PAM XIAMEN offers 50.8mm Si wafers.

Please send us email at [email protected] if you need other specs and quantity.

Item | Material | Orient. | Diam (mm) |
Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |

PAM2063 | p-type Si:B | [111] | 2″ | 500 | P/P | 0.003–0.005 | Prime, 2 Flats (2nd @ 45°), hard cst |

PAM2064 | p-type Si:B | [111] | 2″ | 280 | P/E | 0.001–0.005 | SEMI Prime, 1Flat, hard cst |

PAM2065 | p-type Si:B | [111] | 2″ | 1000 | P/E | 0.001–0.005 | SEMI Prime, 1Flat, hard cst |

PAM2066 | p-type Si:B | [111] | 2″ | 1000 | P/E | 0.001–0.005 | SEMI Prime, 1Flat, hard cst |

PAM2067 | p-type Si:B | [111] ±0.5° | 2″ | 500 | P/P | <0.01 | SEMI Prime, 1Flat, hard cst |

PAM2068 | p-type Si:B | [111] ±0.5° | 2″ | 500 | P/P | <0.01 {0.00087–0.00100} | SEMI Prime, 1Flat, hard cst |

PAM2069 | p-type Si:Ga | Poly. | 2″ | C/C | 0.024–0.036 | Gallium doped Concentrate (each with measured Gallium content) | |

PAM2070 | n-type Si:P | [110] | 2″ | 280 | P/E | 19–33 | SEMI Prime, 1 Flat @ [1,–1,0], in hard cst |

PAM2071 | n-type Si:P | [110] | 2″ | 280 | P/E | 19–33 | SEMI Prime, 2Flats, hard cst |

PAM2072 | n-type Si:P | [110] ±0.5° | 2″ | 300 | BROKEN | 1–10 | Broken P/E wafers, Primary Flat @ [111]±1.0°, Secondary @ [111] 70.5° CW from Primary |

PAM2073 | n-type Si:Sb | [110] | 2″ | 375 | P/E | 0.005–0.020 | SEMI, 1Flat, hard cst |

PAM2074 | n-type Si:Sb | [110] | 2″ | 375 | P/E | 0.005–0.020 | SEMI, 1Flat, hard cst |

PAM2075 | n-type Si:P | [100] | 2″ | 400 | P/P | 210–880 | SEMI Prime, 2Flats, hard cst |

PAM2076 | n-type Si:P | [100] | 50mm | 280 | P/E | 130–280 | SEMI Prime, 2Flats, hard cst |

PAM2077 | n-type Si:P | [100] | 2″ | 275 | P/P | 40–100 | SEMI Prime, 2Flats, hard cst |

PAM2078 | n-type Si:P | [100] | 2″ | 300 | P/P | 33–48 | SEMI TEST — Some wafers have scratches, 2Flats, hard cst |

PAM2079 | n-type Si:P | [100] | 2″ | 300 | P/P | 10–30 | SEMI Prime, 1Flat, hard cst |

PAM2080 | n-type Si:P | [100] | 2″ | 300 | P/P | 10–30 | SEMI Prime, 1Flat, hard cst |

PAM2081 | n-type Si:P | [100] | 2″ | 300 | P/P | 10–30 | SEMI Prime, 1Flat, hard cst |

PAM2082 | n-type Si:P | [100] | 2″ | 300 | P/P | 10–30 | SEMI, 1Flat, hard cst |

PAM2083 | n-type Si:P | [100] | 2″ | 500 | P/P | 5–10 | SEMI Prime, 2Flats, hard cst |

PAM2084 | n-type Si:P | [100] | 2″ | 280 | P/E | 3–9 | SEMI Prime, 1Flat, hard cst |

PAM2085 | n-type Si:P | [100] | 2″ | 200±30µm | P/P | 1.25–2.50 | SEMI Prime, 1Flat, hard cst |

PAM2086 | n-type Si:P | [100] | 2″ | 280 | P/P | 1.25–2.50 | SEMI Prime, 1Flat, hard cst |

PAM2087 | n-type Si:P | [100] | 2″ | 350 | P/P | 1–50 | Test, Polished but dirty and scratched. Can be re–polished for additional fee, NO Flats, hard cst |

PAM2088 | n-type Si:P | [100] ±1° | 2″ | 400 ±15 | P/P | 1–10 | SEMI Prime, 1Flat, TTV<3μm, Empak cst |

PAM2089 | n-type Si:P | [100] | 2″ | 3000 | P/E | 1–50 | SEMI, 1Flat, Individual cst |

PAM2090 | n-type Si:P | [100] ±1.0° | 2″ | 6000 | P/E | 1–10 | SEMI Prime, 2Flats, Individual cst |

PAM2091 | n-type Si:P | [100] | 2″ | 300 | P/P | 0.8–1.0 | SEMI Prime, 2Flats, hard cst |

PAM2092 | n-type Si:Sb | [100] | 2″ | 300 | P/E | 0.01–0.02 | SEMI Prime, 2Flats, hard cst |

PAM2093 | n-type Si:Sb | [100] | 2″ | 500 | P/P | 0.01–0.02 | SEMI Prime, 2Flats, in hard cassettes of 5 wafers |

PAM2094 | n-type Si:As | [100] | 2″ | 7050 | P/E | 0.0031–0.0038 | SEMI Prime, 2Flats, Individual cst Group of 2 wafers |

PAM2095 | n-type Si:As | [100] | 2″ | 300 | P/P | 0.001–0.005 | SEMI Prime, 2Flats, hard cst |

PAM2096 | n-type Si:As | [100] | 2″ | 300 | P/P | 0.001–0.005 | SEMI Prime, 2Flats, hard cst |

PAM2097 | n-type Si:As | [100] | 2″ | 300 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, hard cst |

PAM2098 | n-type Si:As | [100] | 2″ | 420 ±15 | P/P | 0.001–0.005 {0.0030–0.0034} | SEMI Prime, 2Flats, in Empak Cassettes of 3 & 5 wafers |

PAM2099 | n-type Si:P | [111] | 2″ | 400 | L/L | 120–170 | Lapped & edged |

PAM2100 | n-type Si:P | [111] ±0.5° | 2″ | 10000 | P/E | 40–49 | Prime, NO Flats, Individual cst |

PAM2101 | n-type Si:P | [111] ±0.5° | 2″ | 5000 | P/E | >20 | Prime, NO Flats, Individual cst |

PAM2102 | n-type Si:P | [111] | 2″ | 5000 | P/E | 15–20 | SEMI Prime, 1Flat, Individual cst |

PAM2103 | n-type Si:P | [111] | 2″ | 300 | P/E | 10–25 | SEMI Prime, 2Flats, hard cst |

PAM2104 | n-type Si:P | [111] ±0.5° | 2″ | 500 | P/E | 10–12 | SEMI Prime, 2Flats, hard cst |

PAM2105 | n-type Si:P | [111–3°] ±0.5° | 2″ | 600 | P/E | ~10 | SEMI Prime, 1Flat, TTV<3μm, hard cst |

PAM2106 | n-type Si:P | [111] ±0.5° | 2″ | 500 | P/P | 2.8–10.0 | SEMI Prime, hard cst |

PAM2107 | n-type Si:P | [111] | 2″ | 500 | P/E | 2.2–3.8 | SEMI Prime, 2Flats, hard cst |

PAM2108 | n-type Si:P | [111] | 2″ | 300 | P/E | 1–10 | SEMI Prime, 2Flats, hard cst, TTV<5μm |

PAM2109 | n-type Si:P | [111] | 2″ | 500 | P/E | 1–10 | SEMI Prime, 2Flats, hard cst |

PAM2110 | n-type Si:P | [111] ±0.5° | 2″ | 6000 | P/E | 1–10 | SEMI Prime, 1Flat, Individual cst |

PAM2111 | n-type Si:Sb | [111] ±0.5° | 2″ | 300 | P/E | 0.05–0.09 | SEMI Prime, 2Flats, hard cst |

PAM2112 | n-type Si:Sb | [111–3.5°] ±0.5° | 2″ | 300 | P/E | 0.05–0.09 | SEMI Prime, 2Flats, in hard cassettes of 5 & 8 wafers |

PAM2113 | n-type Si:Sb | [111] | 2″ | 2900 | P/P | 0.013–0.015 | Prime, NO Flats, Individual cst |

PAM2114 | n-type Si:Sb | [111–2.5°] ±0.5° | 2″ | 280 | P/E | 0.012–0.017 | SEMI, 2Flats, hard cst |

PAM2115 | n-type Si:As | [111] ±0.5° | 2″ | 279 | P/E | 0.001–0.005 | SEMI Prime, 1Flat, hard cst |

PAM2116 | Intrinsic Si:- | [100] | 2″ | 200 | P/P | >10,000 | SEMI Prime, 1Flat, hard cst |

PAM2117 | p-type Si:B | [100] | 2″ | 300 | OxP/EOx | 5–10 | SEMI Prime, 1Flat, hard cst, Both sides with 24,000 A oxide |

PAM2118 | n-type Si:P | [111] | 2″ | 300 | P/E | NTDFZ 7–8 | SEMI Prime, 2Flats, hard cst |

PAM2119 | p-type Si:B | [110] | 2″ | 300 | P/E | FZ 800–2,000 | 1 F @ <1,–1,0> |

PAM2120 | p-type Si:B | [110] | 2″ | 350 | P/P | FZ 200–300 | 1 F @ <1,–1,0> |

send us email at [email protected] and [email protected]

For more information, please visit our website: https://www.powerwaywafer.com,

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.