Photoemission study of LT-GaAs
The electronic structure of GaAs (1 0 0) grown by low-temperature molecular beam epitaxy was investigated by means of photoemission spectroscopy. Slight differences are found in the valence band spectra of GaAs layers grown at different As2/Ga flux ratios. Analysis of As 3d [...]
PAM XIAMEN offers CeO2 Epi Film on YSZ.
CeO2 Film (40 nm one side) on YSZ <100> 10x10x0.5 mm
Epitaxial thin Film Composition
<100> CeO2
Epitaxial Film Thickness
40 nm +/- 10 nm
Growth method
Spin coating
Epitaxial FWHM
< 5 o
Substrate
<100>, YSZ, 10x10x0.5 mm, one side polished
CeO2 Film (40 nm one side) on YSZ [...]
2019-04-19meta-author
PAM XIAMEN offers Large Size Photomask.
Chromium plate accuracy (Standard Size:430mmx430mm)
Accuracy/Grade
Max Accuracy
High-precision
Medium accuracy
General accuracy
Min.Line/Space Width
0.75μm/0.75μm
5μm/5μm
10μm/10μm
20μm/20μm
CD Control
±0.15μm(QZ)
±0.5μm
±1.0μm
±2.0μm
Total Pitch Accuracy
±0.5μm(QZ)
±1.0μm
±2.0μm
±2.0μm
Registration Accuracy
±0.5μm(QZ)
±1.0μm
±2.0μm
±3.0μm
Overlay Accuracy
±0.5μm(QZ)
±1.0μm
±2.0μm
±3.0μm
Orthogonality
±0.75μrad
±2.0μrad
±3.0μrad
±4.0μrad
Chrome plate material (Photomask blank plate)
Material
SodaLimeGlass、Quartz
Max. Size
850mm*1400mm
Normal Size
420mmx520mm,520mm*610mm,520mm*800mm,700mm*800mm,
800mm*920mm,800mm*960mm,850mm*1200mm,850mm*1400mm
Thickness
2.3±0.2mm,3.0±0.2mm,4.8±0.2mm,7.8±0.2mm,
5.0±0.2mm(QZ),8.0±0.2mm(QZ),10.0±0.2mm(QZ)
Film Type
LowReflectanceChrome
Optical Density
(λ=450nm)
BetweenPlates3.0±0.3InPlate±0.3
Reflectivity
(λ=436nm)
BetweenPlates10±5%InPlate±2%
Main application areas:
1、LCD, TFT, CF, TouchPanel, OLED, PDP and other flat panel display industries
2、HDI, [...]
2019-07-04meta-author
PAM XIAMEN offers Single crystal GaTe Substrate.
Gallium(II) telluride, GaTe, is a chemical compound of gallium and tellurium. There is research interest in the structure and electronic properties of GaTe because of the possibility that it, or related compounds, may have applications in the [...]
2019-04-22meta-author
PAM-XIAMEN offers M Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN M-SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
M plane (1-100) off angle toward A-axis 0 ±0.5°
M plane (1-100) off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
>106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
PAM XIAMEN offers LiAlO2 Lithium Aluminate Crystal Substrates.
Main Parameters
Crystal structure
M4
Unit cell constant
a=5.17 A c=6.26 A
Melt point(℃)
1900
Density
2.62(g/cm3)
Hardness
7.5(mohs)
Size
10×3,10×5,10×10,15×15,20×15,20×20,
Ф15,Ф20,Ф1″,Ф2″, Ф2.6″
Thickness
0.5mm, 1.0mm
Polishing
Single or double side polished
Crystal [...]
2019-03-13meta-author