4H 
Diameter (50.8 ± 0.38) mm
Thickness (250 ± 25) μm                     (330 ± 25) μm                (430 ± 25) μm
Carrier Type n-type
Dopant Nitrogen
Resistivity (RT) A/B:0.012 – 0.028 Ω·cm;C:0.012 – 0.1 Ω·cm;D:0.02 – 0.3 Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM A<30 arcsec                   B/C/D <50 arcsec
Micropipe Density A+≤1cm-2 A≤10cm-2   B≤30cm-2 C≤50cm-2 D≤100cm-2
Surface Orientation
On axis <0001>± 0.5°
Off axis 4°or 8° toward <11-20>± 0.5°
Primary flat orientation Parallel {1-100} ± 5°
Primary flat length (16 ± 1.7) mm
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length (8 ± 1.7) mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Usable area A:≥ 90 %;B:≥ 85 %;C:≥ 80 %;D:≥ 70 %
Edge exclusion 1 mm
4H SIC,N-TYPE , 3″WAFER SPECIFICATION 
SUBSTRATE PROPERTY S4H-76-N-PWAM-330               S4H-76-N-PWAM-430
Description A/B Production Grade C/D Research Grade D Dummy Grade   4H SiC Substrate
Polytype 4H 
Diameter (76.2 ± 0.38) mm
Thickness      (350 ± 25) μm                            (430 ± 25) μm
Carrier Type n-type
Dopant Nitrogen
Resistivity (RT) 0.015 – 0.028Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM A<30 arcsec                   B/C/D <50 arcsec
Micropipe Density A+≤1cm-2 A≤10cm-2   B≤30cm-2 C≤50cm-2 D≤100cm-2
TTV/Bow /Warp ＜25μm
Surface Orientation
On axis <0001>± 0.5°
Off axis 4°or 8° toward <11-20>± 0.5°
Primary flat orientation <11-20>±5.0°
Primary flat length 22.22 mm±3.17mm
0.875″±0.125″
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 11.00 ± 1.70 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Scratch None
Usable area ≥ 90 %
Edge exclusion 2mm
4H SIC,N-TYPE , 4″WAFER SPECIFICATION 
SUBSTRATE PROPERTY S4H-76-N-PWAM-330               S4H-76-N-PWAM-430
Description A/B Production Grade C/D Research Grade D Dummy Grade   4H SiCSubstrate
Polytype 4H 
Diameter (76.2 ± 0.38) mm
Thickness      (350 ± 25) μm                            (430 ± 25) μm
Carrier Type n-type
Dopant Nitrogen
Resistivity (RT) 0.015 – 0.028Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM A<30 arcsec                   B/C/D <50 arcsec
Micropipe Density A+≤1cm-2 A≤10cm-2   B≤30cm-2 C≤50cm-2 D≤100cm-2
TTV/Bow /Warp ＜45μm
Surface Orientation
On axis <0001>± 0.5°
Off axis 4°or 8° toward <11-20>± 0.5°
Primary flat orientation <11-20>±5.0°
Primary flat length 32.50 mm±2.00mm
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 18.00 ± 2.00 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Scratch None
Usable area ≥ 90 %
Edge exclusion 2mm
4H N-type SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION : Thickness:330μm/430μm
4H N-type SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION: Thickness:330μm/430μm
a-plane SiC Wafer, size: 40mm*10mm,30mm*10mm,20mm*10mm,10mm*10mm,specs below: 
4H N type Thickness:330μm/430μm or custom
2018-08-07

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