4H-SiC Metalens Substrate
4H-SiC metalens is a novel optical device based on silicon carbide (SiC) material, particularly designed to address thermal drift issues in high-power laser systems. Traditional lenses are prone to focal shift and optical performance degradation due to thermal accumulation under high-power laser irradiation, while silicon carbide metalens, with their excellent thermal conductivity, high refractive index, and mechanical hardness, can maintain stable optical performance under harsh conditions. SiC substrates are available for the preparation of metalenses, please refer to the specifications:
https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html
1. Preparation Process of 4H-SiC Metalens
4H-SiC substrate has higher thermal conductivity and lower defect density compared to other crystal forms such as 6H-SiC. Select 4H-SiC wafer with high thermal conductivity (approximately 490 W/m · K), high refractive index (~2.6), and excellent mechanical hardness to prepare superlenses that meet application requirements. Adopting the optimal phase design, optimizing the size of the nanocolumns to achieve dynamic phase modulation, followed by nanostructure processing. Firstly, a nano pillar pattern is defined on a 4H-SiC substrate via electron beam lithography (EBL). Secondly, the physical vapor deposition (PVD) method is used to deposit the mask material for subsequent etching processes. Finally, etching forms high aspect ratio nano pillar structures with fill factors ranging from 0.3 to 0.78 to ensure optical performance.
2. Characteristics of 4H–SiC Based Metalenses
Current research indicates that high thermal stability is a major advantage of 4H-SiC superlenses. After continuous irradiation with a 15 W, 1030 nm laser for 1 hour, the temperature rise was only 3.2 ° C and the focal shift was only 13 µ m, far superior to the 54 ° C temperature rise and 213 µ m focal shift of traditional lenses. It can be seen that its high thermal conductivity can effectively suppress thermal drift, reduce dependence on cooling systems, and improve stability. This excellent thermal stability makes it widely applicable in high-power laser systems.
Secondly, the high optical performance further demonstrates the superiority of 4H SiC superlenses. Its numerical aperture (NA) is 0.5, focal length is 1 cm, focusing efficiency is as high as 96.31%, and transmittance reaches 0.71, achieving diffraction limited focusing. This high efficiency makes it highly promising in fields such as precision optical imaging, laser processing, and optical communication.
Additionally, the compact design makes 4H-SiC metalens more practical. The lens aperture is 1.15 cm, suitable for high-power laser beam sizes, while eliminating the dependence of traditional lenses on complex cooling systems, providing a lightweight and high-performance solution for high-energy laser applications.
3. Application of SiC Metalens
4H SiC metalens have shown broad application prospects in multiple high-tech fields due to their excellent optical performance and thermal stability. In terms of laser processing, it can be used for precision machining tasks such as cutting and welding, improving machining accuracy and efficiency. In the field of optical communication, 4H SiC superlens help enhance the stability and integration of optical devices, and improve data transmission efficiency. In addition, in the aerospace field, this lens can meet the thermal management requirements of high-power laser systems, ensuring reliable operation of equipment in extreme environments.
With the continuous advancement of technology, the performance and application range of 4H SiC metalens will be further expanded. Future research will focus on optimizing the design of nanocolumns, enhancing the polarization insensitivity and wideband applicability of lenses to meet a wider range of optical application needs. In addition, 4H-SiC superlens have broad application prospects in emerging fields such as augmented reality (AR) and quantum optics, which can promote the development of next-generation optical devices. In the future, multifunctional integrated devices will be explored, combining optoelectronic detection and signal processing functions to play a greater role in fields such as optical sensing, imaging, and information processing.
Whether you need 4H-SiC substrate for research or for industrial applications, please contact us email at [email protected] and [email protected].