Silicon wafers, per SEMI Prime,
P/P 5″Ø×240±10µm,
FZ p-type Si:B[100]±0.5°,
Ro=(240-280)Ohmcm,
TTV<5µm, Bow<25µm, Warp<25µm,
Both-sides-polished,
SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Photoemission study of LT-GaAs The electronic structure of GaAs (1 0 0) grown by low-temperature molecular beam epitaxy was investigated by means of photoemission spectroscopy. Slight differences are found in the valence band spectra of GaAs layers grown at different As2/Ga flux ratios. Analysis of As 3d [...]
PAM XIAMEN offers CeO2 Epi Film on YSZ. CeO2 Film (40 nm one side) on YSZ <100> 10x10x0.5 mm Epitaxial thin Film Composition <100> CeO2 Epitaxial Film Thickness 40 nm +/- 10 nm Growth method Spin coating Epitaxial FWHM < 5 o Substrate <100>, YSZ, 10x10x0.5 mm, one side polished CeO2 Film (40 nm one side) on YSZ [...]
PAM XIAMEN offers Large Size Photomask. Chromium plate accuracy (Standard Size:430mmx430mm) Accuracy/Grade Max Accuracy High-precision Medium accuracy General accuracy Min.Line/Space Width 0.75μm/0.75μm 5μm/5μm 10μm/10μm 20μm/20μm CD Control ±0.15μm(QZ) ±0.5μm ±1.0μm ±2.0μm Total Pitch Accuracy ±0.5μm(QZ) ±1.0μm ±2.0μm ±2.0μm Registration Accuracy ±0.5μm(QZ) ±1.0μm ±2.0μm ±3.0μm Overlay Accuracy ±0.5μm(QZ) ±1.0μm ±2.0μm ±3.0μm Orthogonality ±0.75μrad ±2.0μrad ±3.0μrad ±4.0μrad Chrome plate material (Photomask blank plate) Material SodaLimeGlass、Quartz Max. Size 850mm*1400mm Normal Size 420mmx520mm,520mm*610mm,520mm*800mm,700mm*800mm, 800mm*920mm,800mm*960mm,850mm*1200mm,850mm*1400mm Thickness 2.3±0.2mm,3.0±0.2mm,4.8±0.2mm,7.8±0.2mm, 5.0±0.2mm(QZ),8.0±0.2mm(QZ),10.0±0.2mm(QZ) Film Type LowReflectanceChrome Optical Density (λ=450nm) BetweenPlates3.0±0.3InPlate±0.3 Reflectivity (λ=436nm) BetweenPlates10±5%InPlate±2% Main application areas: 1、LCD, TFT, CF, TouchPanel, OLED, PDP and other flat panel display industries 2、HDI, [...]
PAM XIAMEN offers Single crystal GaTe Substrate. Gallium(II) telluride, GaTe, is a chemical compound of gallium and tellurium. There is research interest in the structure and electronic properties of GaTe because of the possibility that it, or related compounds, may have applications in the [...]
PAM-XIAMEN offers M Plane Si-GaN Freestanding GaN Substrate Item PAM-FS-GAN M-SI Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation M plane (1-100) off angle toward A-axis 0 ±0.5° M plane (1-100) off angle toward C-axis -1 ±0.2° Conduction Type Semi-Insulating Resistivity (300K) >106 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers LiAlO2 Lithium Aluminate Crystal Substrates. Main Parameters Crystal structure M4 Unit cell constant a=5.17 A c=6.26 A Melt point（℃） 1900 Density 2.62（g/cm3） Hardness 7.5（mohs） Size 10×3，10×5，10×10，15×15，20×15，20×20， Ф15,Ф20，Ф1″，Ф2″, Ф2.6″ Thickness 0.5mm, 1.0mm Polishing Single or double side polished Crystal [...]
