Silicon wafers, per SEMI Prime,
P/P 5″Ø×240±10µm,
FZ p-type Si:B[100]±0.5°,
Ro=(240-280)Ohmcm,
TTV<5µm, Bow<25µm, Warp<25µm,
Both-sides-polished,
SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs.
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 2″ Diameter Wafer-2″ wafers(111). 2″ Diameter Wafer 2″ wafers(111) Ge <111> undoped Ge Wafer . Undoped, 2″ dia x 0.5 mm, 1SP (111) R >50 ohm.cm Ge Wafer . Undoped, 2″ dia x 0.5 mm, 2SP (111) R >50 Ohm.cm Ge<111> [...]
PAM XIAMEN offers LiNbO3 Crystal. LiNbO3 Crystal has unique electro-optical, piezoelectric, photoelastic and nonlinear optical properties. They are strongly birefringent. They are used in laserfrequency doubling, nonlinear optics, Pockels cells, optical parametric oscillators, Q-switching devices for lasers, other acousto-opticdevices, optical switches for gigahertz frequencies, [...]
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Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocation Highlights •High-quality InSb was grown on GaAs by MBE using a “buffer-free” method. •The strain energy is relieved by interfacial misfit dislocations observed by TEM. •The type and separation of dislocations are [...]
We report here the lateral epitaxial overgrowth (LEO) of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy (MBE) growth with radio frequency nitrogen plasma as a gas source. Two kinds of GaN nanostructures are defined by electron beam lithography and realized on [...]
IV Test Report A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact [...]
