5-6 SiC Electronic Devices and Circuits

5-6 SiC Electronic Devices and Circuits

5-6 SiC Electronic Devices and Circuits

This section briefly summarizes a variety of SiC electronic device designs broken down by major application areas. SiC process and material technology issues limiting the capabilities of various SiC device topologies are highlighted as key issues to be addressed in further SiC technology maturation. Throughout this section, it should become apparent to the reader that the most difficult general challenge preventing SiC electronics from fully attaining beneficial capabilities is attaining long-term high operational reliability, while operating in previously unattained temperature and power density regimes. Because many device reliability limitations can be traced to fundamental material and junction/interface issues already mentioned in Sections 5.4 and 5.5, efforts to enable useful (i.e., reliable) SiC electronics should focus on improvements to these fundamental areas.

2018-06-28

Share this post

Related Posts

5-6-4-1-2 Bipolar and Hybrid Power Rectifiers

5-6-4-1-2 Bipolar and Hybrid Power Rectifiers For higher voltage applications, bipolar minority carrier charge injection (i.e., conductivity modulation) should enable SiC pn diodes to carry higher current densities than unipolar Schottky diodes whose drift regions conduct solely using dopant-atom majority carriers . Consistent with silicon [...]

2018-06-28meta-author
2-15.Orange Peel

2-15.Orange Peel Visually detectable surface roughening when viewed under diffuse illumination.  

2018-06-28meta-author
5-5-5 SiC Insulators: Thermal Oxides and MOS Technology

5-5-5 SiC Insulators: Thermal Oxides and MOS Technology The vast majority of semiconductor-integrated circuit chips in use today rely on silicon metal-oxide– semiconductor field-effect transistors (MOSFETs), whose electronic advantages and operational device physics are summarized in Katsumata’s chapter and elsewhere . Given the extreme usefulness and success of [...]

2018-06-28meta-author
2-7.Primary Flat Orientation

2-7.Primary Flat Orientation The at of the longest length on the wafer, oriented such that the chord is parallel with a specied low index crystal plane. Measured on one wafer per ingot using Laue back-reection technique with manual angle measurement.  

2018-06-28meta-author
3-1. Large Point Defects

3-1. Large Point Defects Defects which exhibit a clear shape to the unassisted eye and are > 50 microns across. These features include spikes, adherent particles, chips and craters. Large point defects less than 3 mm apart count as one defect.

2018-06-28meta-author
5-3 Applications and Benefits of SiC Electronics

5-3 Applications and Benefits of SiC Electronics Two of the most beneficial advantages that SiC-based electronics offer are in the areas of high-temperature and high-power device operation. The specific SiC device physics that enables high-temperature and high-power capabilities will be examined first, by several examples of revolutionary [...]

2018-06-28meta-author