SILICON CARBIDE (SiC) materials are currently metamorphosing from research and development into a market driven manufacturing product. SiC substrates are currently used as the base for a large fraction of the world production of green, blue, and ultraviolet light-emitting diodes (LEDs). Emerging markets for SiC homoepitaxy include high-power switching devices and microwave devices for S and X band . Applications for heteroepitaxial GaN-based structures on SiC substrates include LEDs and microwave devices. These exciting device results stem primarily from the exploitation of the unique electrical and thermophysical properties offered by SiC compared to Si and GaAs. Among these are: a large bandgap for high-temperature operation and radiation resistance; high critical breakdown field for high-power output; high saturated electron velocity for high-frequency operation; significantly higher thermal conductivity for thermal management of high-power devices.
5-2-1 SiC Material Properties
3-1. Large Point Defects Defects which exhibit a clear shape to the unassisted eye and are > 50 microns across. These features include spikes, adherent particles, chips and craters. Large point defects less than 3 mm apart count as one defect.
5-7-1 Future Tied to Material Issues The previous sections of this chapter have already highlighted major known technical obstacles and immaturities that are largely responsible for hindered SiC device capability. In the most general terms, these obstacles boil down to a handful of key fundamental [...]
5-6-4-2 SiC High-Power Switching Transistors Three terminal power switches that use small drive signals to control large voltages and currents (i.e., power transistors) are also critical building blocks of high-power conversion circuits. However, as of this writing, SiC high-power switching transistors are not yet commercially [...]
2-29.Resistivity The resistance to current flow and movement of electron and hole carries in the silicon carbide. Resistivity is related to the ratio of voltage across the silicon to the current flowing through the silicon carbide per unit volume of silicon carbide. The units for [...]
2-23.Micropipe density A micropipe, also referred to as “micropore”, “microtube”, “capillary defect “or “pinhole defect”, is a crystallographic defect in a single crystal substrate.It is a important parameter to manufacturers of silicon carbide (SiC) substrates which are used in a variety of industries such as [...]
2-28.WARP Warp is the difference between the maximum and the minimum distances of the median surface of a free, un-clamped wafer from the reference plane defined above. This definition follows ASTM F657, and ASTM F1390,which deviation from a plane of a slice or wafer centerline [...]