Silicon wafers, per SEMI Prime,
P/P 5″Ø×240±10µm,
FZ p-type Si:B[100]±0.5°,
Ro=(240-280)Ohmcm,
TTV<5µm, Bow<25µm, Warp<25µm,
Both-sides-polished,
SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs.
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers FZ Silicon Ignot Diameter 60+1mm. FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, please visit our website: [...]
PAM XIAMEN offers FZ & MCZ silicon ingot and silicon wafer Description Growth Method — MCZ Single crystal size inch 2 – 8 Conductivity Type — N P Doped elements — P/Sb B Crystal Orientation — <111> <110> <100> <111> <110> <100> Resistivity Ω.cm 0.0015-100 0.001-100 RRG % 20 20 Oxygen Concentration atoms/cm3 1.00E+18 1.00E+18 Carbon Concentration atoms/cm3 5.00E+16 5.00E+16 Diameter mm 55-157 55-157 Length mm 50-500 50-500 Dislocation EA/cm2 N/A N/A Swirl(After Oxidation) — N/A N/A Remarks：The above parameters can be customized. 1″ FZ Silicon Ingot with Diameter 25mm 2″ FZ Silicon Ingot with Diameter 50mm 3″ FZ Silicon Ingot with Diameter [...]
PAM XIAMEN offers TeO2 Tellurium Dioxide Crystals. Tellurium Dioxide, TeO2 is an excellent ascousto-optic (AO) crystal with high AO figure of merit, birefringence, good optical rotation and slow propagation velocity along [110] direction. The resolution of AO devices made of TeO2 crystals will increase several [...]
Temperature dependent growth of InGaN/GaN single quantum well InGaN/GaN single quantum well (SQW) structures under various InGaN growth temperatures have been grown by metal organic chemical vapor deposition (MOCVD), the surface morphologies and optical properties are investigated. The radius of the typical V-pits on the [...]
Global semiconductor market is forecasted to reach 327 billion dollar in 2016 WSTS expects the world semiconductor market to be down 2.4% in 2016 at US$327 billion with growth returning in 2017 and 2018. For 2016, growth in Optoelectronics (1.8%), Sensors (7.6%), and Analog ICs (1%) [...]
N-type or P-type 125mm silicon wafer can be supplied with the orientation of <111> or <100>. More specs are shown as following: 1. 125mm Silicon Substrate Wafer List No. 1 ID Dia Type Dopant Ori Res (Ohm-cm) Thick (um) Polish Grade Description PAM2683 125mm N As <111> <0.0035 375um SSP MECH Mechanical Grade. EPI Layer: N/Phos Res: 4.59-5.874ohm.cm 12-16um PAM2684 125mm N P <100> <0.001 3000um SSP Test 3mm thick PAM2685 125mm P B <111> 43485 525-575um SSP Test Sold As-Is PAM2686 125mm P B <111> 43485 500-550um SSP Test Sold As-Is No. 2 Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity (Ωcm) Comment PAM2687 p-type Si:B [100] 5″ 889 [...]
